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S Reza Hosseini
S Reza Hosseini
Assistant Professor, Khoy Branch, Islamic Azad University
Verified email at iaukhoy.ac.ir
Title
Cited by
Cited by
Year
Quantum simulation study of gate-all-around (GAA) silicon nanowire transistor and double gate metal oxide semiconductor field effect transistor (DG MOSFET)
R Hosseini, M Fathipour, R Faez
Int. J. Phys. Sci 7 (28), 5054-5061, 2012
212012
Simulation Study of Circuit Performance of GAA Silicon Nanowire Transistor and DG MOSFET
R Hosseini, N Teimuorzadeh
Physical Review and Research International 3 (4), 568-576, 2013
142013
A comparative study of NEGF and DDMS models in the GAA silicon nanowire transistor
R Hosseini, M Fathipour, R Faez
International Journal of Electronics 99 (9), 1299-1307, 2012
132012
Performance study and analysis of heterojunction gate all around nanowire tunneling field effect transistor
M Roohy, R Hosseini
Journal of Optoelectronical Nanostructures 4 (2), 13-28, 2019
112019
Analysis and Simulation of a Junctionless Double Gate MOSFET for High-speed Applications
R Hosseini
Journal of Korean Physical Society 67 (9), 1615-1618, 2015
102015
A new source heterojunction strained channel structure for ballistic gate all around nanowire transistor
R Hosseini, N Teimourzadeh, M Fathipour
Journal of Computational Electronics 13, 170-179, 2014
72014
Tunable far infrared detection using quantum rings-inwell intersubband photodetectors
R Samadzadeh, M Zavvari, R Hosseini
Optical and Quantum Electronics 47 (11), 3555-3565, 2015
62015
A quantum mechanical transport approach to simulation of quadruple gate silicon nanowire transistor
F Karimi, M Fathipour, R Hosseini
Journal of Nanoscience and Nanotechnology 11 (12), 10476-10479, 2011
62011
Uncoupled mode space approach for analysis of nanoscale strained junctionless double-gate MOSFET
R Hosseini
journal of computational electronics, 2016
52016
ELECTRICAL CHARACTERISTICS OF STRAINED DOUBLE GATE MOSFET
H Valinajad, R Hosseini, ME Akbari
International Journal of Research and Reviews in Applied Sciences 13 (2 …, 2012
52012
Introducing a high sensitive Hall effect sensor
R Hosseini, A Kashaninia
World Academy Science, Engineering and Technology 39, 431-434, 2008
42008
Device and Circuit Performance Simulation of a New Nano-Scaled Side Contacted Field Effect Diode Structure
O Talati Khoei, R Hosseini
Journal of Optoelectronical Nanostructures 4 (3), 17-32, 2019
32019
Performance evaluation of source heterojunction strained channel gate all around nanowire transistor
R Hosseini, M Fathipour, R Faez
Modern Physics Letters B 26 (12), 1250076, 2012
32012
Window layer based on ZnO and Ag thin films incorporated in solar cells as a part of hybrid energy-saving system
H Gholamzadeh, R Hosseini, H Veladi, H Rahimi
Optica Applicata 53 (1), 2023
22023
Design and Analysis of a Multi Material Double Gate Junctionless Tunnel Field Effect Transistor
RH Negar Bashiri
Journal of Iranian Association of Electrical and Electronics Engineers 18 (4 …, 2021
22021
Amplification of Output Voltage by Using Silicon Based Solar Cells, Piezoelectric and Thermoelectric Conversion Transducers: A Triple Energy Harvester
H Golamzadeh, R Hosseini, H Veladi, H Rahimi
Journal of Optoelectronical Nanostructures 8 (2), 32-50, 2023
12023
The impact of structural parameters on the electrical characteristics of GAA Silicon nanowire transistor
M Fathipour, F Karimi, R Hosseini
2009 International Semiconductor Device Research Symposium, 1-2, 2009
12009
Design and Performance Analysis of Heterojunction Dual Wire Gate All Around Nanosheet Field Effect Transistor
H Rasooli Saghai, R Abbasnezhad, R Hosseini, A Sedghi, A Vahedi
Iranian Journal of Physics Research, 2024
2024
Electrical performance estimation and comparative study of heterojunction strained and conventional gate all around nanosheet field effect transistors
R Abbasnezhad, HR Saghai, R Hosseini, A Sedghi, A Vahedi
Journal of Electrical Engineering 74 (6), 503-512, 2023
2023
Design and Simulation of a 2GHz, 64×64 bit Arithmetic Logic Unit in 130nm CMOS Technology
RHS Maryam Sistanizadeh
Journal of Iranian Association of Electrical and Electronics Engineers 18 (1 …, 2021
2021
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