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Fabrice Oehler
Fabrice Oehler
CNRS researcher, Centre for Nanoscience and Nanotechnology (C2N, France)
Verified email at c2n.upsaclay.fr
Title
Cited by
Cited by
Year
Control of gold surface diffusion on Si nanowires
MI den Hertog, JL Rouviere, F Dhalluin, PJ Desré, P Gentile, P Ferret, ...
Nano letters 8 (5), 1544-1550, 2008
1302008
Epitaxy Of GaN Nanowires On Graphene
V Kumaresan, L Largeau, A Madouri, F Glas, H Zhang, F Oehler, ...
Nano Letters, 2016
1072016
Effect of HCl on the doping and shape control of silicon nanowires
P Gentile, A Solanki, N Pauc, F Oehler, B Salem, G Rosaz, T Baron, ...
Nanotechnology 23 (21), 215702, 2012
812012
Structural, electronic, and optical properties of m-plane InGaN/GaN quantum wells: Insights from experiment and atomistic theory
S Schulz, DP Tanner, EP O'Reilly, MA Caro, TL Martin, PAJ Bagot, ...
Physical Review B 92 (23), 235419, 2015
712015
Surface recombination velocity measurements of efficiently passivated gold-catalyzed silicon nanowires by a new optical method
O Demichel, V Calvo, A Besson, P Noé, B Salem, N Pauc, F Oehler, ...
Nano letters 10 (7), 2323-2329, 2010
642010
The effects of HCl on silicon nanowire growth: surface chlorination and existence of a'diffusion-limited minimum diameter'
F Oehler, P Gentile, T Baron, P Ferret
Nanotechnology 20 (47), 475307, 2009
622009
Sharpening the Interfaces of Axial Heterostructures in Self-Catalyzed AlGaAs Nanowires: Experiment and Theory
G Priante, F Glas, G Patriarche, K Pantzas, F Oehler, JC Harmand
Nano letters 16 (3), 1917-1924, 2016
612016
The importance of the radial growth in the faceting of silicon nanowires
F Oehler, P Gentile, T Baron, P Ferret, M Den Hertog, J Rouviere
Nano letters 10 (7), 2335-2341, 2010
612010
Abrupt GaP/GaAs Interfaces in Self-Catalyzed Nanowires
G Priante, G Patriarche, F Oehler, F Glas, JC Harmand
Nano letters 15 (9), 6036-6041, 2015
572015
Indium clustering in a-plane InGaN quantum wells as evidenced by atom probe tomography
F Tang, T Zhu, F Oehler, WY Fu, JT Griffiths, FCP Massabuau, ...
Applied Physics Letters 106 (7), 072104, 2015
562015
Interface dipole and band bending in the hybrid heterojunction
H Henck, ZB Aziza, O Zill, D Pierucci, CH Naylor, MG Silly, N Gogneau, ...
Physical Review B 96 (11), 115312, 2017
502017
The impact of trench defects in InGaN/GaN light emitting diodes and implications for the “green gap” problem
FCP Massabuau, MJ Davies, F Oehler, SK Pamenter, EJ Thrush, ...
Applied physics letters 105 (11), 112110, 2014
492014
Measuring and modeling the growth dynamics of self-catalyzed GaP nanowire arrays
F Oehler, A Cattoni, A Scaccabarozzi, G Patriarche, F Glas, JC Harmand
Nano letters 18 (2), 701-708, 2018
482018
Non-polar (11-20) InGaN quantum dots with short exciton lifetimes grown by metal-organic vapor phase epitaxy
T Zhu, F Oehler, BPL Reid, RM Emery, RA Taylor, MJ Kappers, RA Oliver
Applied Physics Letters 102, 251905, 2013
482013
Hidden defects in silicon nanowires
MI Den Hertog, C Cayron, P Gentile, F Dhalluin, F Oehler, T Baron, ...
Nanotechnology 23 (2), 025701, 2011
452011
Self-induced growth of vertical GaN nanowires on silica
V Kumaresan, L Largeau, F Oehler, H Zhang, O Mauguin, F Glas, ...
Nanotechnology 27 (13), 135602, 2016
402016
Structure and strain relaxation effects of defects in InxGa1− xN epilayers
SL Rhode, WY Fu, MA Moram, FCP Massabuau, MJ Kappers, ...
Journal of Applied Physics 116 (10), 103513, 2014
392014
Determination of n-Type Doping Level in Single GaAs Nanowires by Cathodoluminescence
HL Chen, C Himwas, A Scaccabarozzi, P Rale, F Oehler, A Lemaître, ...
Nano letters 17 (11), 6667-6675, 2017
372017
Surface morphology of homoepitaxial c-plane GaN: Hillocks and ridges
F Oehler, T Zhu, S Rhode, MJ Kappers, CJ Humphreys, RA Oliver
Journal of Crystal Growth 383, 12-18, 2013
352013
Recombination Dynamics of Spatially Confined Electron− Hole System in Luminescent Gold Catalyzed Silicon Nanowires
O Demichel, V Calvo, N Pauc, A Besson, P Noé, F Oehler, P Gentile, ...
Nano letters 9 (7), 2575-2578, 2009
342009
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