Martin Feneberg
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Stacking fault related 3.31− eV luminescence at 130− meV acceptors in zinc oxide
M Schirra, R Schneider, A Reiser, GM Prinz, M Feneberg, J Biskupek, ...
Physical Review B 77 (12), 125215, 2008
High-excitation and high-resolution photoluminescence spectra of bulk AlN
M Feneberg, RAR Leute, B Neuschl, K Thonke, M Bickermann
Physical Review B 82 (7), 075208, 2010
Growth and characterization of AlN and AlGaN epitaxial films on AlN single crystal substrates
R Dalmau, B Moody, R Schlesser, S Mita, J Xie, M Feneberg, B Neuschl, ...
Journal of The Electrochemical Society 158 (5), H530, 2011
Polarization fields of III-nitrides grown in different crystal orientations
M Feneberg, K Thonke
Journal of Physics: Condensed Matter 19 (40), 403201, 2007
Band gap renormalization and Burstein-Moss effect in silicon-and germanium-doped wurtzite GaN up to 10 20 cm− 3
M Feneberg, S Osterburg, K Lange, C Lidig, B Garke, R Goldhahn, ...
Physical Review B 90 (7), 075203, 2014
Reliable polarization control of VCSELs through monolithically integrated surface gratings: a comparative theoretical and experimental study
P Debernardi, JM Ostermann, M Feneberg, C Jalics, R Michalzik
IEEE Journal of selected topics in quantum electronics 11 (1), 107-116, 2005
Piezoelectric fields in quantum wells on different crystal facets
M Feneberg, F Lipski, R Sauer, K Thonke, T Wunderer, B Neubert, ...
Applied Physics Letters 89 (24), 242112, 2006
Bright semipolar blue light emitting diode on side facets of selectively grown GaN stripes
T Wunderer, P Brückner, B Neubert, F Scholz, M Feneberg, F Lipski, ...
Applied physics letters 89 (4), 041121, 2006
Mahan excitons in degenerate wurtzite InN: Photoluminescence spectroscopy and reflectivity measurements
M Feneberg, J Däubler, K Thonke, R Sauer, P Schley, R Goldhahn
Physical Review B 77 (24), 245207, 2008
Optimization of nucleation and buffer layer growth for improved GaN quality
J Hertkorn, P Brückner, SB Thapa, T Wunderer, F Scholz, M Feneberg, ...
Journal of crystal growth 308 (1), 30-36, 2007
Three‐dimensional GaN for semipolar light emitters
T Wunderer, M Feneberg, F Lipski, J Wang, RAR Leute, S Schwaiger, ...
physica status solidi (b) 248 (3), 549-560, 2011
Many-electron effects on the dielectric function of cubic In 2 O 3: Effective electron mass, band nonparabolicity, band gap renormalization, and Burstein-Moss shift
M Feneberg, J Nixdorf, C Lidig, R Goldhahn, Z Galazka, O Bierwagen, ...
Physical Review B 93 (4), 045203, 2016
Anisotropic absorption and emission of bulk (1 1¯ 00) AlN
M Feneberg, MF Romero, M Röppischer, C Cobet, N Esser, B Neuschl, ...
Physical Review B 87 (23), 235209, 2013
Au-catalyzed growth processes and luminescence properties of ZnO nanopillars on Si
Y Li, M Feneberg, A Reiser, M Schirra, R Enchelmaier, A Ladenburger, ...
Journal of applied physics 99 (5), 054307, 2006
Strongly transverse-electric-polarized emission from deep ultraviolet AlGaN quantum well light emitting diodes
C Reich, M Guttmann, M Feneberg, T Wernicke, F Mehnke, C Kuhn, ...
Applied Physics Letters 107 (14), 142101, 2015
Optical properties of cubic GaN from 1 to 20 eV
M Feneberg, M Röppischer, C Cobet, N Esser, J Schörmann, T Schupp, ...
Physical Review B 85 (15), 155207, 2012
I 2 basal plane stacking fault in GaN: Origin of the 3.32 eV luminescence band
I Tischer, M Feneberg, M Schirra, H Yacoub, R Sauer, K Thonke, ...
Physical Review B 83 (3), 035314, 2011
Conductivity of single ZnO nanorods after Ga implantation in a focused-ion-beam system
D Weissenberger, M Dürrschnabel, D Gerthsen, F Pérez-Willard, A Reiser, ...
Applied Physics Letters 91 (13), 132110, 2007
Influence of strain on the band gap energy of wurtzite InN
P Schley, R Goldhahn, G Gobsch, M Feneberg, K Thonke, X Wang, ...
physica status solidi (b) 246 (6), 1177-1180, 2009
Optical properties of MgZnO alloys: Excitons and exciton-phonon complexes
MD Neumann, C Cobet, N Esser, B Laumer, TA Wassner, M Eickhoff, ...
Journal of Applied Physics 110 (1), 013520, 2011
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