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Miguel Montes Bajo
Miguel Montes Bajo
Lecturer (Prof. Contratado Doctor) at Universidad Politécnica Madrid
Adresse e-mail validée de upm.es
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Terahertz oscillations in an In0. 53Ga0. 47As submicron planar Gunn diode
A Khalid, GM Dunn, RF Macpherson, S Thoms, D Macintyre, C Li, ...
Journal of Applied Physics 115 (11), 2014
882014
Circumventing UV Light Induced Nanomorphology Disorder to Achieve Long Lifetime PTB7‐Th: PCBM Based Solar Cells
Q Liu, J Toudert, F Liu, P Mantilla‐Perez, MM Bajo, TP Russell, J Martorell
Advanced Energy Materials 7 (21), 1701201, 2017
852017
On the link between electroluminescence, gate current leakage, and surface defects in AlGaN/GaN high electron mobility transistors upon off-state stress
M Montes Bajo, C Hodges, MJ Uren, M Kuball
Applied Physics Letters 101 (3), 2012
762012
Thermal Properties of AlGaN/GaN HFETs on Bulk GaN Substrates
N Killat, M Montes, JW Pomeroy, T Paskova, KR Evans, J Leach, X Li, ...
Electron Device Letters, IEEE 33 (3), 366-368, 2012
762012
In0.53Ga0.47As Planar Gunn Diodes Operating at a Fundamental Frequency of 164 GHz
A Khalid, C Li, V Papageogiou, GM Dunn, MJ Steer, IG Thayne, M Kuball, ...
IEEE Electron Device Letters 34 (1), 39-41, 2013
69*2013
Homoepitaxy of non-polar ZnO/(Zn,Mg)O multi-quantum wells: From a precise growth control to the observation of intersubband transitions
NL Biavan, M Hugues, MM Bajo, J Tamayo-Arriola, A Jollivet, D Lefebvre, ...
Applied Physics Letters 111, 231903, 2017
402017
Improving the performance of a neodymium aluminium borate microchip laser crystal by resonant pumping
ZD Luo, YD Huang, M Montes, D Jaque
Applied physics letters 85 (5), 715-717, 2004
342004
An extremely thin and robust interconnecting layer providing 76% fill factor in a tandem polymer solar cell architecture
A Martínez-Otero, Q Liu, P Mantilla-Perez, MM Bajo, J Martorell
Journal of Materials Chemistry A 3 (20), 10681-10686, 2015
312015
Thermal hysteresis in the luminescence of ions in
MO Ramirez, D Jaque, M Montes, J Garcıa Solé, LE Bausá, L Ivleva
Applied physics letters 84 (15), 2787-2789, 2004
312004
Time evolution of off-state degradation of AlGaN/GaN high electron mobility transistors
MM Bajo, H Sun, MJ Uren, M Kuball
Applied Physics Letters 104 (22), 2014
302014
Short-pulse generation from a resonantly pumped NdAl3(BO3)4 microchip laser
M Montes, D Jaque, L Zundu, H Yidong
Optics letters 30 (4), 397-399, 2005
292005
Short infrared wavelength quantum cascade detectors based on m-plane ZnO/ZnMgO quantum wells
A Jollivet, B Hinkov, S Pirotta, H Hoang, S Derelle, J Jaeck, ...
Applied Physics Letters 113 (25), 2018
282018
Reliability of AlGaN/GaN high electron mobility transistors on low dislocation density bulk GaN substrate: Implications of surface step edges
N Killat, M Montes Bajo, T Paskova, KR Evans, J Leach, X Li, Ü Özgür, ...
Applied Physics Letters 103 (19), 2013
282013
Independent tuning of electron and hole confinement in InAs/GaAs quantum dots through a thin GaAsSbN capping layer
JM Ulloa, DF Reyes, M Montes, K Yamamoto, DL Sales, D Gonzalez, ...
Applied Physics Letters 100 (1), 2012
272012
Multisubband Plasmons in Doped Quantum Wells
MM Bajo, J Tamayo-Arriola, M Hugues, JM Ulloa, N Le Biavan, R Peretti, ...
Physical Review Applied 10 (2), 024005, 2018
232018
Terahertz intersubband electroluminescence from nonpolar m-plane ZnO quantum cascade structures
B Meng, B Hinkov, NML Biavan, HT Hoang, D Lefebvre, M Hugues, ...
ACS photonics 8 (1), 343-349, 2020
222020
Passive Q-switching of a diode pumped Nd3+: CGGG crystal: Benefits of inhomogeneous line broadening and short pulse generation
M Montes, C de las Heras, D Jaque
Optical Materials 28 (4), 408-414, 2006
222006
Optical phase transition in semiconductor quantum metamaterials
A Hierro, MM Bajo, M Ferraro, J Tamayo-Arriola, N Le Biavan, M Hugues, ...
Physical Review Letters 123 (11), 117401, 2019
202019
Reduction of impact ionization in GaAs-based planar Gunn diodes by anode contact design
M Montes, G Dunn, A Stephen, A Khalid, C Li, D Cumming, CH Oxley, ...
IEEE transactions on electron devices 59 (3), 654-660, 2011
202011
Impact of N on the lasing characteristics of GaInNAs∕ GaAs quantum well lasers emitting from 1.29 to 1.52 μm
JM Ulloa, A Hierro, M Montes, B Damilano, M Hugues, J Barjon, JY Duboz, ...
Applied Physics Letters 87 (25), 2005
202005
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