Serge Blonkowski
Serge Blonkowski
CEA Grenoble
Verified email at
Cited by
Cited by
Investigation and modeling of the electrical properties of metal–oxide–metal structures formed from chemical vapor deposited films
S Blonkowski, M Regache, A Halimaoui
Journal of Applied Physics 90 (3), 1501-1508, 2001
Statistics of electrical breakdown field in and films from millimeter to nanometer length scales
C Sire, S Blonkowski, MJ Gordon, T Baron
Applied Physics Letters 91 (24), 242905, 2007
Electrical characterisation and reliability of HfO2 and Al2O3–HfO2 MIM capacitors
F Mondon, S Blonkowski
Microelectronics Reliability 43 (8), 1259-1266, 2003
MIM capacitance variation under electrical stress
C Besset, S Bruyere, S Blonkowski, S Crémer, E Vincent
Microelectronics Reliability 43 (8), 1237-1240, 2003
28nm advanced CMOS resistive RAM solution as embedded non-volatile memory
A Benoist, S Blonkowski, S Jeannot, S Denorme, J Damiens, J Berger, ...
2014 IEEE International Reliability Physics Symposium, 2E. 6.1-2E. 6.5, 2014
Dielectrical properties of metal-insulator-metal aluminum nitride structures: Measurement and modeling
N Ben Hassine, D Mercier, P Renaux, G Parat, S Basrour, P Waltz, ...
Journal of Applied Physics 105 (4), 044111, 2009
Nonlinear capacitance variations in amorphous oxide metal-insulator-metal structures
S Blonkowski
Applied Physics Letters 91 (17), 172903, 2007
Metal–insulator–metal capacitors using dielectric grown by pulsed-injection plasma enhanced metalorganic chemical vapor deposition
C Durand, C Vallée, V Loup, O Salicio, C Dubourdieu, S Blonkowski, ...
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 22 (3 …, 2004
Filamentary model of dielectric breakdown
S Blonkowski
Journal of Applied Physics 107 (8), 084109, 2010
Electrical properties in low temperature range (5 K–300 K) of Tantalum Oxide dielectric MIM capacitors
E Deloffre, L Montès, G Ghibaudo, S Bruyère, S Blonkowski, S Bécu, ...
Microelectronics Reliability 45 (5-6), 925-928, 2005
Experimental investigation of charge transfer at the semiconductor/electrolyte junction
P Allongue, S Blonkowski, E Souteyrand
Electrochimica acta 37 (5), 781-797, 1992
Study of reaction coupling and interfacial kinetics at semiconductor electrodes by band edge shift measurements
P Allongue, S Blonkowski, D Lincot
Journal of electroanalytical chemistry and interfacial electrochemistry 300 …, 1991
Electrical property improvements of yttrium oxide-based metal-insulator-metal capacitors
C Durand, C Vallée, C Dubourdieu, M Kahn, M Derivaz, S Blonkowski, ...
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 24 (3 …, 2006
Operation fundamentals in 12Mb Phase Change Memory based on innovative Ge-rich GST materials featuring high reliability performance
V Sousa, G Navarro, N Castellani, M Coue, O Cueto, C Sabbione, P Noe, ...
2015 Symposium on VLSI Technology (VLSI Technology), T98-T99, 2015
Improved electrical properties using SrTiO3/Y2O3 bilayer dielectrics for MIM capacitor applications
M Kahn, C Vallée, E Defay, C Dubourdieu, M Bonvalot, S Blonkowski, ...
Microelectronics Reliability 47 (4-5), 773-776, 2007
Corrosion of III–V compounds; a comparative study of GaAs and InP: II. Reaction scheme and influence of surface properties
P Allongue, S Blonkowski
Journal of electroanalytical chemistry and interfacial electrochemistry 317 …, 1991
Bipolar resistive switching from liquid helium to room temperature
S Blonkowski, T Cabout
Journal of Physics D: Applied Physics 48 (34), 345101, 2015
Frequency Effect on Voltage Linearity of-Based RF Metal–Insulator–Metal Capacitors
T Bertaud, S Blonkowski, C Bermond, C Vallee, P Gonon, M Gros-Jean, ...
IEEE electron device letters 31 (2), 114-116, 2009
Corrosion of III-V compounds; a comparative study of GaAs and InP: Part I. Electrochemical characterization based on Tafel plot measurements
P Allongue, S Blonkowski
Journal of electroanalytical chemistry and interfacial electrochemistry 316 …, 1991
Wideband frequency and in situ characterization of ultra thin ZrO2 and HfO2 films for integrated MIM capacitors
T Bertaud, C Bermond, T Lacrevaz, C Vallée, Y Morand, B Fléchet, ...
Microelectronic Engineering 87 (3), 301-305, 2010
The system can't perform the operation now. Try again later.
Articles 1–20