Kyounghwan Kim
Kyounghwan Kim
Apple
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Evidence for moiré excitons in van der Waals heterostructures
K Tran, G Moody, F Wu, X Lu, J Choi, K Kim, A Rai, DA Sanchez, J Quan, ...
Nature 567 (7746), 71-75, 2019
3622019
van der Waals heterostructures with high accuracy rotational alignment
K Kim, M Yankowitz, B Fallahazad, S Kang, HCP Movva, S Huang, ...
Nano letters 16 (3), 1989-1995, 2016
2572016
Tunable moiré bands and strong correlations in small-twist-angle bilayer graphene
K Kim, A DaSilva, S Huang, B Fallahazad, S Larentis, T Taniguchi, ...
Proceedings of the National Academy of Sciences 114 (13), 3364-3369, 2017
2542017
High-Mobility Holes in Dual-Gated WSe2 Field-Effect Transistors
HCP Movva, A Rai, S Kang, K Kim, B Fallahazad, T Taniguchi, ...
ACS nano 9 (10), 10402-10410, 2015
1762015
Gate-tunable resonant tunneling in double bilayer graphene heterostructures
B Fallahazad, K Lee, S Kang, J Xue, S Larentis, C Corbet, K Kim, ...
Nano letters 15 (1), 428-433, 2015
1432015
Structural and Electrical Properties of MoTe2 and MoSe2 Grown by Molecular Beam Epitaxy
A Roy, HCP Movva, B Satpati, K Kim, R Dey, A Rai, T Pramanik, ...
ACS applied materials & interfaces 8 (11), 7396-7402, 2016
1332016
Chemical potential and quantum Hall ferromagnetism in bilayer graphene
K Lee, B Fallahazad, J Xue, DC Dillen, K Kim, T Taniguchi, K Watanabe, ...
Science 345 (6192), 58-61, 2014
1312014
Band Offset and Negative Compressibility in Graphene-MoS2 Heterostructures
S Larentis, JR Tolsma, B Fallahazad, DC Dillen, K Kim, AH MacDonald, ...
Nano letters 14 (4), 2039-2045, 2014
1312014
Shubnikov–de Haas Oscillations of High-Mobility Holes in Monolayer and Bilayer : Landau Level Degeneracy, Effective Mass, and Negative Compressibility
B Fallahazad, HCP Movva, K Kim, S Larentis, T Taniguchi, K Watanabe, ...
Physical review letters 116 (8), 086601, 2016
1232016
Topologically protected helical states in minimally twisted bilayer graphene
S Huang, K Kim, DK Efimkin, T Lovorn, T Taniguchi, K Watanabe, ...
Physical review letters 121 (3), 037702, 2018
1182018
Band Alignment in WSe2–Graphene Heterostructures
K Kim, S Larentis, B Fallahazad, K Lee, J Xue, DC Dillen, CM Corbet, ...
ACS nano 9 (4), 4527-4532, 2015
1082015
Radial modulation doping in core–shell nanowires
DC Dillen, K Kim, ES Liu, E Tutuc
Nature nanotechnology 9 (2), 116, 2014
822014
Strongly Enhanced Tunneling at Total Charge Neutrality in Double-Bilayer Graphene- Heterostructures
GW Burg, N Prasad, K Kim, T Taniguchi, K Watanabe, AH MacDonald, ...
Physical review letters 120 (17), 177702, 2018
632018
Reconfigurable Complementary Monolayer MoTe2 Field-Effect Transistors for Integrated Circuits
S Larentis, B Fallahazad, HCP Movva, K Kim, A Rai, T Taniguchi, ...
ACS nano 11 (5), 4832-4839, 2017
622017
Density-Dependent Quantum Hall States and Zeeman Splitting in Monolayer and Bilayer
HCP Movva, B Fallahazad, K Kim, S Larentis, T Taniguchi, K Watanabe, ...
Physical review letters 118 (24), 247701, 2017
612017
Bilayer graphene-hexagonal boron nitride heterostructure negative differential resistance interlayer tunnel FET
S Kang, B Fallahazad, K Lee, H Movva, K Kim, CM Corbet, T Taniguchi, ...
IEEE Electron Device Letters 36 (4), 405-407, 2015
572015
Large effective mass and interaction-enhanced Zeeman splitting of -valley electrons in
S Larentis, HCP Movva, B Fallahazad, K Kim, A Behroozi, T Taniguchi, ...
Physical Review B 97 (20), 201407, 2018
442018
Intrinsic disorder in graphene on transition metal dichalcogenide heterostructures
M Yankowitz, S Larentis, K Kim, J Xue, D McKenzie, S Huang, M Paggen, ...
Nano letters 15 (3), 1925-1929, 2015
412015
Coherent Interlayer Tunneling and Negative Differential Resistance with High Current Density in Double Bilayer Graphene–WSe2 Heterostructures
GW Burg, N Prasad, B Fallahazad, A Valsaraj, K Kim, T Taniguchi, ...
Nano letters 17 (6), 3919-3925, 2017
342017
Effects of electrode layer band structure on the performance of multilayer graphene–hBN–graphene interlayer tunnel field effect transistors
S Kang, N Prasad, HCP Movva, A Rai, K Kim, X Mou, T Taniguchi, ...
Nano letters 16 (8), 4975-4981, 2016
272016
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