Serge Blonkowski
Serge Blonkowski
CEA Grenoble
Verified email at cea.fr
Title
Cited by
Cited by
Year
Investigation and modeling of the electrical properties of metal–oxide–metal structures formed from chemical vapor deposited films
S Blonkowski, M Regache, A Halimaoui
Journal of Applied Physics 90 (3), 1501-1508, 2001
1242001
Statistics of electrical breakdown field in and films from millimeter to nanometer length scales
C Sire, S Blonkowski, MJ Gordon, T Baron
Applied Physics Letters 91 (24), 242905, 2007
1202007
Electrical characterisation and reliability of HfO2 and Al2O3–HfO2 MIM capacitors
F Mondon, S Blonkowski
Microelectronics Reliability 43 (8), 1259-1266, 2003
742003
MIM capacitance variation under electrical stress
C Besset, S Bruyere, S Blonkowski, S Crémer, E Vincent
Microelectronics Reliability 43 (8), 1237-1240, 2003
522003
28nm advanced CMOS resistive RAM solution as embedded non-volatile memory
A Benoist, S Blonkowski, S Jeannot, S Denorme, J Damiens, J Berger, ...
2014 IEEE International Reliability Physics Symposium, 2E. 6.1-2E. 6.5, 2014
442014
Dielectrical properties of metal-insulator-metal aluminum nitride structures: Measurement and modeling
N Ben Hassine, D Mercier, P Renaux, G Parat, S Basrour, P Waltz, ...
Journal of Applied Physics 105 (4), 044111, 2009
382009
Nonlinear capacitance variations in amorphous oxide metal-insulator-metal structures
S Blonkowski
Applied Physics Letters 91 (17), 172903, 2007
372007
Metal–insulator–metal capacitors using dielectric grown by pulsed-injection plasma enhanced metalorganic chemical vapor deposition
C Durand, C Vallée, V Loup, O Salicio, C Dubourdieu, S Blonkowski, ...
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 22 (3 …, 2004
372004
Filamentary model of dielectric breakdown
S Blonkowski
Journal of Applied Physics 107 (8), 084109, 2010
362010
Electrical properties in low temperature range (5 K–300 K) of Tantalum Oxide dielectric MIM capacitors
E Deloffre, L Montès, G Ghibaudo, S Bruyère, S Blonkowski, S Bécu, ...
Microelectronics Reliability 45 (5-6), 925-928, 2005
352005
Experimental investigation of charge transfer at the semiconductor/electrolyte junction
P Allongue, S Blonkowski, E Souteyrand
Electrochimica acta 37 (5), 781-797, 1992
331992
Study of reaction coupling and interfacial kinetics at semiconductor electrodes by band edge shift measurements
P Allongue, S Blonkowski, D Lincot
Journal of electroanalytical chemistry and interfacial electrochemistry 300 …, 1991
321991
Electrical property improvements of yttrium oxide-based metal-insulator-metal capacitors
C Durand, C Vallée, C Dubourdieu, M Kahn, M Derivaz, S Blonkowski, ...
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 24 (3 …, 2006
302006
Operation fundamentals in 12Mb Phase Change Memory based on innovative Ge-rich GST materials featuring high reliability performance
V Sousa, G Navarro, N Castellani, M Coue, O Cueto, C Sabbione, P Noe, ...
2015 Symposium on VLSI Technology (VLSI Technology), T98-T99, 2015
252015
Improved electrical properties using SrTiO3/Y2O3 bilayer dielectrics for MIM capacitor applications
M Kahn, C Vallée, E Defay, C Dubourdieu, M Bonvalot, S Blonkowski, ...
Microelectronics Reliability 47 (4-5), 773-776, 2007
252007
Corrosion of III–V compounds; a comparative study of GaAs and InP: II. Reaction scheme and influence of surface properties
P Allongue, S Blonkowski
Journal of electroanalytical chemistry and interfacial electrochemistry 317 …, 1991
251991
Bipolar resistive switching from liquid helium to room temperature
S Blonkowski, T Cabout
Journal of Physics D: Applied Physics 48 (34), 345101, 2015
242015
Frequency Effect on Voltage Linearity of-Based RF Metal–Insulator–Metal Capacitors
T Bertaud, S Blonkowski, C Bermond, C Vallee, P Gonon, M Gros-Jean, ...
IEEE electron device letters 31 (2), 114-116, 2009
242009
Corrosion of III-V compounds; a comparative study of GaAs and InP: Part I. Electrochemical characterization based on Tafel plot measurements
P Allongue, S Blonkowski
Journal of electroanalytical chemistry and interfacial electrochemistry 316 …, 1991
211991
Wideband frequency and in situ characterization of ultra thin ZrO2 and HfO2 films for integrated MIM capacitors
T Bertaud, C Bermond, T Lacrevaz, C Vallée, Y Morand, B Fléchet, ...
Microelectronic Engineering 87 (3), 301-305, 2010
172010
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