T. D. Lin
Titre
Citée par
Citée par
Année
Energy-band parameters of atomic-layer-deposition AlO∕ InGaAs heterostructure
ML Huang, YC Chang, CH Chang, TD Lin, J Kwo, TB Wu, M Hong
Applied physics letters 89, 012903, 2006
1962006
High-performance self-aligned inversion-channel metal-oxide-semiconductor field-effect-transistor with as gate dielectrics
TD Lin, HC Chiu, P Chang, LT Tung, CP Chen, M Hong, J Kwo, W Tsai, ...
Applied Physics Letters 93 (3), 033516, 2008
1662008
High-performance self-aligned inversion-channel In0. 53Ga0. 47As metal-oxide-semiconductor field-effect-transistor with Al2O3∕ Ga2O3 (Gd2O3) as gate dielectrics
TD Lin, HC Chiu, P Chang, LT Tung, CP Chen, M Hong, J Kwo, W Tsai, ...
Applied Physics Letters 93 (3), 033516, 2008
1652008
Interfacial self-cleaning in atomic layer deposition of HfO gate dielectric on InGaAs
CH Chang, YK Chiou, YC Chang, KY Lee, TD Lin, TB Wu, M Hong, J Kwo
Applied physics letters 89, 242911, 2006
1572006
Interfacial self-cleaning in atomic layer deposition of< equation>< font face='verdana'> Hf</font>< font face='verdana'> O</font>< sub> 2</sub></equation> gate dielectric on …
CH Chang, YK Chiou, YC Chang, KY Lee, TD Lin, TB Wu, M Hong, J Kwo
Applied Physics Letters 89 (24), 242911-242911-3, 2006
157*2006
Atomic-layer-deposited HfO on InGaAs: Passivation and energy-band parameters
YC Chang, ML Huang, KY Lee, YJ Lee, TD Lin, M Hong, J Kwo, TS Lay, ...
Applied Physics Letters 92, 072901, 2008
130*2008
Energy-band parameters of atomic layer deposited< equation>< font face='verdana'> Al</font>< sub> 2</sub>< font face='verdana'> O</font>< sub> 3</sub></equation> and< equation …
ML Huang, YC Chang, YH Chang, TD Lin, J Kwo, M Hong
Applied Physics Letters 94 (5), 052106-052106-3, 2009
802009
Energy-band parameters of atomic layer deposited Al2O3 and HfO2 on InxGa1− xAs
ML Huang, YC Chang, YH Chang, TD Lin, J Kwo, M Hong
Applied Physics Letters 94 (5), 052106-052106-3, 2009
78*2009
Realization of high-quality HfO< inf> 2</inf> on In< inf> 0.53</inf> Ga< inf> 0.47</inf> As by in-situ atomic-layer-deposition
TD Lin, YH Chang, CA Lin, ML Huang, WC Lee, J Kwo, M Hong
Applied Physics Letters 100 (17), 172110-172110-4, 2012
51*2012
Self-aligned inversion-channel In< sub> 0.75</sub> Ga< sub> 0.25</sub> As metal–oxide–semiconductor field-effect-transistors using UHV-Al< sub> 2</sub> O< sub> 3</sub>/Ga< sub …
TD Lin, HC Chiu, P Chang, YH Chang, YD Wu, M Hong, J Kwo
Solid-State Electronics 54 (9), 919-924, 2010
48*2010
InGaAs Metal Oxide Semiconductor Devices with Ga2O3 (Gd2O3) High-κ Dielectrics for Science and Technology beyond Si CMOS
M Hong, J Kwo, TD Lin, ML Huang
MRS bulletin 34 (07), 514-521, 2009
382009
GaO (GdO) on Ge without interfacial layers: Energy-band parameters and metal oxide semiconductor devices
LK Chu, TD Lin, ML Huang, RL Chu, CC Chang, J Kwo, M Hong
Applied Physics Letters 94, 202108, 2009
322009
< equation>< font face='verdana'> Ga</font>< sub> 2</sub>< font face='verdana'> O</font>< sub> 3</sub>(< font face='verdana'> Gd</font>< sub> 2</sub>< font face='verdana'> O …
LK Chu, TD Lin, ML Huang, RL Chu, CC Chang, J Kwo, M Hong
Applied Physics Letters 94 (20), 202108-202108-3, 2009
32*2009
Attainment of low interfacial trap density absent of a large midgap peak in In0. 2Ga0. 8As by Ga2O3 (Gd2O3) passivation
CA Lin, HC Chiu, TH Chiang, TD Lin, YH Chang, WH Chang, YC Chang, ...
Applied Physics Letters 98, 062108, 2011
302011
Attainment of low interfacial trap density absent of a large midgap peak in< equation>< font face='verdana'> In</font>< sub> 0.2</sub>< font face='verdana'> Ga</font>< sub> 0.8 …
CA Lin, HC Chiu, TH Chiang, TD Lin, YH Chang, WH Chang, YC Chang, ...
Applied Physics Letters 98 (6), 062108-062108-3, 2011
30*2011
Effective passivation of In< inf> 0.2</inf> Ga< inf> 0.8</inf> As by HfO< inf> 2</inf> surpassing Al< inf> 2</inf> O< inf> 3</inf> via in-situ atomic layer deposition
YH Chang, CA Lin, YT Liu, TH Chiang, HY Lin, ML Huang, TD Lin, TW Pi, ...
Applied Physics Letters 101 (17), 172104-172104-5, 2012
29*2012
GaO (GdO)∕ SiN dual-layer gate dielectric for InGaAs enhancement mode metal-oxide-semiconductor field-effect transistor with channel inversion
JF Zheng, W Tsai, TD Lin, YJ Lee, CP Chen, M Hong, J Kwo, S Cui, ...
Applied Physics Letters 91, 223502, 2007
272007
< equation>< font face='verdana'> Ga</font>< sub> 2</sub>< font face='verdana'> O</font>< sub> 3</sub>(< font face='verdana'> Gd</font>< sub> 2</sub>< font face='verdana'> O …
JF Zheng, W Tsai, TD Lin, YJ Lee, CP Chen, M Hong, J Kwo, S Cui, ...
Applied Physics Letters 91 (22), 223502-223502-3, 2007
27*2007
Ga [sub 2] O [sub 3](Gd [sub 2] O [sub 3])/Si [sub 3] N [sub 4] dual-layer gate dielectric for InGaAs enhancement mode metal-oxide-semiconductor field-effect transistor with …
JF Zheng, W Tsai, TD Lin, YJ Lee, CP Chen, M Hong, J Kwo, S Cui, ...
Appl. Phys. Lett 91, 223502, 2007
27*2007
High-performance self-aligned inversion-channel In0. 53Ga0. 47As metal-oxide-semiconductor field-effect-transistors by in-situ atomic-layer-deposited HfO2
TD Lin, WH Chang, RL Chu, YC Chang, YH Chang, MY Lee, PF Hong, ...
Applied Physics Letters 103 (25), 253509, 2013
242013
Le système ne peut pas réaliser cette opération maintenant. Veuillez réessayer plus tard.
Articles 1–20