Eirini Sarigiannidou
Eirini Sarigiannidou
Adresse e-mail validée de grenoble-inp.fr
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Terahertz intersubband absorption in GaN/AlGaN step quantum wells
H Machhadani, Y Kotsar, S Sakr, M Tchernycheva, R Colombelli, ...
Applied Physics Letters 97 (19), 191101, 2010
Selective area growth of well-ordered ZnO nanowire arrays with controllable polarity
V Consonni, E Sarigiannidou, E Appert, A Bocheux, S Guillemin, ...
ACS nano 8 (5), 4761-4770, 2014
Formation mechanisms of ZnO nanowires: the crucial role of crystal orientation and polarity
S Guillemin, L Rapenne, H Roussel, E Sarigiannidou, G Brémond, ...
The Journal of Physical Chemistry C 117 (40), 20738-20745, 2013
Effect of doping on the mid-infrared intersubband absorption in GaN/AlGaN superlattices grown on Si (111) templates
PK Kandaswamy, H Machhadani, Y Kotsar, S Sakr, A Das, ...
Applied Physics Letters 96 (14), 141903, 2010
Intraband emission at from quantum dots at room temperature
L Nevou, FH Julien, M Tchernycheva, F Guillot, E Monroy, ...
Applied Physics Letters 92 (16), 161105, 2008
Structural transition of inversion domain boundaries through interactions with stacking faults in epitaxial GaN
GP Dimitrakopulos, P Komninou, J Kioseoglou, T Kehagias, ...
Physical Review B 64 (24), 245325, 2001
High temperature solution growth and characterization of Cr2AlC single crystals
T Ouisse, E Sarigiannidou, O Chaix-Pluchery, H Roussel, B Doisneau, ...
Journal of crystal growth 384, 88-95, 2013
Thermal stability of the deep ultraviolet emission from AlGaN/AlN Stranski-Krastanov quantum dots
C Himwas, R Songmuang, LS Dang, J Bleuse, L Rapenne, ...
Applied Physics Letters 101 (24), 241914, 2012
Strain relaxation in GaN/AlxGa1-xN superlattices grown by plasma-assisted molecular-beam epitaxy
Y Kotsar, B Doisneau, E Bellet-Amalric, A Das, E Sarigiannidou, E Monroy
Journal of Applied Physics 110 (3), 033501, 2011
Synthesis of single crystals of V2AlC phase by high-temperature solution growth and slow cooling technique
L Shi, T Ouisse, E Sarigiannidou, O Chaix-Pluchery, H Roussel, ...
Acta Materialia 83, 304-309, 2015
From Si nanowire to SiC nanotube
L Latu-Romain, M Ollivier, A Mantoux, G Auvert, O Chaix-Pluchery, ...
Journal of Nanoparticle Research 13 (10), 5425, 2011
Waveguide saturable absorbers at 1.55 μm based on intraband transitions in GaN/AlN QDs
L Monteagudo-Lerma, S Valdueza-Felip, FB Naranjo, P Corredera, ...
Optics Express 21 (23), 27578-27586, 2013
Charge distribution and vertical electron transport through GaN/AlN/GaN single-barrier structures
S Leconte, F Guillot, E Sarigiannidou, E Monroy
Semiconductor science and technology 22 (2), 107, 2006
Microstructure of GaN films grown by RF-plasma assisted molecular beam epitaxy
P Komninou, T Kehagias, J Kioseoglou, E Sarigiannidou, T Karakostas, ...
MRS Online Proceedings Library Archive 639, 2000
New HTS 2G round wires
CE Bruzek, A Allais, S Morice, CF Theune, S Petit, M Mikolajczyk, ...
IEEE Transactions on Applied Superconductivity 22 (3), 5800204-5800204, 2011
Synthesis and characterization of Al4SiC4: a “new” wide band gap semiconductor material
D Zevgitis, O Chaix-Pluchery, B Doisneau, M Modreanu, J La Manna, ...
Materials Science Forum 821, 974-977, 2015
A chemical vapor deposition route to epitaxial superconducting NbTiN thin films
N Tsavdaris, D Harza, S Coindeau, G Renou, F Robaut, E Sarigiannidou, ...
Chemistry of Materials 29 (14), 5824-5830, 2017
AlGaN/AlN quantum dots for UV light emitters
C Himwas, M Hertog, F Donatini, LS Dang, L Rapenne, E Sarigiannidou, ...
physica status solidi c 10 (3), 285-288, 2013
Vaporization and condensation in the Al4C3-SiC system
HL Le-Tran, E Sarigiannidou, I Gélard, D Chaussende
Journal of the European Ceramic Society 37 (15), 4475-4482, 2017
Spontaneous shape transition of thin films into ZnO nanowires with high structural and optical quality
S Guillemin, E Sarigiannidou, E Appert, F Donatini, G Renou, G Bremond, ...
Nanoscale 7 (40), 16994-17003, 2015
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