Modeling and analysis of double channel GaN HEMTs using a physics-based analytical model RR Malik, MA Mir, Z Bhat, A Pampori, YS Chauhan, SA Ahsan
IEEE Journal of the Electron Devices Society 9, 789-797, 2021
5 2021 Impact of Channel Electric Field Profile Evolution on Nanosecond Timescale Cyclic Stress-Induced Dynamic R ON Behavior in AlGaN/GaN HEMTs—Part II RR Chaudhuri, A Gupta, V Joshi, RR Malik, SD Gupta, M Shrivastava
IEEE Transactions on Electron Devices 70 (12), 6183-6189, 2023
3 2023 Dynamic Interplay of Surface and Buffer Traps in Determining Drain Current Injection induced Device Instability in OFF-state of AlGaN/GaN HEMTs MA Mir, V Joshi, RR Chaudhuri, MA Munshi, RR Malik, M Shrivastava
2023 IEEE International Reliability Physics Symposium (IRPS), 1-6, 2023
3 2023 Signatures of positive gate over-drive induced hole trap generation and its impact on p-GaN gate stack instability in AlGaN/GaN HEMTs RR Malik, V Joshi, RR Chaudhuri, MA Mir, Z Khan, AN Shaji, ...
2023 IEEE International Reliability Physics Symposium (IRPS), 1-4, 2023
2 2023 Physical Insights Into the Lattice Temperature Dependent Evolution of Hot Electron Distribution in GaN HEMTs on C-Doped GaN-on-Si RR Chaudhuri, V Joshi, RR Malik, M Shrivastava
IEEE Transactions on Electron Devices, 2023
1 2023 Unique lattice temperature dependent evolution of hot electron distribution in GaN HEMTs on C-doped GaN buffer and its reliability consequences RR Chaudhuri, V Joshi, A Gupta, T Joshi, RR Malik, MA Mir, SD Gupta, ...
2023 IEEE International Reliability Physics Symposium (IRPS), 1-5, 2023
1 2023 On The Role of Stress Engineering of Surface Passivation in Determining the Device Performance of AlGaN/GaN HEMTs MA Mir, A Thakare, MA Munshi, V Avinash, S Wani, Z Khan, R Chaudhuri, ...
2024 IEEE International Reliability Physics Symposium (IRPS), 1-5, 2024
2024 Experimental Insights into the Role of Inter-valley and Defect Transitions of Hot Electrons in Determining Self-heating in AlGaN/GaN HEMTs RR Chaudhuri, V Joshi, SS Wani, SR Karthik, RR Malik, M Shrivastava
2024 IEEE International Reliability Physics Symposium (IRPS), 1-6, 2024
2024 Physical Insights Into Nano-Second Time Scale Cyclic Stress Induced Dynamic RR Chaudhuri, A Gupta, V Joshi, RR Malik, SD Gupta, M Shrivastava
IEEE Transactions on Electron Devices, 2023
2023 Reverse Bias Stress-Induced Turn-On Voltage Shift in Recessed AlGaN/GaN Schottky Barrier Diodes RR Malik, V Joshi, RR Chaudhuri, SD Gupta, M Shrivastava
IEEE Transactions on Electron Devices, 2023
2023 Understanding Temperature Dependence of ESD Reliability in AlGaN/GaN HEMTs MA Munshi, MA Mir, R Malik, V Joshi, RR Chaudhuri, Z Khan, ...
2023 45th Annual EOS/ESD Symposium (EOS/ESD), 1-5, 2023
2023 Interplay of Surface Passivation and Electric Field in Determining ESD Behaviour of p-GaN Gated AlGaN/GaN HEMTs RR Malik, AN Shaji, Z Khan, M Bhattacharya, MA Munshi, RR Chaudhuri, ...
2023 45th Annual EOS/ESD Symposium (EOS/ESD), 1-7, 2023
2023 Impact of Channel Electric Field Profile Evolution on Nanosecond Timescale Cyclic Stress-Induced Dynamic $\textit {R} _ {\bio {ON}} $ Behavior in AlGaN/GaN HEMTs—Part II RR Chaudhuri, A Gupta, V Joshi, RR Malik, SD Gupta, M Shrivastava
IEEE Transactions on Electron Devices, 2023
2023 Physical Insights into the DC and Transient Reverse Bias Reliability of β-Ga2 O3 Based Vertical Schottky Barrier Diodes H Raj, V Joshi, RR Chaudhuri, RR Malik, M Shrivastava
2023 IEEE International Reliability Physics Symposium (IRPS), 1-4, 2023
2023 
RAJARSHI ROY CHAUDHURIDST INSPIRE PhD Fellow, Department of Electronic Systems Engg., Indian Institute of ScienceAdresse e-mail validée de iisc.ac.in
