Michal Bockowski
Michal Bockowski
Institute of High Pressure Physics PAS
Verified email at unipress.waw.pl
Cited by
Cited by
Lattice parameters of gallium nitride
M Leszczynski, H Teisseyre, T Suski, I Grzegory, M Bockowski, J Jun, ...
Applied Physics Letters 69 (1), 73-75, 1996
Mechanism of yellow luminescence in GaN
T Suski, P Perlin, H Teisseyre, M Leszczyński, I Grzegory, J Jun, ...
Applied physics letters 67 (15), 2188-2190, 1995
III–V Nitrides—thermodynamics and crystal growth at high N2 pressure
I Grzegory, J Jun, M Boćkowski, M Wroblewski, B Łucznik, S Porowski
Journal of Physics and Chemistry of Solids 56 (3-4), 639-647, 1995
Luminescence and reflectivity in the exciton region of homoepitaxial GaN layers grown on GaN substrates
K Pakuła, A Wysmołek, KP Korona, JM Baranowski, R Stępniewski, ...
Solid state communications 97 (11), 919-922, 1996
Thermal conductivity of GaN crystals in 4.2–300 K range
A Jeżowski, BA Danilchenko, M Boćkowski, I Grzegory, S Krukowski, ...
Solid state communications 128 (2-3), 69-73, 2003
Thermal properties of indium nitride
S Krukowski, A Witek, J Adamczyk, J Jun, M Bockowski, I Grzegory, ...
Journal of Physics and Chemistry of Solids 59 (3), 289-295, 1998
Technology of gallium nitride crystal growth
D Ehrentraut, E Meissner, M Bockowski
Springer Science & Business Media, 2010
Lattice constants, thermal expansion and compressibility of gallium nitride
M Leszczynski, T Suski, P Perlin, H Teisseyre, I Grzegory, M Bockowski, ...
Journal of Physics D: Applied Physics 28 (4A), A149, 1995
Optical and magnetic properties of Mn in bulk GaN
A Wolos, M Palczewska, M Zajac, J Gosk, M Kaminska, A Twardowski, ...
Physical Review B 69 (11), 115210, 2004
Structural characterization of bulk GaN crystals grown under high hydrostatic pressure
Z Liliental-Weber, C Kisielowski, S Ruvimov, Y Chen, J Washburn, ...
Journal of electronic materials 25 (9), 1545-1550, 1996
Deposition of thick GaN layers by HVPE on the pressure grown GaN substrates
B Łucznik, B Pastuszka, I Grzegory, M Boćkowski, G Kamler, ...
Journal of crystal growth 281 (1), 38-46, 2005
High mobility two-dimensional electron gas in heterostructures grown on bulk GaN by plasma assisted molecular beam epitaxy
C Skierbiszewski, K Dybko, W Knap, M Siekacz, W Krupczyński, G Nowak, ...
Applied Physics Letters 86 (10), 102106, 2005
Challenges and future perspectives in HVPE-GaN growth on ammonothermal GaN seeds
M Bockowski, M Iwinska, M Amilusik, M Fijalkowski, B Lucznik, T Sochacki
Semiconductor Science and Technology 31 (9), 093002, 2016
Identification of the prime optical center in GaN: Eu 3+
IS Roqan, KP O'Donnell, RW Martin, PR Edwards, SF Song, A Vantomme, ...
Physical Review B 81 (8), 085209, 2010
High pressure phase transition in aluminium nitride
I Gorczyca, NE Christensen, P Perlin, I Grzegory, J Jun, M Bockowski
Solid state communications 79 (12), 1033-1034, 1991
The microstructure of gallium nitride monocrystals grown at high pressure
M Leszczynski, I Grzegory, H Teisseyre, T Suski, M Bockowski, J Jun, ...
Journal of crystal growth 169 (2), 235-242, 1996
Mechanisms of crystallization of bulk GaN from the solution under high N2 pressure
I Grzegory, M Boćkowski, B Łucznik, S Krukowski, Z Romanowski, ...
Journal of crystal growth 246 (3-4), 177-186, 2002
Method of fabrication of highly resistive GaN bulk crystals
S Porowski, M Bockowski, I Grzegory, S Krukowski, M Leszczynski, ...
US Patent 6,273,948, 2001
Heat capacity of α− Ga N: Isotope effects
RK Kremer, M Cardona, E Schmitt, J Blumm, SK Estreicher, M Sanati, ...
Physical Review B 72 (7), 075209, 2005
Discovery of ultra-crack-resistant oxide glasses with adaptive networks
K Januchta, RE Youngman, A Goel, M Bauchy, SL Logunov, SJ Rzoska, ...
Chemistry of Materials 29 (14), 5865-5876, 2017
The system can't perform the operation now. Try again later.
Articles 1–20