| Method for manufacturing a low defect interface between a dielectric and a III-V compound C Merckling US Patent 8,314,017, 2012 | 481 | 2012 |
| Room-temperature InP distributed feedback laser array directly grown on silicon Z Wang, B Tian, M Pantouvaki, W Guo, P Absil, J Van Campenhout, ... Nature Photonics 9 (12), 837-842, 2015 | 386 | 2015 |
| Undoped and in-situ B doped GeSn epitaxial growth on Ge by atmospheric pressure-chemical vapor deposition B Vincent, F Gencarelli, H Bender, C Merckling, B Douhard, DH Petersen, ... Applied Physics Letters 99 (15), 2011 | 252 | 2011 |
| Novel light source integration approaches for silicon photonics Z Wang, A Abbasi, U Dave, A De Groote, S Kumari, B Kunert, C Merckling, ... Laser & Photonics Reviews 11 (4), 1700063, 2017 | 212 | 2017 |
| Site selective integration of III–V materials on Si for nanoscale logic and photonic devices M Paladugu, C Merckling, R Loo, O Richard, H Bender, J Dekoster, ... Crystal Growth & Design 12 (10), 4696-4702, 2012 | 133 | 2012 |
| InGaAs gate-all-around nanowire devices on 300mm Si substrates N Waldron, C Merckling, L Teugels, P Ong, SAU Ibrahim, F Sebaai, ... IEEE Electron Device Letters 35 (11), 1097-1099, 2014 | 118 | 2014 |
| Heteroepitaxy of InP on Si (001) by selective-area metal organic vapor-phase epitaxy in sub-50 nm width trenches: The role of the nucleation layer and the recess engineering C Merckling, N Waldron, S Jiang, W Guo, N Collaert, M Caymax, ... Journal of Applied Physics 115 (2), 2014 | 118 | 2014 |
| An InGaAs/InP quantum well finfet using the replacement fin process integrated in an RMG flow on 300mm Si substrates N Waldron, C Merckling, W Guo, P Ong, L Teugels, S Ansar, ... 2014 Symposium on VLSI Technology (VLSI-Technology): Digest of Technical …, 2014 | 109 | 2014 |
| Border traps in Ge/III–V channel devices: Analysis and reliability aspects E Simoen, DHC Lin, A Alian, G Brammertz, C Merckling, J Mitard, ... IEEE Transactions on Device and Materials Reliability 13 (4), 444-455, 2013 | 88 | 2013 |
| Capacitance–voltage characterization of GaAs–oxide interfaces G Brammertz, HC Lin, K Martens, D Mercier, C Merckling, J Penaud, ... Journal of the Electrochemical Society 155 (12), H945, 2008 | 85 | 2008 |
| Polytypic InP nanolaser monolithically integrated on (001) silicon Z Wang, B Tian, M Paladugu, M Pantouvaki, N Le Thomas, C Merckling, ... Nano letters 13 (11), 5063-5069, 2013 | 83 | 2013 |
| Electrical properties of III-V/oxide interfaces G Brammertz, HC Lin, K Martens, AR Alian, C Merckling, J Penaud, ... ECS transactions 19 (5), 375, 2009 | 83 | 2009 |
| Advancing CMOS beyond the Si roadmap with Ge and III/V devices M Heyns, A Alian, G Brammertz, M Caymax, YC Chang, LK Chu, ... 2011 International Electron Devices Meeting, 13.1. 1-13.1. 4, 2011 | 82 | 2011 |
| Structural properties of epitaxial SrTiO3 thin films grown by molecular beam epitaxy on Si (001) G Delhaye, C Merckling, M El-Kazzi, G Saint-Girons, M Gendry, Y Robach, ... Journal of Applied Physics 100 (12), 2006 | 82 | 2006 |
| Observation of the radiative decay of the 229Th nuclear clock isomer S Kraemer, J Moens, M Athanasakis-Kaklamanakis, S Bara, K Beeks, ... Nature 617 (7962), 706-710, 2023 | 81 | 2023 |
| Germanium for advanced CMOS anno 2009: A SWOT analysis M Caymax, G Eneman, F Bellenger, C Merckling, A Delabie, G Wang, ... 2009 IEEE International Electron Devices Meeting (IEDM), 1-4, 2009 | 76 | 2009 |
| High FET Performance for a Future CMOS -Based Technology F Bellenger, B De Jaeger, C Merckling, M Houssa, J Penaud, L Nyns, ... IEEE Electron Device Letters 31 (5), 402-404, 2010 | 75 | 2010 |
| Effective reduction of interfacial traps in Al2O3/GaAs (001) gate stacks using surface engineering and thermal annealing YC Chang, C Merckling, J Penaud, CY Lu, WE Wang, J Dekoster, ... Applied physics letters 97 (11), 2010 | 74 | 2010 |
| Room temperature O-band DFB laser array directly grown on (001) silicon B Tian, Z Wang, M Pantouvaki, P Absil, J Van Campenhout, C Merckling, ... Nano letters 17 (1), 559-564, 2017 | 72 | 2017 |
| Low interfacial trap density and sub-nm equivalent oxide thickness in In0. 53Ga0. 47As (001) metal-oxide-semiconductor devices using molecular beam deposited HfO2/Al2O3 as gate … LK Chu, C Merckling, A Alian, J Dekoster, J Kwo, M Hong, M Caymax, ... Applied Physics Letters 99 (4), 2011 | 71 | 2011 |
Guy BrammertzResearcher, imec-imomecVerified email at imec.be
