Michal Bockowski
Michal Bockowski
Institute of High Pressure Physics PAS
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Cited by
Cited by
Lattice parameters of gallium nitride
M Leszczynski, H Teisseyre, T Suski, I Grzegory, M Bockowski, J Jun, ...
Applied Physics Letters 69 (1), 73-75, 1996
Mechanism of yellow luminescence in GaN
T Suski, P Perlin, H Teisseyre, M Leszczyński, I Grzegory, J Jun, ...
Applied physics letters 67 (15), 2188-2190, 1995
Thermal conductivity of GaN crystals in 4.2–300 K range
A Jeżowski, BA Danilchenko, M Boćkowski, I Grzegory, S Krukowski, ...
Solid state communications 128 (2-3), 69-73, 2003
III–V Nitrides—thermodynamics and crystal growth at high N2 pressure
I Grzegory, J Jun, M Boćkowski, M Wroblewski, B Łucznik, S Porowski
Journal of Physics and Chemistry of Solids 56 (3-4), 639-647, 1995
Luminescence and reflectivity in the exciton region of homoepitaxial GaN layers grown on GaN substrates
K Pakuła, A Wysmołek, KP Korona, JM Baranowski, R Stępniewski, ...
Solid state communications 97 (11), 919-922, 1996
Challenges and future perspectives in HVPE-GaN growth on ammonothermal GaN seeds
M Bockowski, M Iwinska, M Amilusik, M Fijalkowski, B Lucznik, T Sochacki
Semiconductor Science and Technology 31 (9), 093002, 2016
Technology of gallium nitride crystal growth
D Ehrentraut, E Meissner, M Bockowski
Springer Science & Business Media, 2010
Thermal properties of indium nitride
S Krukowski, A Witek, J Adamczyk, J Jun, M Bockowski, I Grzegory, ...
Journal of Physics and Chemistry of Solids 59 (3), 289-295, 1998
Discovery of ultra-crack-resistant oxide glasses with adaptive networks
K Januchta, RE Youngman, A Goel, M Bauchy, SL Logunov, SJ Rzoska, ...
Chemistry of Materials 29 (14), 5865-5876, 2017
Highly effective activation of Mg-implanted p-type GaN by ultra-high-pressure annealing
H Sakurai, M Omori, S Yamada, Y Furukawa, H Suzuki, T Narita, ...
Applied Physics Letters 115 (14), 2019
Optical and magnetic properties of Mn in bulk GaN
A Wolos, M Palczewska, M Zajac, J Gosk, M Kaminska, A Twardowski, ...
Physical Review B 69 (11), 115210, 2004
Identification of the prime optical center in GaN: Eu 3+
IS Roqan, KP O'Donnell, RW Martin, PR Edwards, SF Song, A Vantomme, ...
Physical Review B 81 (8), 085209, 2010
Structure and mechanical properties of compressed sodium aluminosilicate glasses: Role of non-bridging oxygens
TK Bechgaard, A Goel, RE Youngman, JC Mauro, SJ Rzoska, ...
Journal of Non-Crystalline Solids 441, 49-57, 2016
Structural characterization of bulk GaN crystals grown under high hydrostatic pressure
Z Liliental-Weber, C Kisielowski, S Ruvimov, Y Chen, J Washburn, ...
Journal of electronic materials 25, 1545-1550, 1996
Lattice constants, thermal expansion and compressibility of gallium nitride
M Leszczynski, T Suski, P Perlin, H Teisseyre, I Grzegory, M Bockowski, ...
Journal of Physics D: Applied Physics 28 (4A), A149, 1995
Growth of bulk GaN crystals
R Kucharski, T Sochacki, B Lucznik, M Bockowski
Journal of Applied Physics 128 (5), 2020
Basic ammonothermal growth of Gallium Nitride–State of the art, challenges, perspectives
M Zajac, R Kucharski, K Grabianska, A Gwardys-Bak, A Puchalski, ...
Progress in Crystal Growth and Characterization of Materials 64 (3), 63-74, 2018
Deposition of thick GaN layers by HVPE on the pressure grown GaN substrates
B Łucznik, B Pastuszka, I Grzegory, M Boćkowski, G Kamler, ...
Journal of crystal growth 281 (1), 38-46, 2005
High mobility two-dimensional electron gas in AlGaN∕ GaN heterostructures grown on bulk GaN by plasma assisted molecular beam epitaxy
C Skierbiszewski, K Dybko, W Knap, M Siekacz, W Krupczyński, G Nowak, ...
Applied Physics Letters 86 (10), 2005
Method of fabrication of highly resistive GaN bulk crystals
S Porowski, M Bockowski, I Grzegory, S Krukowski, M Leszczynski, ...
US Patent 6,273,948, 2001
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