| Existence of Resistive Switching Memory and Negative Differential Resistance State in Self-Colored MoS2/ZnO Heterojunction Devices MS Kadhim, F Yang, B Sun, W Hou, H Peng, Y Hou, Y Jia, L Yuan, Y Yu, ... ACS Applied Electronic Materials 1 (3), 318-324, 2019 | 58 | 2019 |
| A resistive switching memory device with a negative differential resistance at room temperature MS Kadhim, F Yang, B Sun, Y Wang, T Guo, Y Jia, L Yuan, Y Yu, Y Zhao Applied Physics Letters 113 (5), 2018 | 45 | 2018 |
| Effect of anodic oxidation time on resistive switching memory behavior based on amorphous TiO2 thin films device Y Yu, F Yang, S Mao, S Zhu, Y Jia, L Yuan, M Salmen, B Sun Chemical Physics Letters 706, 477-482, 2018 | 38 | 2018 |
| An excellent resistive switching memory behaviour based on assembled MoSe2 nanosphere arrays S Mao, H Elshekh, MS Kadhim, Y Xia, G Fu, W Hou, Y Zhao, B Sun Journal of Solid State Chemistry 279, 120975, 2019 | 11 | 2019 |
| Effect of crystalline state on conductive filaments forming process in resistive switching memory devices T Guo, H Elshekh, Z Yu, B Yu, D Wang, MS Kadhim, Y Chen, W Hou, ... Materials Today Communications 20, 100540, 2019 | 11 | 2019 |
| Ion reaction tunable ON/OFF ratio of vertically oriented Zn-Al layered-double-hydroxide nanosheets based memristor F Yang, MS Kadhim, M Babiker, H Elshekh, W Hou, G Huang, Y Zhang, ... Materials Today Communications 20, 100573, 2019 | 9 | 2019 |
| 2019.“ X He, R Tang, F Yang, MS Kadhim, JX Wang, Y Pu, D Wang Zirconia quantum dots for nonvolatile resistive random access memory device …, 0 | 9 | |
| Zirconia quantum dots for a nonvolatile resistive random access memory device X He, R Tang, F Yang, MS Kadhim, J Wang, Y Pu, D Wang Frontiers of Information Technology & Electronic Engineering 20 (12), 1698-1705, 2019 | 7 | 2019 |
| A facile room-temperature synthesis of three-dimensional coral-like Ag2S nanostructure with enhanced photocatalytic activity L Yuan, S Lu, F Yang, Y Wang, Y Jia, MS Kadhim, Y Yu, Y Zhang, Y Zhao Journal of materials science 54, 3174-3186, 2019 | 7 | 2019 |
| Application of a flexible memristor in self-color electronics and its depth mechanism analysis F Yang, Y Yu, Q Wang, MS Kadhim, D Wang, D Xie, L Yuan, Y Zhao, X He, ... Ceramics International 49 (13), 22460-22470, 2023 | 3 | 2023 |
| Fabrication and Investigation of Nanostructured Monolayer Porous Silicon (PSi) Based for Silicon Solar Cell Applications SAM Salih Al-Nahrain Journal for Engineering Sciences 18 (2), 309-314, 2015 | 1 | 2015 |
| Ion reaction tunable ON/OFF ratio of vertically oriented Zn-Al layered F Yang, MS Kadhim, M Babiker, H Elshekh, W Hou, G Huang, Y Zhang, ... | | 2019 |
| 氧化锆量子点用于非易失性电阻式随机存取存储器 X He, R Tang, F Yang, MS Kadhim, J Wang, Y Pu, D Wang, AX He, ... Frontiers 20 (12), 1698-1705, 2019 | | 2019 |
| 氧化锆量子点用于非易失性电阻式随机存取存储器 (英文) X HE, R TANG, F YANG, MS KADHIM, J WANG, Y PU, D WANG Frontiers 12, 2019 | | 2019 |
