| Understanding the selective area growth of GaN nanocolumns by MBE using Ti nanomasks A Bengoechea-Encabo, F Barbagini, S Fernandez-Garrido, J Grandal, ... Journal of Crystal Growth 325 (1), 89-92, 2011 | 127 | 2011 |
| Accommodation mechanism of InN nanocolumns grown on Si (111) substrates by molecular beam epitaxy J Grandal, MA Sánchez-García, E Calleja, E Luna, A Trampert Applied physics letters 91 (2), 2007 | 88 | 2007 |
| Formation and phase transformation of Bi-containing QD-like clusters in annealed GaAsBi M Wu, E Luna, J Puustinen, M Guina, A Trampert Nanotechnology 25 (20), 205605, 2014 | 76 | 2014 |
| Evaluation of antimony segregation in InAs/InAs1− xSbx type-II superlattices grown by molecular beam epitaxy J Lu, E Luna, T Aoki, EH Steenbergen, YH Zhang, DJ Smith Journal of Applied Physics 119 (9), 2016 | 72 | 2016 |
| Variation of lattice constant and cluster formation in GaAsBi J Puustinen, M Wu, E Luna, A Schramm, P Laukkanen, M Laitinen, ... Journal of Applied Physics 114 (24), 2013 | 68 | 2013 |
| Phonon-plasmon coupling in electron surface accumulation layers in InN nanocolumns S Lazić, E Gallardo, JM Calleja, F Agulló-Rueda, J Grandal, ... Physical Review B—Condensed Matter and Materials Physics 76 (20), 205319, 2007 | 60 | 2007 |
| Interfacial intermixing in InAs/GaSb short-period-superlattices grown by molecular beam epitaxy E Luna, B Satpati, JB Rodriguez, AN Baranov, E Tournié, A Trampert Applied Physics Letters 96 (2), 2010 | 59 | 2010 |
| Coexistence of quantum-confined Stark effect and localized states in an (In, Ga) N/GaN nanowire heterostructure J Lähnemann, O Brandt, C Pfüller, T Flissikowski, U Jahn, E Luna, ... Physical Review B—Condensed Matter and Materials Physics 84 (15), 155303, 2011 | 58 | 2011 |
| Statistical analysis of the shape of one-dimensional nanostructures: determining the coalescence degree of spontaneously formed GaN nanowires O Brandt, S Fernández-Garrido, JK Zettler, E Luna, U Jahn, C Chèze, ... Crystal growth & design 14 (5), 2246-2253, 2014 | 55 | 2014 |
| GaSbBi/GaSb quantum well laser diodes O Delorme, L Cerutti, E Luna, G Narcy, A Trampert, E Tournié, ... Applied Physics Letters 110 (22), 2017 | 51 | 2017 |
| GaAsBi/GaAs multi-quantum well LED grown by molecular beam epitaxy using a two-substrate-temperature technique PK Patil, E Luna, T Matsuda, K Yamada, K Kamiya, F Ishikawa, ... Nanotechnology 28 (10), 105702, 2017 | 51 | 2017 |
| Observation of dielectrically confined excitons in ultrathin GaN nanowires up to room temperature JK Zettler, P Corfdir, C Hauswald, E Luna, U Jahn, T Flissikowski, ... Nano letters 16 (2), 973-980, 2016 | 50 | 2016 |
| Critical Role of Two-Dimensional Island-Mediated Growth on the Formation<? format?> of Semiconductor Heterointerfaces E Luna, Á Guzmán, A Trampert, G Álvarez Physical review letters 109 (12), 126101, 2012 | 49 | 2012 |
| Observation of atomic ordering of triple-period-A and-B type in GaAsBi M Wu, E Luna, J Puustinen, M Guina, A Trampert Applied Physics Letters 105 (4), 2014 | 45 | 2014 |
| Type-II band alignment of zinc-blende and wurtzite segments in GaAs nanowires: A combined photoluminescence and resonant Raman scattering study P Kusch, E Grelich, C Somaschini, E Luna, M Ramsteiner, L Geelhaar, ... Physical review B 89 (4), 045310, 2014 | 45 | 2014 |
| Dilute nitride based double-barrier quantum-well infrared photodetector operating in the near infrared E Luna, M Hopkinson, JM Ulloa, A Guzman, E Munoz Applied physics letters 83 (15), 3111-3113, 2003 | 43 | 2003 |
| Spontaneous formation of three-dimensionally ordered Bi-rich nanostructures within GaAs1− xBix/GaAs quantum wells E Luna, M Wu, M Hanke, J Puustinen, M Guina, A Trampert Nanotechnology 27 (32), 325603, 2016 | 37 | 2016 |
| Spontaneous formation of nanostructures by surface spinodal decomposition in GaAs1− xBix epilayers E Luna, M Wu, J Puustinen, M Guina, A Trampert Journal of Applied Physics 117 (18), 2015 | 37 | 2015 |
| Te-doping of self-catalyzed GaAs nanowires S Suomalainen, TV Hakkarainen, T Salminen, R Koskinen, M Honkanen, ... Applied Physics Letters 107 (1), 2015 | 35 | 2015 |
| Ga predeposition for the Ga-assisted growth of GaAs nanowire ensembles with low number density and homogeneous length H Küpers, F Bastiman, E Luna, C Somaschini, L Geelhaar Journal of Crystal Growth 459, 43-49, 2017 | 34 | 2017 |
