Capping process of InAs∕ GaAs quantum dots studied by cross-sectional scanning tunneling microscopy Q Gong, P Offermans, R Nötzel, PM Koenraad, JH Wolter
Applied physics letters 85 (23), 5697-5699, 2004
136 2004 Wavelength tuning of InAs quantum dots grown on InP (100) by chemical-beam epitaxy Q Gong, R Nötzel, PJ Van Veldhoven, TJ Eijkemans, JH Wolter
Applied physics letters 84 (2), 275-277, 2004
113 2004 Quantum-dot superluminescent diode: A proposal for an ultra-wide output spectrum Z Sun, D Ding, Q Gong, W Zhou, B Xu, ZG Wang
Optical and quantum electronics 31 (12), 1235-1246, 1999
113 1999 Chemical vapor deposition of graphene on liquid metal catalysts G Ding, Y Zhu, S Wang, Q Gong, L Sun, T Wu, X Xie, M Jiang
Carbon 53, 321-326, 2013
92 2013 All-optical switching due to state filling in quantum dots R Prasanth, JEM Haverkort, A Deepthy, EW Bogaart, J Van der Tol, ...
Applied physics letters 84 (20), 4059-4061, 2004
78 2004 InPBi single crystals grown by molecular beam epitaxy K Wang, Y Gu, HF Zhou, LY Zhang, CZ Kang, MJ Wu, WW Pan, PF Lu, ...
Scientific reports 4 (1), 1-6, 2014
77 2014 Formation of columnar J He, R Nötzel, P Offermans, PM Koenraad, Q Gong, GJ Hamhuis, ...
Applied Physics Letters 85 (14), 2771-2773, 2004
60 2004 Room temperature continuous-wave operation of InAs/InP (100) quantum dot lasers grown by gas-source molecular-beam epitaxy SG Li, Q Gong, YF Lao, K He, J Li, YG Zhang, SL Feng, HL Wang
Applied Physics Letters 93 (11), 111109-111109-3, 2008
56 2008 Diffusion and incorporation: shape evolution during overgrowth on structured substrates W Braun, VM Kaganer, A Trampert, HP Schönherr, Q Gong, R Nötzel, ...
Journal of crystal growth 227, 51-55, 2001
56 2001 Structural and optical characterizations of InPBi thin films grown by molecular beam epitaxy Y Gu, K Wang, H Zhou, Y Li, C Cao, L Zhang, Y Zhang, Q Gong, S Wang
Nanoscale research letters 9 (1), 24, 2014
53 2014 External electric field effect on the hydrogenic donor impurity in zinc-blende GaN/AlGaN cylindrical quantum dot L Jiang, H Wang, H Wu, Q Gong, S Feng
Journal of Applied Physics 105 (5), 053710, 2009
52 2009 Photonic band gap structures in the Thue-Morse lattice H Lei, J Chen, G Nouet, S Feng, Q Gong, X Jiang
Physical Review B 75 (20), 205109, 2007
48 2007 Contactless electroreflectance and theoretical studies of band gap and spin-orbit splitting in InP1−x Bix dilute bismide with x ≤ 0.034 J Kopaczek, R Kudrawiec, MP Polak, P Scharoch, M Birkett, TD Veal, ...
Applied Physics Letters 105 (22), 222104, 2014
41 2014 Two-color quantum dot laser with tunable wavelength gap SG Li, Q Gong, YF Lao, HD Yang, S Gao, P Chen, YG Zhang, SL Feng, ...
Applied Physics Letters 95 (25), 251111, 2009
38 2009 Substrate dependence of InGaAs quantum dots grown by molecular beam epitaxy W Jiang, H Xu, B Xu, W Zhou, Q Gong, D Ding, J Liang, Z Wang
Journal of Vacuum Science & Technology B 19 (1), 197-201, 2001
32 2001 Ultrafast carrier capture at room temperature in InAs/InP quantum dots emitting in the 1.55 μm wavelength region EW Bogaart, R Notzel, Q Gong, JEM Haverkort, JH Wolter
Applied Physics Letters 86 (17), 173109-173109-3, 2005
30 2005 Relative intensity noise of InAs quantum dot lasers epitaxially grown on Ge YG Zhou, C Zhou, CF Cao, JB Du, Q Gong, C Wang
Optics Express 25 (23), 28817-28824, 2017
28 2017 The electric field effect on binding energy of hydrogenic impurity in zinc-blende GaN/AlxGa 1− xN spherical quantum dot H Wu, H Wang, L Jiang, Q Gong, S Feng
Physica B: Condensed Matter 404 (1), 122-126, 2009
28 2009 InAs/InP quantum dots emitting in the 1.55 μm wavelength region by inserting submonolayer GaP interlayers Q Gong, R Notzel, PJ Van Veldhoven, TJ Eijkemans, JH Wolter
Applied physics letters 85 (8), 1404-1406, 2004
28 2004 Dynamic model and bandwidth characterization of InGaAs/GaAsSb type-II quantum wells PIN photodiodes BLC Y. J. Chen, X. Y. Zhao, J. Huang, Z. Deng, C. F. Cao, Q. Gong
Optics Express 26 (26), 35034, 2018
27 2018 