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Hirokazu Fukidome
Hirokazu Fukidome
電子工学、表面科学、電気化学
Verified email at riec.tohoku.ac.jp
Title
Cited by
Cited by
Year
Graphene-based devices in terahertz science and technology
T Otsuji, SAB Tombet, A Satou, H Fukidome, M Suemitsu, E Sano, ...
Journal of Physics D: Applied Physics 45 (30), 303001, 2012
2432012
Epitaxial graphene on silicon substrates
M Suemitsu, H Fukidome
Journal of Physics D: Applied Physics 43 (37), 374012, 2010
1442010
A very simple method of flattening Si (111) surface at an atomic level using oxygen-free water
H Fukidome, M Matsumura
Japanese journal of applied physics 38 (10A), L1085, 1999
101*1999
Adsorption of CO2 on Graphene: A Combined TPD, XPS, and vdW-DF Study
K Takeuchi, S Yamamoto, Y Hamamoto, Y Shiozawa, K Tashima, ...
The Journal of Physical Chemistry C 121 (5), 2807-2814, 2017
932017
Epitaxial growth processes of graphene on silicon substrates
H Fukidome, Y Miyamoto, H Handa, E Saito, M Suemitsu
Japanese Journal of Applied Physics 49 (1S), 01AH03, 2010
772010
In-situ ftir studies of reactions at the silicon/liquid interface: Wet chemical etching of ultrathin sio2 on si (100)
KT Queeney, H Fukidome, EE Chaban, YJ Chabal
The Journal of Physical Chemistry B 105 (18), 3903-3907, 2001
582001
Epitaxial graphene formation on 3C-SiC/Si thin films
M Suemitsu, S Jiao, H Fukidome, Y Tateno, I Makabe, T Nakabayashi
Journal of Physics D: Applied Physics 47 (9), 094016, 2014
572014
Controls over structural and electronic properties of epitaxial graphene on silicon using surface termination of 3C-SiC (111)/Si
H Fukidome, S Abe, R Takahashi, K Imaizumi, S Inomata, H Handa, ...
Applied physics express 4 (11), 115104, 2011
572011
Observation of amplified stimulated terahertz emission from optically pumped heteroepitaxial graphene-on-silicon materials
H Karasawa, T Komori, T Watanabe, A Satou, H Fukidome, M Suemitsu, ...
Journal of Infrared, Millimeter, and Terahertz Waves 32, 655-665, 2011
572011
Low-energy-electron-diffraction and X-ray-phototelectron-spectroscopy studies of graphitization of 3C-SiC (111) thin film on Si (111) substrate
R Takahashi, H Handa, S Abe, K Imaizumi, H Fukidome, A Yoshigoe, ...
Japanese Journal of Applied Physics 50 (7R), 070103, 2011
532011
Precise control of epitaxy of graphene by microfabricating SiC substrate
H Fukidome, Y Kawai, F Fromm, M Kotsugi, H Handa, T Ide, T Ohkouchi, ...
Applied Physics Letters 101 (4), 2012
512012
Electrochemical study of atomically flattening process of silicon surface in 40% NH4F solution
H Fukidome, M Matsumura
Applied surface science 130, 146-150, 1998
511998
Control of epitaxy of graphene by crystallographic orientation of a Si substrate toward device applications
H Fukidome, R Takahashi, S Abe, K Imaizumi, H Handa, HC Kang, ...
Journal of Materials Chemistry 21 (43), 17242-17248, 2011
502011
Raman-scattering spectroscopy of epitaxial graphene formed on SiC film on Si substrate
Y Miyamoto, H Handa, E Saito, A Konno, Y Narita, M Suemitsu, ...
e-Journal of Surface Science and Nanotechnology 7, 107-109, 2009
492009
Graphene materials and devices in terahertz science and technology
T Otsuji, SAB Tombet, A Satou, H Fukidome, M Suemitsu, E Sano, ...
MRS bulletin 37 (12), 1235-1243, 2012
462012
Room temperature logic inverter on epitaxial graphene-on-silicon device
A El Moutaouakil, HC Kang, H Handa, H Fukidome, T Suemitsu, E Sano, ...
Japanese journal of applied physics 50 (7R), 070113, 2011
412011
Direct observation of charge transfer region at interfaces in graphene devices
N Nagamura, K Horiba, S Toyoda, S Kurosumi, T Shinohara, M Oshima, ...
Applied Physics Letters 102 (24), 2013
402013
Suppression of supercollision carrier cooling in high mobility graphene on SiC()
T Someya, H Fukidome, H Watanabe, T Yamamoto, M Okada, H Suzuki, ...
Physical Review B 95 (16), 165303, 2017
362017
Interfacial charge states in graphene on SiC studied by noncontact scanning nonlinear dielectric potentiometry
K Yamasue, H Fukidome, K Funakubo, M Suemitsu, Y Cho
Physical Review Letters 114 (22), 226103, 2015
352015
Orbital-specific tunability of many-body effects in bilayer graphene by gate bias and metal contact
H Fukidome, M Kotsugi, K Nagashio, R Sato, T Ohkochi, T Itoh, A Toriumi, ...
Scientific reports 4 (1), 3713, 2014
352014
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