| High quality AlGaN epilayers grown on sapphire using SiNx interlayers K Forghani, M Klein, F Lipski, S Schwaiger, J Hertkorn, RAR Leute, ... Journal of crystal growth 315 (1), 216-219, 2011 | 51 | 2011 |
| Strain and defects in Si-doped (Al) GaN epitaxial layers K Forghani, L Schade, UT Schwarz, F Lipski, O Klein, U Kaiser, F Scholz Journal of Applied Physics 112 (9), 2012 | 50 | 2012 |
| Wafer‐scale epitaxial lift‐off of GaN using bandgap‐selective photoenhanced wet etching C Youtsey, R McCarthy, R Reddy, K Forghani, A Xie, E Beam, J Wang, ... physica status solidi (b) 254 (8), 1600774, 2017 | 44 | 2017 |
| TEM investigations on growth interrupted samples for the correlation of the dislocation propagation and growth mode variations in AlGaN deposited on SiNx interlayers O Klein, J Biskupek, K Forghani, F Scholz, U Kaiser Journal of crystal growth 324 (1), 63-72, 2011 | 41 | 2011 |
| AlGaN-Based 355 nm UV light-emitting diodes with high power efficiency R Gutt, T Passow, M Kunzer, W Pletschen, L Kirste, K Forghani, F Scholz, ... Applied Physics Express 5 (3), 032101, 2012 | 39 | 2012 |
| Composition dependent valence band order in c-oriented wurtzite AlGaN layers FSMF B. Neuschl, J. Helbing, M. Knab, H. Lauer, M. Madel, K. Thonke, T ... Journal of Applied Physics 116, 113506, 0 | 37* | |
| Self-limiting growth when using trimethyl bismuth (TMBi) in the metal-organic vapor phase epitaxy (MOVPE) of GaAs1− yBiy K Forghani, Y Guan, AW Wood, A Anand, SE Babcock, LJ Mawst, ... Journal of crystal growth 395, 38-45, 2014 | 35 | 2014 |
| GaAs1−y−zPyBiz, an alternative reduced band gap alloy system lattice-matched to GaAs TFK Kamran Forghani, Yingxin Guan, Maria Losurdo, Guangfu Luo, Dane Morgan ... Applied Physics Letter, 2014 | 32 | 2014 |
| Properties of ‘bulk’GaAsSbN/GaAs for multi-junction solar cell application: Reduction of carbon background concentration TW Kim, K Forghani, LJ Mawst, TF Kuech, SD LaLumondiere, Y Sin, ... Journal of crystal growth 393, 70-74, 2014 | 30 | 2014 |
| Low temperature growth of GaAs1− yBiy epitaxial layers K Forghani, A Anand, LJ Mawst, TF Kuech Journal of crystal growth 380, 23-27, 2013 | 27 | 2013 |
| High resolution synchrotron X-ray studies of phase separation phenomena and the scaling law for the threading dislocation densities reduction in high quality AlGaN heterostructure S Lazarev, S Bauer, K Forghani, M Barchuk, F Scholz, T Baumbach Journal of crystal growth 370, 51-56, 2013 | 24 | 2013 |
| Recent progress in epitaxial lift-off solar cells AP Kirk, DW Cardwell, JD Wood, A Wibowo, K Forghani, D Rowell, N Pan, ... 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion (WCPEC)(A …, 2018 | 23 | 2018 |
| Simulation supported analysis of the effect of SiNx interlayers in AlGaN on the dislocation density reduction O Klein, J Biskupek, U Kaiser, K Forghani, SB Thapa, F Scholz Journal of Physics: Conference Series 209 (1), 012018, 2010 | 22 | 2010 |
| Cathodoluminescence and photoluminescence study on AlGaN layers grown with SiNx interlayers B Neuschl, KJ Fujan, M Feneberg, I Tischer, K Thonke, K Forghani, ... Applied Physics Letters 97 (19), 2010 | 21 | 2010 |
| GaAs1− yBiy Raman signatures: illuminating relationships between the electrical and optical properties of GaAs1− yBiy and Bi incorporation J Li, K Forghani, Y Guan, W Jiao, W Kong, K Collar, TH Kim, TF Kuech, ... AIP Advances 5 (6), 2015 | 18 | 2015 |
| Annealing-induced precipitate formation behavior in MOVPE-grown GaAs1− xBix explored by atom probe tomography and HAADF-STEM AW Wood, W Chen, H Kim, Y Guan, K Forghani, A Anand, TF Kuech, ... Nanotechnology 28 (21), 215704, 2017 | 17 | 2017 |
| Study of threading dislocation density reduction in AlGaN epilayers by Monte Carlo simulation of high-resolution reciprocal-space maps of a two-layer system S Lazarev, M Barchuk, S Bauer, K Forghani, V Holý, F Scholz, ... Journal of Applied Crystallography 46 (1), 120-127, 2013 | 17 | 2013 |
| In‐situ deposited SiNx nanomask for crystal quality improvement in AlGaN K Forghani, M Gharavipour, M Klein, F Scholz, O Klein, U Kaiser, ... physica status solidi c 8 (7‐8), 2063-2065, 2011 | 17 | 2011 |
| The Effect of the Bi Precursors, (CH3)3Bi and (C2H5)3Bi, on the Metal‐Organic Vapor Phase Epitaxy of GaAs1‐yBiy Films K Forghani, Y Guan, A Wood, S Babock, L Mawst, TF Kuech Chemical Vapor Deposition 21 (7-8-9), 166-175, 2015 | 16 | 2015 |
| Growth of GaAsBi by molecular beam epitaxy: Trade-offs in optical and structural characteristics Jincheng Li (李瑾铖, Tong-Ho Kim, Kamran Forghani, Wenyuan Jiao (焦文苑, Wei ... Journal of Applied Physics, 2014 | 15 | 2014 |
LUKE MAWSTUniversity of WisconsinAdresse e-mail validée de wisc.edu
