| Simple analytical method for calculating exciton binding energies in semiconductor quantum wells H Mathieu, P Lefebvre, P Christol Physical Review B 46 (7), 4092, 1992 | 393 | 1992 |
| MBE growth and characterization of type-II InAs/GaSb superlattices for mid-infrared detection JB Rodriguez, P Christol, L Cerutti, F Chevrier, A Joullié Journal of Crystal Growth 274 (1-2), 6-13, 2005 | 150 | 2005 |
| Thermalisation rate study of GaSb-based heterostructures by continuous wave photoluminescence and their potential as hot carrier solar cell absorbers A Le Bris, L Lombez, S Laribi, G Boissier, P Christol, JF Guillemoles Energy & Environmental Science 5 (3), 6225-6232, 2012 | 122 | 2012 |
| GaSb-based mid-infrared 2–5 μm laser diodes A Joullié, P Christol Comptes Rendus Physique 4 (6), 621-637, 2003 | 122 | 2003 |
| Fractional‐dimensional calculation of exciton binding energies in semiconductor quantum wells and quantum‐well wires P Christol, P Lefebvre, H Mathieu Journal of applied physics 74 (9), 5626-5637, 1993 | 107 | 1993 |
| Unified formulation of excitonic absorption spectra of semiconductor quantum wells, superlattices, and quantum wires P Lefebvre, P Christol, H Mathieu Physical Review B 48 (23), 17308, 1993 | 102 | 1993 |
| Wet etching and chemical polishing of InAs/GaSb superlattice photodiodes R Chaghi, C Cervera, H Aït-Kaci, P Grech, JB Rodriguez, P Christol Semiconductor Science and Technology 24 (6), 065010, 2009 | 101 | 2009 |
| Unambiguous determination of carrier concentration and mobility for InAs/GaSb superlattice photodiode optimization C Cervera, JB Rodriguez, JP Perez, H Aït-Kaci, R Chaghi, L Konczewicz, ... Journal of Applied Physics 106 (3), 2009 | 78 | 2009 |
| Excitons in semiconductor quantum wells: A straightforward analytical calculation H Mathieu, P Lefebvre, P Christol Journal of applied physics 72 (1), 300-302, 1992 | 72 | 1992 |
| Midwave infrared InSb nBn photodetector A Evirgen, J Abautret, JP Perez, A Cordat, A Nedelcu, P Christol Electronics Letters 50 (20), 1472-1473, 2014 | 70 | 2014 |
| Interface analysis of InAs/GaSb superlattice grown by MBE B Satpati, JB Rodriguez, A Trampert, E Tournié, A Joullié, P Christol Journal of Crystal Growth 301, 889-892, 2007 | 69 | 2007 |
| Confined excitons in semiconductors: Correlation between binding energy and spectral absorption shape P Lefebvre, P Christol, H Mathieu, S Glutsch Physical Review B 52 (8), 5756, 1995 | 67 | 1995 |
| Characterization of midwave infrared InAs/GaSb superlattice photodiode C Cervera, JB Rodriguez, R Chaghi, H Aït-Kaci, P Christol Journal of Applied Physics 106 (2), 2009 | 66 | 2009 |
| Excitons in semiconductor superlattices: Heuristic description of the transfer between Wannier-like and Frenkel-like regimes P Lefebvre, P Christol, H Mathieu Physical Review B 46 (20), 13603, 1992 | 56 | 1992 |
| Influence of the period thickness and composition on the electro-optical properties of type-II InAs/GaSb midwave infrared superlattice photodetectors R Taalat, JB Rodriguez, M Delmas, P Christol Journal of Physics D: Applied Physics 47 (1), 015101, 2013 | 54 | 2013 |
| Optical characterization of symmetric InAs/GaSb superlattices for detection in the 3–5 μm spectral region JB Rodriguez, P Christol, F Chevrier, A Joullié Physica E: Low-dimensional Systems and Nanostructures 28 (2), 128-133, 2005 | 53 | 2005 |
| Dark current and noise measurements of an InAs/GaSb superlattice photodiode operating in the midwave infrared domain C Cervera, I Ribet-Mohamed, R Taalat, JP Perez, P Christol, ... Journal of electronic materials 41, 2714-2718, 2012 | 50 | 2012 |
| A type-II superlattice period with a modified InAs to GaSb thickness ratio for midwavelength infrared photodiode performance improvement JB Rodriguez, C Cervera, P Christol Applied Physics Letters 97 (25), 2010 | 49 | 2010 |
| Type-II InAsSb/InAs strained quantum-well laser diodes emitting at 3.5 μm A Wilk, M El Gazouli, M El Skouri, P Christol, P Grech, AN Baranov, ... Applied Physics Letters 77 (15), 2298-2300, 2000 | 47 | 2000 |
| Characterization of midwave infrared InSb avalanche photodiode J Abautret, JP Perez, A Evirgen, J Rothman, A Cordat, P Christol Journal of Applied Physics 117 (24), 2015 | 46 | 2015 |
Jean-Baptiste RodriguezCNRS - Université MontpellierAdresse e-mail validée de cnrs.fr
