| Lattice parameters of gallium nitride M Leszczynski, H Teisseyre, T Suski, I Grzegory, M Bockowski, J Jun, ... Applied Physics Letters 69 (1), 73-75, 1996 | 435 | 1996 |
| Mechanism of yellow luminescence in GaN T Suski, P Perlin, H Teisseyre, M Leszczyński, I Grzegory, J Jun, ... Applied physics letters 67 (15), 2188-2190, 1995 | 239 | 1995 |
| III–V Nitrides—thermodynamics and crystal growth at high N2 pressure I Grzegory, J Jun, M Boćkowski, M Wroblewski, B Łucznik, S Porowski Journal of Physics and Chemistry of Solids 56 (3-4), 639-647, 1995 | 171 | 1995 |
| Luminescence and reflectivity in the exciton region of homoepitaxial GaN layers grown on GaN substrates K Pakuła, A Wysmołek, KP Korona, JM Baranowski, R Stępniewski, ... Solid state communications 97 (11), 919-922, 1996 | 161 | 1996 |
| Thermal conductivity of GaN crystals in 4.2–300 K range A Jeżowski, BA Danilchenko, M Boćkowski, I Grzegory, S Krukowski, ... Solid state communications 128 (2-3), 69-73, 2003 | 142 | 2003 |
| Thermal properties of indium nitride S Krukowski, A Witek, J Adamczyk, J Jun, M Bockowski, I Grzegory, ... Journal of Physics and Chemistry of Solids 59 (3), 289-295, 1998 | 117 | 1998 |
| Structural characterization of bulk GaN crystals grown under high hydrostatic pressure Z Liliental-Weber, C Kisielowski, S Ruvimov, Y Chen, J Washburn, ... Journal of electronic materials 25 (9), 1545-1550, 1996 | 101 | 1996 |
| Optical and magnetic properties of Mn in bulk GaN A Wolos, M Palczewska, M Zajac, J Gosk, M Kaminska, A Twardowski, ... Physical Review B 69 (11), 115210, 2004 | 95 | 2004 |
| Lattice constants, thermal expansion and compressibility of gallium nitride M Leszczynski, T Suski, P Perlin, H Teisseyre, I Grzegory, M Bockowski, ... Journal of Physics D: Applied Physics 28 (4A), A149, 1995 | 94 | 1995 |
| Technology of gallium nitride crystal growth D Ehrentraut, E Meissner, M Bockowski Springer Science & Business Media, 2010 | 93 | 2010 |
| High mobility two-dimensional electron gas in heterostructures grown on bulk GaN by plasma assisted molecular beam epitaxy C Skierbiszewski, K Dybko, W Knap, M Siekacz, W Krupczyński, G Nowak, ... Applied Physics Letters 86 (10), 102106, 2005 | 83 | 2005 |
| Deposition of thick GaN layers by HVPE on the pressure grown GaN substrates B Łucznik, B Pastuszka, I Grzegory, M Boćkowski, G Kamler, ... Journal of crystal growth 281 (1), 38-46, 2005 | 79 | 2005 |
| High pressure phase transition in aluminium nitride I Gorczyca, NE Christensen, P Perlin, I Grzegory, J Jun, M Bockowski Solid state communications 79 (12), 1033-1034, 1991 | 75 | 1991 |
| Mechanisms of crystallization of bulk GaN from the solution under high N2 pressure I Grzegory, M Boćkowski, B Łucznik, S Krukowski, Z Romanowski, ... Journal of crystal growth 246 (3-4), 177-186, 2002 | 72 | 2002 |
| The microstructure of gallium nitride monocrystals grown at high pressure M Leszczynski, I Grzegory, H Teisseyre, T Suski, M Bockowski, J Jun, ... Journal of crystal growth 169 (2), 235-242, 1996 | 72 | 1996 |
| Method of fabrication of highly resistive GaN bulk crystals S Porowski, M Bockowski, I Grzegory, S Krukowski, M Leszczynski, ... US Patent 6,273,948, 2001 | 71 | 2001 |
| Identification of the prime optical center in GaN: Eu 3+ IS Roqan, KP O'Donnell, RW Martin, PR Edwards, SF Song, A Vantomme, ... Physical Review B 81 (8), 085209, 2010 | 68 | 2010 |
| Heat capacity of α− Ga N: Isotope effects RK Kremer, M Cardona, E Schmitt, J Blumm, SK Estreicher, M Sanati, ... Physical Review B 72 (7), 075209, 2005 | 67 | 2005 |
| Challenges and future perspectives in HVPE-GaN growth on ammonothermal GaN seeds M Bockowski, M Iwinska, M Amilusik, M Fijalkowski, B Lucznik, T Sochacki Semiconductor Science and Technology 31 (9), 093002, 2016 | 58 | 2016 |
| Crystal growth of III-N compounds under high nitrogen pressure I Grzegory, J Jun, M Boćkowski, S Porowski Physica B: Condensed Matter 185 (1-4), 99-102, 1993 | 56 | 1993 |
