Charge transfer and built-in electric fields between a crystalline oxide and silicon ZH Lim, NF Quackenbush, AN Penn, M Chrysler, M Bowden, Z Zhu, ...
Physical review letters 123 (2), 026805, 2019
30 2019 Pinhole-seeded lateral epitaxy and exfoliation of GaSb films on graphene-terminated surfaces S Manzo, PJ Strohbeen, ZH Lim, V Saraswat, D Du, S Xu, N Pokharel, ...
Nature communications 13 (1), 4014, 2022
29 2022 Structural and electrical properties of single crystalline SrZrO3 epitaxially grown on Ge (001) ZH Lim, K Ahmadi-Majlan, ED Grimley, Y Du, M Bowden, R Moghadam, ...
Journal of Applied Physics 122 (8), 2017
13 2017 Tuning metal-insulator behavior in LaTiO3/SrTiO3 heterostructures integrated directly on Si (100) through control of atomic layer thickness K Ahmadi-Majlan, T Chen, ZH Lim, P Conlin, R Hensley, M Chrysler, D Su, ...
Applied Physics Letters 112 (19), 2018
11 2018 A multi-stop time-of-flight spectrometer for the measurement of positron annihilation-induced electrons in coincidence with the Doppler-shifted annihilation gamma photon VA Chirayath, RW Gladen, AD McDonald, AJ Fairchild, PV Joglekar, ...
Review of Scientific Instruments 91 (3), 2020
10 2020 Suspended single-crystalline oxide structures on silicon through wet-etch techniques: Effects of oxygen vacancies and dislocations on etch rates ZH Lim, M Chrysler, A Kumar, JP Mauthe, DP Kumah, C Richardson, ...
Journal of Vacuum Science & Technology A 38 (1), 2020
6 2020 Selective area epitaxy of GaAs films using patterned graphene on Ge ZH Lim, S Manzo, PJ Strohbeen, V Saraswat, MS Arnold, JK Kawasaki
Applied Physics Letters 120 (5), 2022
5 2022 Interfacial structure of SrZrxTi1− xO3 films on Ge T Chen, K Ahmadi-Majlan, ZH Lim, Z Zhang, JH Ngai, AF Kemper, ...
Applied Physics Letters 113 (20), 2018
5 2018 Evidence for a positron bound state on the surface of a topological insulator K Shastry, AH Weiss, B Barbiellini, BA Assaf, ZH Lim, PV Joglekar, ...
Journal of Physics: Conference Series 618, 2015
3 2015 Probing the electronic properties of gap states near the surface of heterojunctions with high sensitivity SA Chambers, ZH Lim, JH Ngai, D Biswas, TL Lee
Physical Review Materials 8 (1), 014602, 2024
1 2024 Effect of buffer termination on intermixing and conductivity in LaTiO3/SrTiO3 heterostructures integrated on Si (100) T Chen, K Ahmadi-Majlan, ZH Lim, Z Zhang, JH Ngai, DP Kumah
Journal of Vacuum Science & Technology A 40 (1), 2022
2022 Effect of buffer termination on intermixing and conductivity in LaTiO T Chen, K Ahmadi-Majlan, ZH Lim
2021 Functionalizing Semiconductor-Crystalline Oxide Heterostructures for Future Application in Energy Harvesting, Sensing, and Computing Technologies ZH Lim
The University of Texas at Arlington, 2019
2019 Direct Measurement of Band Edge Profiles at Epitaxial Oxide/Semiconductor Heterojunctions S Chambers, P Sushko, N Quackenbush, J Woicik, ZH Lim, M Chrysler, ...
APS March Meeting Abstracts 2019, S46. 013, 2019
2019 Charge Transfer and Built-in Electric Fields Between the Crystalline Oxide SrNbx Ti1-x O3-δ and Silicon ZH Lim, N Quackenbush, A Penn, M Chrysler, M Bowden, Z Zhu, J Ablett, ...
APS March Meeting Abstracts 2019, S46. 012, 2019
2019 Charge transfer and tunable built-in electric fields across semiconductor-crystalline oxide interfaces ZH Lim, NF Quackenbush, A Penn, M Chrysler, M Bowden, Z Zhu, ...
arXiv preprint arXiv:1810.04648, 2018
2018 Atomic layer control of metal-insulator behavior in oxide quantum wells integrated directly on silicon K Ahmadi-Majlan, TJ Chen, ZH Lim, P Conlin, R Hensley, D Su, H Chen, ...
arXiv preprint arXiv:1710.08597, 2017
2017 Thickness dependent metal-insulator transition of a correlated oxide heterostructure integrated directly on Si K Ahmadi Majlan, T Chen, R Hensley, P Conlin, Z Hui Lim, R Moghadam, ...
Bulletin of the American Physical Society 62, 2017
2017 Positron spectroscopy of 2D materials using an advanced high intensity positron beam A McDonald, V Chirayath, Z Lim, R Gladen, M Chrysler, A Fairchild, ...
APS March Meeting Abstracts 2016, C46. 003, 2016
2016 Modeling of the energy resolution of a 1 meter and a 3 meter time of flight positron annihilation induced Auger electron spectrometers A Fairchild, V Chirayath, R Gladen, A McDonald, Z Lim, M Chrysler, ...
APS March Meeting Abstracts 2016, G1. 315, 2016
2016