| Statistics of electrical breakdown field in HfO2 and SiO2 films from millimeter to nanometer length scales C Sire, S Blonkowski, MJ Gordon, T Baron Applied Physics Letters 91 (24), 2007 | 143 | 2007 |
| Investigation and modeling of the electrical properties of metal–oxide–metal structures formed from chemical vapor deposited films S Blonkowski, M Regache, A Halimaoui Journal of Applied Physics 90 (3), 1501-1508, 2001 | 125 | 2001 |
| Electrical characterisation and reliability of HfO2 and Al2O3–HfO2 MIM capacitors F Mondon, S Blonkowski Microelectronics Reliability 43 (8), 1259-1266, 2003 | 80 | 2003 |
| MIM capacitance variation under electrical stress C Besset, S Bruyere, S Blonkowski, S Crémer, E Vincent Microelectronics Reliability 43 (8), 1237-1240, 2003 | 62 | 2003 |
| 28nm advanced CMOS resistive RAM solution as embedded non-volatile memory A Benoist, S Blonkowski, S Jeannot, S Denorme, J Damiens, J Berger, ... 2014 IEEE international reliability physics symposium, 2E. 6.1-2E. 6.5, 2014 | 57 | 2014 |
| Operation fundamentals in 12Mb Phase Change Memory based on innovative Ge-rich GST materials featuring high reliability performance V Sousa, G Navarro, N Castellani, M Coue, O Cueto, C Sabbione, P Noe, ... 2015 Symposium on VLSI Technology (VLSI Technology), T98-T99, 2015 | 43 | 2015 |
| Dielectrical properties of metal-insulator-metal aluminum nitride structures: Measurement and modeling N Ben Hassine, D Mercier, P Renaux, G Parat, S Basrour, P Waltz, ... Journal of Applied Physics 105 (4), 2009 | 43 | 2009 |
| Filamentary model of dielectric breakdown S Blonkowski Journal of Applied Physics 107 (8), 2010 | 41 | 2010 |
| Nonlinear capacitance variations in amorphous oxide metal-insulator-metal structures S Blonkowski Applied Physics Letters 91 (17), 2007 | 40 | 2007 |
| Metal–insulator–metal capacitors using dielectric grown by pulsed-injection plasma enhanced metalorganic chemical vapor deposition C Durand, C Vallée, V Loup, O Salicio, C Dubourdieu, S Blonkowski, ... Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 22 (3 …, 2004 | 38 | 2004 |
| Electrical properties in low temperature range (5 K–300 K) of Tantalum Oxide dielectric MIM capacitors E Deloffre, L Montès, G Ghibaudo, S Bruyère, S Blonkowski, S Bécu, ... Microelectronics Reliability 45 (5-6), 925-928, 2005 | 37 | 2005 |
| Experimental investigation of charge transfer at the semiconductor/electrolyte junction P Allongue, S Blonkowski, E Souteyrand Electrochimica acta 37 (5), 781-797, 1992 | 35 | 1992 |
| Electrical property improvements of yttrium oxide-based metal-insulator-metal capacitors C Durand, C Vallée, C Dubourdieu, M Kahn, M Derivaz, S Blonkowski, ... Journal of Vacuum Science & Technology A 24 (3), 459-466, 2006 | 32 | 2006 |
| Study of reaction coupling and interfacial kinetics at semiconductor electrodes by band edge shift measurements P Allongue, S Blonkowski, D Lincot Journal of electroanalytical chemistry and interfacial electrochemistry 300 …, 1991 | 32 | 1991 |
| Bipolar resistive switching from liquid helium to room temperature S Blonkowski, T Cabout Journal of Physics D: Applied Physics 48 (34), 345101, 2015 | 31 | 2015 |
| Frequency Effect on Voltage Linearity of-Based RF Metal–Insulator–Metal Capacitors T Bertaud, S Blonkowski, C Bermond, C Vallee, P Gonon, M Gros-Jean, ... IEEE electron device letters 31 (2), 114-116, 2009 | 29 | 2009 |
| Corrosion of III–V compounds; a comparative study of GaAs and InP: II. Reaction scheme and influence of surface properties P Allongue, S Blonkowski Journal of electroanalytical chemistry and interfacial electrochemistry 317 …, 1991 | 28 | 1991 |
| Improved electrical properties using SrTiO3/Y2O3 bilayer dielectrics for MIM capacitor applications M Kahn, C Vallée, E Defay, C Dubourdieu, M Bonvalot, S Blonkowski, ... Microelectronics Reliability 47 (4-5), 773-776, 2007 | 27 | 2007 |
| Resistive switching study in HfO2 based resistive memories by conductive atomic force microscopy in vacuum AK Singh, S Blonkowski, M Kogelschatz Journal of Applied Physics 124 (1), 2018 | 23 | 2018 |
| N-doping impact in optimized Ge-rich materials based phase-change memory G Navarro, V Sousa, P Noe, N Castellani, M Coue, J Kluge, ... 2016 IEEE 8th International Memory Workshop (IMW), 1-4, 2016 | 23 | 2016 |
