| Fully-depleted SOI technology using high-k and single-metal gate for 32 nm node LSTP applications featuring 0.179 μm26T-SRAM bitcell C Fenouillet-Beranger, S Denorme, B Icard, F Boeuf, J Coignus, O Faynot, ... 2007 IEEE International Electron Devices Meeting, 267-270, 2007 | 84 | 2007 |
| A functional 0.69/spl mu/m/sup 2/embedded 6T-SRAM bit cell for 65 nm CMOS platform F Arnaud, F Boeuf, F Salvetti, D Lenoble, F Wacquant, C Regnier, P Morin, ... 2003 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No …, 2003 | 60 | 2003 |
| A conventional 45nm CMOS node low-cost platform for general purpose and low power applications F Boeuf, F Arnaud, MT Basso, D Sotta, F Wacquant, J Rosa, ... IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004 …, 2004 | 58 | 2004 |
| The potential of block copolymer’s directed self-assembly for contact hole shrink and contact multiplication R Tiron, A Gharbi, M Argoud, X Chevalier, J Belledent, PP Barros, I Servin, ... Alternative Lithographic Technologies V 8680, 191-201, 2013 | 50 | 2013 |
| Optimization of block copolymer self-assembly through graphoepitaxy: a defectivity study R Tiron, X Chevalier, C Couderc, J Pradelles, J Bustos, L Pain, C Navarro, ... Journal of Vacuum Science & Technology B 29 (6), 2011 | 48 | 2011 |
| Low cost 65nm cmos platform for low power & general purpose applications F Arnaud, B Duriez, B Tavel, L Pain, J Todeschini, M Jurdit, Y Laplanche, ... Digest of Technical Papers. 2004 Symposium on VLSI Technology, 2004., 10-11, 2004 | 45 | 2004 |
| Direct write lithography: the global solution for R&D and manufacturing L Pain, S Tedesco, C Constancias Comptes Rendus Physique 7 (8), 910-923, 2006 | 41 | 2006 |
| A cost-effective low power platform for the 45-nm technology node E Josse, S Parihar, O Callen, P Ferreira, C Monget, A Farcy, M Zaleski, ... 2006 International Electron Devices Meeting, 1-4, 2006 | 38 | 2006 |
| 0.248/spl mu/m/sup 2/and 0.334/spl mu/m/sup 2/conventional bulk 6T-SRAM bit-cells for 45nm node low cost-general purpose applications F Boeuf, F Arnaud, C Boccaccio, F Salvetti, J Todeschini, L Pain, M Jurdit, ... Digest of Technical Papers. 2005 Symposium on VLSI Technology, 2005., 130-131, 2005 | 36 | 2005 |
| Pattern density multiplication by direct self assembly of block copolymers: toward 300mm CMOS requirements R Tiron, X Chevalier, S Gaugiran, J Pradelles, H Fontaine, C Couderc, ... Alternative Lithographic Technologies IV 8323, 135-141, 2012 | 32 | 2012 |
| MAGIC: a European program to push the insertion of maskless lithography L Pain, B Icard, S Tedesco, B Kampherbeek, G Gross, C Klein, ... Emerging Lithographic Technologies XII 6921, 535-546, 2008 | 27 | 2008 |
| Transitioning of direct e-beam write technology from research and development into production flow L Pain, B Icard, S Manakli, J Todeschini, B Minghetti, V Wang, D Henry Microelectronic Engineering 83 (4-9), 749-753, 2006 | 27 | 2006 |
| 5 kV multielectron beam lithography: MAPPER tool and resist process characterization D Rio, C Constancias, M Martin, B Icard, J van Nieuwstadt, J Vijverberg, ... Journal of Vacuum Science & Technology B 28 (6), C6C14-C6C20, 2010 | 26 | 2010 |
| Development of multiple pass exposure in electron beam direct write lithography for sub-32nm nodes L Martin, S Manakli, B Icard, J Pradelles, R Orobtchouk, A Poncet, L Pain Photomask Technology 2009 7488, 369-380, 2009 | 24 | 2009 |
| 300 mm multi level air gap integration for edge interconnect technologies and specific high performance applications R Gras, F Gaillard, D Bouchu, A Farcy, E Petitprez, B Icard, JC Le-Denmat, ... 2008 International Interconnect Technology Conference, 196-198, 2008 | 24 | 2008 |
| Complementary dose and geometrical solutions for electron beam direct write lithography proximity effects correction: application for sub- node product … S Manakli, C Soonekindt, L Pain, JC Le-Denmat, J Todeschini, B Icard, ... Journal of Micro/Nanolithography, MEMS and MOEMS 6 (3), 033001-033001-7, 2007 | 24 | 2007 |
| Resolution limit of negative tone chemically amplified resist used for hybrid lithography: Influence of the molecular weight L Pain, C Higgins, B Scarfogliere, S Tedesco, B Dal’Zotto, C Gourgon, ... Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2000 | 23 | 2000 |
| A full-process chain assessment for nanoimprint technology on 200-mm industrial platform H Teyssedre, S Landis, C Thanner, M Laure, J Khan, S Bos, M Eibelhuber, ... Advanced Optical Technologies 6 (3-4), 277-292, 2017 | 22 | 2017 |
| Study on line edge roughness for electron beam acceleration voltages from D Rio, C Constancias, M Saied, B Icard, L Pain Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2009 | 22 | 2009 |
| New writing strategy in electron beam direct write lithography to improve critical dense lines patterning for sub-45nm nodes L Martin, S Manakli, B Icard, J Pradelles, R Orobtchouk, A Poncet, L Pain 25th European Mask and Lithography Conference, 1-12, 2009 | 22 | 2009 |
