Recent issues in negative-bias temperature instability: Initial degradation, field dependence of interface trap generation, hole trapping effects, and relaxation AE Islam, H Kufluoglu, D Varghese, S Mahapatra, MA Alam
IEEE Transactions on Electron Devices 54 (9), 2143-2154, 2007
391 * 2007 A comprehensive model for PMOS NBTI degradation: Recent progress MA Alam, H Kufluoglu, D Varghese, S Mahapatra
Microelectronics Reliability 47 (6), 853-862, 2007
381 2007 Impact of NBTI on the temporal performance degradation of digital circuits BC Paul, K Kang, H Kufluoglu, MA Alam, K Roy
IEEE Electron Device Letters 26 (8), 560-562, 2005
367 2005 Temporal performance degradation under NBTI: Estimation and design for improved reliability of nanoscale circuits BC Paul, K Kang, H Kufluoglu, MA Alam, K Roy
Proceedings of the Design Automation & Test in Europe Conference 1, 1-6, 2006
206 2006 Impact of negative-bias temperature instability in nanoscale SRAM array: Modeling and analysis K Kang, H Kufluoglu, K Roy, MA Alam
IEEE Transactions on Computer-Aided Design of Integrated Circuits and …, 2007
197 2007 Theory of interface-trap-induced NBTI degradation for reduced cross section MOSFETs H Kufluoglu, MA Alam
IEEE transactions on electron devices 53 (5), 1120-1130, 2006
118 2006 A geometrical unification of the theories of NBTI and HCI time-exponents and its implications for ultra-scaled planar and surround-gate MOSFETs H Kufluoglu, MA Alam
IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004 …, 2004
116 2004 A Generalized Reaction–Diffusion Model With Explicit H– Dynamics for Negative-Bias Temperature-Instability (NBTI) Degradation H Kufluoglu, MA Alam
IEEE Transactions on Electron Devices 54 (5), 1101-1107, 2007
106 2007 Negative bias temperature instability: Estimation and design for improved reliability of nanoscale circuits BC Paul, K Kang, H Kufluoglu, MA Alam, K Roy
IEEE Transactions on Computer-Aided Design of Integrated Circuits and …, 2007
101 2007 Efficient transistor-level sizing technique under temporal performance degradation due to NBTI K Kang, H Kufluoglu, MA Alam, K Roy
2006 International Conference on Computer Design, 216-221, 2006
84 2006 off -State Degradation in Drain-Extended NMOS Transistors: Interface Damage and Correlation to Dielectric BreakdownD Varghese, H Kufluoglu, V Reddy, H Shichijo, D Mosher, S Krishnan, ...
IEEE Transactions on Electron Devices 54 (10), 2669-2678, 2007
81 2007 A computational model of NBTI and hot carrier injection time-exponents for MOSFET reliability H Kufluoglu, MA Alam
Journal of Computational Electronics 3, 165-169, 2004
64 2004 Critical analysis of short-term negative bias temperature instability measurements: Explaining the effect of time-zero delay for on-the-fly measurements AE Islam, H Kufluoglu, D Varghese, MA Alam
Applied Physics Letters 90 (8), 2007
43 2007 MOSFET degradation due to negative bias temperature instability (NBTI) and hot carrier injection (HCI), and its implications for reliability-aware VLSI design H Kufluoglu
Purdue University, 2007
39 2007 An extensive and improved circuit simulation methodology for NBTI recovery H Kufluoglu, V Reddy, A Marshall, J Krick, T Ragheb, C Cirba, A Krishnan, ...
2010 IEEE International Reliability Physics Symposium, 670-675, 2010
30 2010 Universality of off-state degradation in drain extended NMOS transistors D Varghese, H Kufluoglu, V Reddy, H Shichijo, S Krishnan, MA Alam
2006 International Electron Devices Meeting, 1-4, 2006
26 2006 On quasi-saturation of negative bias temperature degradation MA Alam, H Kufluoglu
ECS Trans 1 (1), 139-145, 2005
20 2005 Aging sensors for workload centric guardbanding in dynamic voltage scaling applications M Chen, H Kufluoglu, J Carulli, V Reddy
2013 IEEE International Reliability Physics Symposium (IRPS), 4A. 2.1-4A. 2.5, 2013
16 2013 Temperature dependence of the negative bias temperature instability in the framework of dispersive transport A Islam, H Kufluoglu, D Varghese, M Alam
Appl. Phys. Lett 90 (1), 083505-1, 2007
15 2007 An analysis of the benefits of NBTI recovery under circuit operating conditions H Kufluoglu, C Chancellor, M Chen, V Reddy
2012 IEEE International Reliability Physics Symposium (IRPS), 2F. 3.1-2F. 3.6, 2012
13 2012