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Sotirios Athanasiou
Sotirios Athanasiou
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Performance and design considerations for gate-all-around stacked-NanoWires FETs
S Barraud, V Lapras, B Previtali, MP Samson, J Lacord, S Martinie, ...
2017 IEEE international electron devices meeting (IEDM), 29.2. 1-29.2. 4, 2017
1382017
Evidence of supercoupling effect in ultrathin silicon layers using a four-gate MOSFET
S Cristoloveanu, S Athanasiou, M Bawedin, P Galy
IEEE Electron Device Letters 38 (2), 157-159, 2016
312016
Molecular junctions made of tungsten-polyoxometalate self-assembled monolayers: Towards polyoxometalate-based molecular electronics devices
D Velessiotis, AM Douvas, S Athanasiou, B Nilsson, G Petersson, ...
Microelectronic engineering 88 (8), 2775-2777, 2011
232011
Novel ultrathin FD-SOI BIMOS device with reconfigurable operation
S Athanasiou, CA Legrand, S Cristoloveanu, P Galy
IEEE Transactions on Electron Devices 64 (3), 916-922, 2017
132017
BIMOS transistor in thin silicon film and new solutions for ESD protection in FDSOI UTBB CMOS technology
P Galy, S Athanasiou, S Cristoloveanu
EUROSOI-ULIS 2015: 2015 Joint International EUROSOI Workshop and …, 2015
132015
Reconfigurable ultra-thin film GDNMOS device for ESD protection in 28 nm FD-SOI technology
S Athanasiou, CA Legrand, S Cristoloveanu, P Galy
Solid-State Electronics 128, 172-179, 2017
122017
Preliminary results on TFET—Gated diode in thin silicon film for IO design & ESD protection in 28nm UTBB FD-SOI CMOS technology
P Galy, S Athanasiou
2016 International Conference on IC Design and Technology (ICICDT), 1-4, 2016
102016
GDNMOS: A new high voltage device for ESD protection in 28nm UTBB FD-SOI technology
S Athanasiou, CA Legrand, S Cristoloveanu, P Galy
2016 Joint International EUROSOI Workshop and International Conference on …, 2016
102016
Integrated circuit cointegrating a FET transistor and a RRAM memory point
L Grenouillet, S Athanasiou, P Galy
US Patent 9,831,288, 2017
82017
Enhanced substrate contact for MOS transistor in an SOI substrate, in particular an FDSOI substrate
S Athanasiou, P Galy
US Patent 10,096,708, 2018
62018
Substrate contact land for an MOS transistor in an SOI substrate, in particular an FDSOI substrate
P Galy, S Athanasiou
US Patent 9,837,413, 2017
62017
Preliminary 3D TCAD Electro-thermal Simulations of BIMOS transistor in thin silicon film for ESD protection in FDSOI UTBB CMOS technology
S Athanasiou, S Cristoloveanu, P Galy
2015 International Conference on IC Design & Technology (ICICDT), 1-4, 2015
52015
Impact of back plane on the carrier mobility in 28nm UTBB FDSOI devices, for ESD applications
S Athanasiou, P Galy, S Cristoloveanu
EUROSOI-ULIS 2015: 2015 Joint International EUROSOI Workshop and …, 2015
42015
Transistor structure
S Athanasiou, P Galy
US Patent 10,367,068, 2019
32019
Key parameters of BiMOS ESD protection device for UTBB FDSOI advanced technology
S Athanasiou, S Cristoloveanu, P Galy
2015 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference …, 2015
32015
BIMOS transistor solutions for ESD protection in FD-SOI UTBB CMOS technology
P Galy, S Athanasiou, S Cristoloveanu
Solid-State Electronics 115, 192-200, 2016
22016
Measurement of set injected charge from a californium-252 source in 340 nm straight and enclosed layout nmos and pmos transistors
D Englisch, M Horstmann, S Athanasiou, RJE Jansen, B Glass
2015 15th European Conference on Radiation and Its Effects on Components and …, 2015
22015
Holistic plug-n-play autonomous solar system integration: a real-life small-scale demonstration—a practical approach
A Dimara, C Sougles, S Athanasiou, K Grigoropoulos, P Sfakianou, ...
Electrical Engineering 105 (5), 2715-2733, 2023
12023
Device for protection against electrostatic discharges with a distributed trigger circuit
P Galy, S Athanasiou
US Patent 9,947,650, 2018
12018
Ultrathin FDSOI four-gate transistors (G4-FETs)
S Athanasiou, M Bawedin, P Galy, S Cristoloveanu
Microelectronic Engineering 180, 1-4, 2017
12017
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