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I. Martin-Bragado
I. Martin-Bragado
Software and simulation engineer
Verified email at ucam.edu
Title
Cited by
Cited by
Year
Carbon in silicon: Modeling of diffusion and clustering mechanisms
R Pinacho, P Castrillo, M Jaraiz, I Martin-Bragado, J Barbolla, ...
Journal of applied physics 92, 1582, 2002
2132002
MMonCa: an Object Kinetic Monte Carlo simulator for damage irradiation evolution and defect diffusion
I Martin-Bragado, A Rivera, G Valles, JL Gomez-Selles, MJ Caturla
Computer Physics Communications 184 (12), 2703–2710, 2013
1242013
Influence of grain boundaries on the radiation-induced defects and hydrogen in nanostructured and coarse-grained tungsten
G Valles, M Panizo-Laiz, C González, I Martin-Bragado, ...
Acta Materialia 122, 277-286, 2017
802017
Facet formation during solid phase epitaxy regrowth: A lattice kinetic Monte Carlo model
I Martin-Bragado, V Moroz
Applied Physics Letters 95 (12), 123123-123123-3, 2009
632009
Kinetic Monte Carlo simulation for semiconductor processing: A review
I Martin-Bragado, R Borges, JP Balbuena, M Jaraiz
Progress in Materials Science 92, 1-32, 2018
542018
The influence of high grain boundary density on helium retention in tungsten
G Valles, C González, I Martin-Bragado, R Iglesias, JM Perlado, A Rivera
Journal of Nuclear Materials 457, 80-87, 2015
532015
Temperature dependence of underdense nanostructure formation in tungsten under helium irradiation
G Valles, I Martin-Bragado, K Nordlund, A Lasa, C Björkas, E Safi, ...
Journal of Nuclear Materials 490, 108-114, 2017
522017
Modeling arsenic deactivation through arsenic-vacancy clusters using an atomistic kinetic Monte Carlo approach
R Pinacho, M Jaraiz, P Castrillo, I Martin-Bragado, JE Rubio, J Barbolla
Applied Physics Letters 86 (25), 252103-252103-3, 2005
432005
Physical atomistic kinetic Monte Carlo modeling of Fermi-level effects of species diffusing in silicon
I Martin-Bragado, P Castrillo, M Jaraiz, R Pinacho, JE Rubio, J Barbolla
Physical Review B 72 (3), 035202, 2005
422005
Modeling of {311} facets using a lattice kinetic Monte Carlo three-dimensional model for selective epitaxial growth of silicon
I Martin-Bragado, V Moroz
Applied Physics Letters 98, 153111, 2011
362011
Atomistic Monte Carlo simulations of three-dimensional polycrystalline thin films
JE Rubio, M Jaraiz, I Martin-Bragado, JM Hernandez-Mangas, J Barbolla, ...
Journal of Applied Physics 94 (1), 163-168, 2003
362003
Group 16 elements control the synthesis of continuous fibers of carbon nanotubes
B Mas, B Alemán, I Dopico, I Martin-Bragado, T Naranjo, EM Pérez, ...
Carbon 101, 458-464, 2016
352016
Understanding Si (111) solid phase epitaxial regrowth using Monte Carlo modeling: Bi-modal growth, defect formation, and interface topology
I Martin-Bragado, B Sklenard
Journal of Applied Physics 112 (2), 2012
292012
Modeling charged defects, dopant diffusion and activation mechanisms for TCAD simulations using kinetic Monte Carlo
I Martin-Bragado, S Tian, M Johnson, P Castrillo, R Pinacho, J Rubio, ...
Nuclear Instruments and Methods in Physics Research Section B: Beam …, 2006
292006
Evolution of dislocation loops in iron under irradiation: The impact of carbon
D Terentyev, I Martin-Bragado
Scripta Materialia 97, 5--8, 2015
282015
Mobile silicon di-interstitial: Surface, self-interstitial clustering, and transient enhanced diffusion phenomena
I Martin-Bragado, M Jaraiz, P Castrillo, R Pinacho, J Barbolla, ...
Physical Review B 68 (19), 195204, 2003
282003
Ion-beam amorphization of semiconductors: A physical model based on the amorphous pocket population
KRC Mok, M Jaraiz, I Martin-Bragado, JE Rubio, P Castrillo, R Pinacho, ...
Journal of applied physics 98 (4), 046104-046104-3, 2005
272005
Substrate orientation dependence on the solid phase epitaxial growth rate of Ge
BL Darby, BR Yates, I Martin-Bragado, JL Gomez-Selles, RG Elliman, ...
Journal of Applied Physics 113 (3), 2013
252013
Importance of twin defect formation created by solid-phase epitaxial growth: An atomistic study
I Martin-Bragado
Scripta Materialia, 2011
232011
{111} local configurations: The main source of silicon defects during solid phase epitaxial regrowth modeled by lattice kinetic Monte Carlo
I Martin-Bragado
Applied Physics Letters 98 (23), 233109-233109-3, 2011
232011
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Articles 1–20