Fabrication and Analysis of a AM Walke, A Vandooren, R Rooyackers, D Leonelli, A Hikavyy, R Loo, ...
IEEE Transactions on Electron Devices 61 (3), 707-715, 2014
143 2014 A new complementary hetero-junction vertical tunnel-FET integration scheme R Rooyackers, A Vandooren, AS Verhulst, A Walke, K Devriendt, ...
2013 IEEE International Electron Devices Meeting, 4.2. 1-4.2. 4, 2013
60 2013 Part I: Impact of field-induced quantum confinement on the subthreshold swing behavior of line TFETs AM Walke, AS Verhulst, A Vandooren, D Verreck, E Simoen, VR Rao, ...
IEEE transactions on electron devices 60 (12), 4057-4064, 2013
60 2013 The impact of sequential-3D integration on semiconductor scaling roadmap A Mallik, A Vandooren, L Witters, A Walke, J Franco, Y Sherazi, P Weckx, ...
2017 IEEE International Electron Devices Meeting (IEDM), 32.1. 1-31.1. 4, 2017
55 2017 Ge-source vertical tunnel FETs using a novel replacement-source integration scheme R Rooyackers, A Vandooren, AS Verhulst, AM Walke, E Simoen, ...
IEEE transactions on electron devices 61 (12), 4032-4039, 2014
42 2014 First Demonstration of 3D stacked Finfets at a 45nm fin pitch and 110nm gate pitch technology on 300mm wafers A Vandooren, J Franco, Z Wu, B Parvais, W Li, L Witters, A Walke, L Peng, ...
2018 IEEE International Electron Devices Meeting (IEDM), 7.1. 1-7.1. 4, 2018
38 2018 3D sequential stacked planar devices on 300 mm wafers featuring replacement metal gate junction-less top devices processed at 525° C with improved reliability A Vandooren, J Franco, B Parvais, Z Wu, L Witters, A Walke, W Li, L Peng, ...
2018 IEEE Symposium on VLSI Technology, 69-70, 2018
28 2018 Investigation of the Subthreshold Swing in Vertical Tunnel-FETs Using A Vandooren, AM Walke, AS Verhulst, R Rooyackers, N Collaert, ...
IEEE Transactions on Electron Devices 61 (2), 359-364, 2014
28 2014 Part II: Investigation of subthreshold swing in line tunnel FETs using bias stress measurements AM Walke, A Vandooren, B Kaczer, AS Verhulst, R Rooyackers, E Simoen, ...
IEEE transactions on Electron Devices 60 (12), 4065-4072, 2013
24 2013 First demonstration of III-V HBTs on 300 mm Si substrates using nano-ridge engineering A Vais, L Witters, Y Mols, AS Hernandez, A Walke, H Yu, M Baryshnikova, ...
2019 IEEE International Electron Devices Meeting (IEDM), 9.1. 1-9.1. 4, 2019
23 2019 3-D sequential stacked planar devices featuring low-temperature replacement metal gate junctionless top devices with improved reliability A Vandooren, J Franco, B Parvais, Z Wu, L Witters, A Walke, W Li, L Peng, ...
IEEE Transactions on Electron Devices 65 (11), 5165-5171, 2018
23 2018 Electrical investigation of wake-up in high endurance fatigue-free La and Y doped HZO metal–ferroelectric–metal capacitors AM Walke, MI Popovici, K Banerjee, S Clima, P Kumbhare, J Desmet, ...
IEEE Transactions on Electron Devices 69 (8), 4744-4749, 2022
18 2022 High-endurance ferroelectric (La, Y) and (La, Gd) Co-doped hafnium zirconate grown by atomic layer deposition MI Popovici, AM Walke, J Bizindavyi, J Meersschaut, K Banerjee, ...
ACS Applied Electronic Materials 4 (4), 1823-1831, 2022
18 2022 Multi-threshold voltage field effect transistor and manufacturing method thereof AM Walke, CH Hsieh, CM Chu, YH Kuo
US Patent 9,837,416, 2017
18 2017 Sequential 3D: Key integration challenges and opportunities for advanced semiconductor scaling A Vandooren, L Witters, J Franco, A Mallik, B Parvais, Z Wu, A Walke, ...
2018 International Conference on IC Design & Technology (ICICDT), 145-148, 2018
17 2018 Ferroelectric La‐Doped ZrO2 /Hfx 1−x O2 Bilayer Stacks with Enhanced Endurance M Popovici, AM Walke, K Banerjee, N Ronchi, J Meersschaut, U Celano, ...
physica status solidi (RRL)–Rapid Research Letters 15 (5), 2100033, 2021
16 2021 Buried metal line compatible with 3D sequential integration for top tier planar devices dynamic Vth tuning and RF shielding applications A Vandooren, Z Wu, A Khaled, J Franco, B Parvais, W Li, L Witters, ...
2019 Symposium on VLSI Technology, T56-T57, 2019
15 2019 Impact of Charge Trapping and Depolarization on Data Retention Using Simultaneous P –V and I –V in HfO₂-Based Ferroelectric FET Y Higashi, N Ronchi, B Kaczer, MNK Alam, BJ O’Sullivan, K Banerjee, ...
IEEE Transactions on Electron Devices 68 (9), 4391-4396, 2021
12 2021 Semiconductor technologies for next generation mobile communications N Collaert, A Alian, SH Chen, V Deshpande, M Ingels, V Putcha, ...
2018 14th IEEE International Conference on Solid-State and Integrated …, 2018
11 2018 From 5G to 6G: Will compound semiconductors make the difference? N Collaert, A Alian, A Banerjee, V Chauhan, RY ElKashlan, B Hsu, ...
2020 IEEE 15th International Conference on Solid-State & Integrated Circuit …, 2020
10 2020 