Predictive hot-carrier modeling of n-channel MOSFETs M Bina, S Tyaginov, J Franco, K Rupp, Y Wimmer, D Osintsev, B Kaczer, ... IEEE Transactions on Electron Devices 61 (9), 3103-3110, 2014 | 95 | 2014 |
Physical modeling of hot-carrier degradation for short-and long-channel MOSFETs S Tyaginov, M Bina, J Franco, D Osintsev, O Triebl, B Kaczer, T Grasser 2014 IEEE International Reliability Physics Symposium, XT. 16.1-XT. 16.8, 2014 | 44 | 2014 |
A predictive physical model for hot-carrier degradation in ultra-scaled MOSFETs S Tyaginov, M Bina, J Franco, Y Wimmer, D Osintsev, B Kaczer, T Grasser 2014 International Conference on Simulation of Semiconductor Processes and …, 2014 | 24 | 2014 |
Subband splitting and surface roughness induced spin relaxation in (0 0 1) silicon SOI MOSFETs D Osintsev, O Baumgartner, Z Stanojevic, V Sverdlov, S Selberherr Solid-state electronics 90, 34-38, 2013 | 21 | 2013 |
Reduction of momentum and spin relaxation rate in strained thin silicon films D Osintsev, V Sverdlov, S Selberherr 2013 Proceedings of the European Solid-State Device Research Conference …, 2013 | 13 | 2013 |
Electron mobility and spin lifetime enhancement in strained ultra-thin silicon films D Osintsev, V Sverdlov, S Selberherr Solid-State Electronics 112, 46-50, 2015 | 9 | 2015 |
Fast switching in magnetic tunnel junctions with double barrier layer A Makarov, V Sverdlov, D Osintsev, S Selberherr Proc. SSDM, 456-457, 2011 | 8 | 2011 |
Properties of silicon ballistic spin fin-based field-effect transistors D Osintsev, V Sverdlov, Z Stanojevic, A Makarov, J Weinbub, S Selberherr ECS Transactions 35 (5), 277, 2011 | 7 | 2011 |
(Late) Essential ingredients for modeling of hot-carrier degradation in ultra-scaled MOSFETs S Tyaginov, M Bina, J Franco, D Osintsev, Y Wimmer, B Kaczer, T Grasser 2013 IEEE International Integrated Reliability Workshop Final Report, 98-101, 2013 | 5 | 2013 |
Switching time and current reduction using a composite free layer in magnetic tunnel junctions A Makarov, V Sverdlov, D Osintsev, S Selberherr 2011 International Semiconductor Device Research Symposium (ISDRS), 1-2, 2011 | 5 | 2011 |
Increasing mobility and spin lifetime with shear strain in thin silicon films D Osintsev, V Sverdlov, T Windbacher, S Selberherr 2014 International Conference on Simulation of Semiconductor Processes and …, 2014 | 2 | 2014 |
Modeling silicon spintronics V Sverdlov, J Ghosh, D Osintsev, S Selberherr proc. in Recent Advances in Mathematical Methods in Applied Sciences, 195-198, 2014 | 2 | 2014 |
Reduction of the Surface Roughness Induced Spin Relaxation in SOI Structures: An Analytical Approach D Osintsev, V Sverdlov, S Selberherr Conference Proceedings of the Ninth Workshop of the Thematic Network on …, 2013 | 2 | 2013 |
Strain-induced reduction of surface roughness dominated spin relaxation in MOSFETs D Osintsev, Z Stanojevic, O Baumgartner, V Sverdlov, S Selberherr AIP Conference Proceedings 1566 (1), 317-318, 2013 | 1 | 2013 |
Spin lifetime enhancement by shear strain in thin silicon-on-insulator films D Osintsev, V Sverdlov, S Selberherr ECS Transactions 53 (5), 203, 2013 | 1 | 2013 |
Influence of the valley degeneracy on spin relaxation in thin silicon films D Osintsev, V Sverdlov, S Selberherr 2013 14th International Conference on Ultimate Integration on Silicon (ULIS …, 2013 | 1 | 2013 |
Current and Conductance Modulation at Elevated Temperature in Silicon and InAs-based Spin Field-Effect Transistors D OSInTSE, A vIKTOr SvErDlOv, S SElBErhErr Sains Malaysiana 42 (2), 205-211, 2013 | 1 | 2013 |
Transport properties of spin field-effect transistors built on Si and InAs D Osintsev, V Sverdlov, Z Stanojević, A Makarov, S Selberherr Ulis 2011 Ultimate Integration on Silicon, 1-4, 2011 | 1 | 2011 |
Micromagnetic modeling of penta-layer magnetic tunnel junctions with a composite soft layer A Makarov, V Sverdlov, D Osintsev, S Selberherr Proc. 2nd Advanced Workshop on Spin & Charge Properties of Low Dimensional …, 2011 | 1 | 2011 |
Silicon-on-insulator for spintronic applications: spin lifetime and electric spin manipulation V Sverdlov, D Osintsev, S Selberherr Physical Sciences Reviews 1 (5), 20160009, 2016 | | 2016 |