| Geometrical enhancement of low-field magnetoresistance in silicon C Wan, X Zhang, X Gao, J Wang, X Tan Nature 477 (7364), 304-307, 2011 | 102 | 2011 |
| Negative magnetoresistance in undoped semiconducting amorphous carbon films R Ur Rehman Sagar, X Zhang, J Wang, C Xiong Journal of Applied Physics 115 (12), 2014 | 31 | 2014 |
| Large positive magnetoresistance in germanium J Chen, X Zhang, Z Luo, J Wang, HG Piao Journal of Applied Physics 116 (11), 2014 | 27 | 2014 |
| Magnetotransport properties of undoped amorphous carbon films J Wang, X Zhang, C Wan, J Vanacken, VV Moshchalkov Carbon 59, 278-282, 2013 | 26 | 2013 |
| Enhanced low field magnetoresistance in germanium and silicon-diode combined device at room temperature J Chen, X Zhang, HG Piao, J Wang, Z Luo Applied Physics Letters 105 (19), 2014 | 18 | 2014 |
| Magnetic field controllable nonvolatile resistive switching effect in silicon device J Wang, X Zhang, HG Piao, Z Luo, C Xiong, X Wang, F Yang Applied Physics Letters 104 (24), 2014 | 18 | 2014 |
| Magnetoresistance sign change in iron-doped amorphous carbon films at low temperatures J Wang, X Zhang, C Wan, J Vanacken, Z Luo, C Xiong, VV Moshchalkov Journal of Physics D: Applied Physics 47 (21), 215002, 2014 | 16 | 2014 |
| Diode assisted giant positive magnetoresistance in n-type GaAs at room temperature J Wang, X Zhang, C Wan, HG Piao, Z Luo, SY Xu Journal of Applied Physics 114 (3), 2013 | 10 | 2013 |
| Two-dimensional-Dirac surface states and bulk gap probed via quantum capacitance in a three-dimensional topological insulator J Wang, C Gorini, K Richter, Z Wang, Y Ando, D Weiss Nano Letters 20 (12), 8493-8499, 2020 | 9 | 2020 |
| Mobility spectrum analysis on three-dimensional topological insulator BiSbTeSe2 J Wang, A Kurzendorfer, L Chen, Z Wang, Y Ando, Y Xu, I Miotkowski, ... Applied Physics Letters 118 (25), 2021 | 5 | 2021 |
| Current Induced Non-Volatile Resistive Switching Effect in Silicon Devices with Large Magnetoresistance JM Wang, XZ Zhang, HG Piao, ZC Luo, CY Xiong Chinese Physics Letters 31 (7), 077201, 2014 | 2 | 2014 |
| Capacitance–Voltage Measurements of (Bi1–xSbx)2Te3 Field Effect Devices J Wang, M Schitko, G Mussler, D Grützmacher, D Weiss physica status solidi (b) 256 (7), 1800624, 2019 | | 2019 |
| Silicon based nonvolatile magnetic memristor C Xiong, X Zhang, Z Luo, J Wang, J Chen, Z Guo 2015 IEEE International Magnetics Conference (INTERMAG), 1-1, 2015 | | 2015 |
| Current Induced Non-Volatile Resistive Switching Effect in Silicon Devices with Large Magnetoresistance 王集敏， 章晓中， 朴红光， 罗昭初， 熊成悦 中国物理快报: 英文版, 156-159, 2014 | | 2014 |
Caihua WanInstitute of Physics, Chinese Academy of SciencesAdresse e-mail validée de iphy.ac.cn
