Fabian Cadiz
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Excitonic Linewidth Approaching the Homogeneous Limit in -Based van der Waals Heterostructures
F Cadiz, E Courtade, C Robert, G Wang, Y Shen, H Cai, T Taniguchi, ...
Physical Review X 7 (2), 021026, 2017
Exciton radiative lifetime in transition metal dichalcogenide monolayers
C Robert, D Lagarde, F Cadiz, G Wang, B Lassagne, T Amand, ...
Physical review B 93 (20), 205423, 2016
In-plane propagation of light in transition metal dichalcogenide monolayers: optical selection rules
G Wang, C Robert, MM Glazov, F Cadiz, E Courtade, T Amand, ...
Physical review letters 119 (4), 047401, 2017
Charged excitons in monolayer : Experiment and theory
E Courtade, M Semina, M Manca, MM Glazov, C Robert, F Cadiz, G Wang, ...
Physical Review B 96 (8), 085302, 2017
Fine structure and lifetime of dark excitons in transition metal dichalcogenide monolayers
C Robert, T Amand, F Cadiz, D Lagarde, E Courtade, M Manca, ...
Physical review B 96 (15), 155423, 2017
Enabling valley selective exciton scattering in monolayer WSe2 through upconversion
M Manca, MM Glazov, C Robert, F Cadiz, T Taniguchi, K Watanabe, ...
Nature communications 8 (1), 14927, 2017
Control of exciton valley coherence in transition metal dichalcogenide monolayers
G Wang, X Marie, BL Liu, T Amand, C Robert, F Cadiz, P Renucci, ...
Physical review letters 117 (18), 187401, 2016
Exciton diffusion in WSe2 monolayers embedded in a van der Waals heterostructure
F Cadiz, C Robert, E Courtade, M Manca, L Martinelli, T Taniguchi, ...
Applied Physics Letters 112 (15), 2018
Optical spectroscopy of excited exciton states in monolayers in van der Waals heterostructures
C Robert, MA Semina, F Cadiz, M Manca, E Courtade, T Taniguchi, ...
Physical Review Materials 2 (1), 011001, 2018
Surface-enhanced gallium arsenide photonic resonator with quality factor of 6 × 106
B Guha, F Marsault, F Cadiz, L Morgenroth, V Ulin, V Berkovitz, ...
Optica 4 (2), 218-221, 2017
Excitonic properties of semiconducting monolayer and bilayer
C Robert, R Picard, D Lagarde, G Wang, JP Echeverry, F Cadiz, ...
Physical Review B 94 (15), 155425, 2016
Ultra-low power threshold for laser induced changes in optical properties of 2D molybdenum dichalcogenides
F Cadiz, C Robert, G Wang, W Kong, X Fan, M Blei, D Lagarde, M Gay, ...
2D Materials 3 (4), 045008, 2016
Well separated trion and neutral excitons on superacid treated MoS2 monolayers
F Cadiz, S Tricard, M Gay, D Lagarde, G Wang, C Robert, P Renucci, ...
Applied Physics Letters 108 (25), 2016
Spin/valley pumping of resident electrons in WSe2 and WS2 monolayers
C Robert, S Park, F Cadiz, L Lombez, L Ren, H Tornatzky, A Rowe, ...
Nature communications 12 (1), 5455, 2021
Imaging ambipolar diffusion of photocarriers in GaAs thin films.
EP D. Paget, F. Cadiz, A.C.H. Rowe, F. Moreau, S. Arscott
Journal of Applied Physics 111, 123720, 2012
Surface recombination in doped semiconductors: Effect of light excitation power and of surface passivation.
EP F. Cadiz, D. Paget, A.C.H. Rowe, V.L. Berkovits, V.P. Ulin, S. Arscott
Journal of Applied Physics 114, 103711, 2013
All optical method for investigation of spin and charge transport in semiconductors: Combination of spatially and time-resolved luminescence.
EP F. Cadiz, P. Barate, D. Paget, D. Grebenkov, J.P. Korb, A.C.H. Rowe, T ...
Journal of Applied Physics 116, 023711, 2014
Electrical initialization of electron and nuclear spins in a single quantum dot at zero magnetic field
F Cadiz, A Djeffal, D Lagarde, A Balocchi, B Tao, B Xu, S Liang, M Stoffel, ...
Nano Letters 18 (4), 2381-2386, 2018
Effect of the Pauli principle on photoelectron spin transport in GaAs
F Cadiz, D Paget, ACH Rowe, T Amand, P Barate, S Arscott
Physical Review B 91 (16), 165203, 2015
Bias Dependence of the Electrical Spin Injection into GaAs from Injectors with Different MgO Growth Processes
P Barate, SH Liang, TT Zhang, J Frougier, B Xu, P Schieffer, M Vidal, ...
Physical Review Applied 8 (5), 054027, 2017
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