H Hoe Tan
TitreCitée parAnnée
Phase perfection in zinc blende and wurtzite III− V nanowires using basic growth parameters
HJ Joyce, J Wong-Leung, Q Gao, HH Tan, C Jagadish
Nano letters 10 (3), 908-915, 2010
4572010
Optically pumped room-temperature GaAs nanowire lasers
D Saxena, S Mokkapati, P Parkinson, N Jiang, Q Gao, HH Tan, ...
Nature Photonics 7 (12), 963, 2013
3962013
Twin-free uniform epitaxial GaAs nanowires grown by a two-temperature process
HJ Joyce, Q Gao, HH Tan, C Jagadish, Y Kim, X Zhang, Y Guo, J Zou
Nano letters 7 (4), 921-926, 2007
3272007
Carrier lifetime and mobility enhancement in nearly defect-free core− shell nanowires measured using time-resolved terahertz spectroscopy
P Parkinson, HJ Joyce, Q Gao, HH Tan, X Zhang, J Zou, C Jagadish, ...
Nano letters 9 (9), 3349-3353, 2009
2622009
III–V semiconductor nanowires for optoelectronic device applications
HJ Joyce, Q Gao, HH Tan, C Jagadish, Y Kim, J Zou, LM Smith, ...
Progress in Quantum Electronics 35 (2-3), 23-75, 2011
2502011
Influence of nanowire density on the shape and optical properties of ternary InGaAs nanowires
Y Kim, HJ Joyce, Q Gao, HH Tan, C Jagadish, M Paladugu, J Zou, ...
Nano letters 6 (4), 599-604, 2006
2382006
Polarization and temperature dependence of photoluminescence from zincblende and wurtzite InP nanowires
A Mishra, LV Titova, TB Hoang, HE Jackson, LM Smith, JM Yarrison-Rice, ...
Applied Physics Letters 91 (26), 263104, 2007
2242007
Transient terahertz conductivity of GaAs nanowires
P Parkinson, J Lloyd-Hughes, Q Gao, HH Tan, C Jagadish, MB Johnston, ...
Nano Letters 7 (7), 2162-2165, 2007
2152007
Electronic properties of GaAs, InAs and InP nanowires studied by terahertz spectroscopy
HJ Joyce, CJ Docherty, Q Gao, HH Tan, C Jagadish, J Lloyd-Hughes, ...
Nanotechnology 24 (21), 214006, 2013
2102013
Temperature dependence of photoluminescence from single core-shell GaAs–AlGaAs nanowires
LV Titova, TB Hoang, HE Jackson, LM Smith, JM Yarrison-Rice, Y Kim, ...
Applied Physics Letters 89 (17), 173126, 2006
2042006
Carrier dynamics and quantum confinement in type II ZB-WZ InP nanowire homostructures
K Pemasiri, M Montazeri, R Gass, LM Smith, HE Jackson, J Yarrison-Rice, ...
Nano letters 9 (2), 648-654, 2009
1942009
Unexpected benefits of rapid growth rate for III− V nanowires
HJ Joyce, Q Gao, HH Tan, C Jagadish, Y Kim, MA Fickenscher, S Perera, ...
Nano letters 9 (2), 695-701, 2008
1562008
Nonlinear generation of vector beams from AlGaAs nanoantennas
R Camacho-Morales, M Rahmani, S Kruk, L Wang, L Xu, DA Smirnova, ...
Nano letters 16 (11), 7191-7197, 2016
1462016
Selective-area epitaxy of pure wurtzite InP nanowires: high quantum efficiency and room-temperature lasing
Q Gao, D Saxena, F Wang, L Fu, S Mokkapati, Y Guo, L Li, J Wong-Leung, ...
Nano letters 14 (9), 5206-5211, 2014
1462014
Growth mechanism of truncated triangular III–V nanowires
J Zou, M Paladugu, H Wang, GJ Auchterlonie, YN Guo, Y Kim, Q Gao, ...
Small 3 (3), 389-393, 2007
1352007
Ultralow surface recombination velocity in InP nanowires probed by terahertz spectroscopy
HJ Joyce, J Wong-Leung, CK Yong, CJ Docherty, S Paiman, Q Gao, ...
Nano letters 12 (10), 5325-5330, 2012
1342012
Multipulse operation of a Ti: sapphire laser mode locked by an ion-implanted semiconductor saturable-absorber mirror
MJ Lederer, B Luther-Davies, HH Tan, C Jagadish, NN Akhmediev, ...
JOSA B 16 (6), 895-904, 1999
1281999
Electrical and structural analysis of high-dose Si implantation in GaN
JC Zolper, HH Tan, JS Williams, J Zou, DJH Cockayne, SJ Pearton, ...
Applied physics letters 70 (20), 2729-2731, 1997
1231997
Nearly intrinsic exciton lifetimes in single twin-free core-shell nanowire heterostructures
S Perera, MA Fickenscher, HE Jackson, LM Smith, JM Yarrison-Rice, ...
Applied Physics Letters 93 (5), 053110, 2008
1222008
Polarization-sensitive terahertz detection by multicontact photoconductive receivers
E Castro-Camus, J Lloyd-Hughes, MB Johnston, MD Fraser, HH Tan, ...
Applied Physics Letters 86 (25), 254102, 2005
1212005
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