Tokuyuki TERAJI

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Fedor JelezkoUlm UniversityAdresse e-mail validée de uni-ulm.de
Yasuo KoideNational Institute for Materials Science (NIMS)Adresse e-mail validée de nims.go.jp
Boris NaydenovSenior scientist, Helmholtz Zentrum BerlinAdresse e-mail validée de helmholtz-berlin.de
Liam P McGuinnessUlm UniversityAdresse e-mail validée de uni-ulm.de
Lachlan RogersUniversity of Newcastle, Newcastle, AustraliaAdresse e-mail validée de newcastle.edu.au
Julien PERNOTUniv. Grenoble Alpes - Institut Néel - CNRSAdresse e-mail validée de neel.cnrs.fr
Jean-Philippe TetienneRMIT UniversityAdresse e-mail validée de rmit.edu.au
Etienne GheeraertInstitut Néel, University of Grenoble AlpesAdresse e-mail validée de neel.cnrs.fr
Ken HAENENHasselt University & imecAdresse e-mail validée de uhasselt.be
FIORI Alexandre Jean-YvesNational Institute for Materials Science, 1-1 Namiki, Tsukuba, Ibaraki, 305-0044, JapanAdresse e-mail validée de nims.go.jp
Takashi YamamotoQuTech, Delft University of TechnologyAdresse e-mail validée de tudelft.nl
Jörg WrachtrupProfessor of Physics, Stuttgart University and Max Planck Institute for Solid State ResearchAdresse e-mail validée de physik.uni-stuttgart.de
Alastair StaceyRMIT University & Princeton Plasma Physics LaboratoryAdresse e-mail validée de rmit.edu.au
Meiyong LiaoNational Institute for Materials ScienceAdresse e-mail validée de nims.go.jp
T.TaniguchiNational Institute for Materials ScienceAdresse e-mail validée de nims.go.jp
Christoph MüllerNVision Imaging Technologies GmbHAdresse e-mail validée de uni-ulm.de
Marcus William DohertyLaser Physics Centre, Research School of Physics and Engineering, Australian National UniversityAdresse e-mail validée de anu.edu.au
Philipp NeumannUniversity of StuttgartAdresse e-mail validée de physik.uni-stuttgart.de
Vincent MortetInstitute of Physics, AS CR v.v.i.Adresse e-mail validée de fzu.cz
Florian DoldeQuantum Engineer, Robert Bosch GmbHAdresse e-mail validée de de.bosch.com

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Tokuyuki TERAJI

National Institute for Materials Science

Adresse e-mail validée de nims.go.jp

diamond doping CVD


Titre Trier par citations Trier par année Trier par titre	Citée par Citée par	Année
Indistinguishable photons from separated silicon-vacancy centers in diamond A Sipahigil, KD Jahnke, LJ Rogers, T Teraji, J Isoya, AS Zibrov, F Jelezko, ... Physical review letters 113 (11), 113602, 2014	544	2014
Multiple intrinsically identical single-photon emitters in the solid state LJ Rogers, KD Jahnke, T Teraji, L Marseglia, C Müller, B Naydenov, ... Nature communications 5 (1), 4739, 2014	355	2014
All-optical initialization, readout, and coherent preparation of single silicon-vacancy spins in diamond LJ Rogers, KD Jahnke, MH Metsch, A Sipahigil, JM Binder, T Teraji, ... Physical review letters 113 (26), 263602, 2014	352	2014
Experimental implementation of assisted quantum adiabatic passage in a single spin J Zhang, JH Shim, I Niemeyer, T Taniguchi, T Teraji, H Abe, S Onoda, ... Physical review letters 110 (24), 240501, 2013	284	2013
Detecting and polarizing nuclear spins with double resonance on a single electron spin P London, J Scheuer, JM Cai, I Schwarz, A Retzker, MB Plenio, M Katagiri, ... Physical review letters 111 (6), 067601, 2013	275	2013
Phosphorus-doped chemical vapor deposition of diamond S Koizumi, T Teraji, H Kanda Diamond and Related Materials 9 (3-6), 935-940, 2000	266	2000
Electronic structure of the negatively charged silicon-vacancy center in diamond LJ Rogers, KD Jahnke, MW Doherty, A Dietrich, LP McGuinness, C Müller, ... Physical Review B 89 (23), 235101, 2014	256	2014
Extending spin coherence times of diamond qubits by high-temperature annealing T Yamamoto, T Umeda, K Watanabe, S Onoda, ML Markham, ... Physical Review B—Condensed Matter and Materials Physics 88 (7), 075206, 2013	237	2013
Perfect alignment and preferential orientation of nitrogen-vacancy centers during chemical vapor deposition diamond growth on (111) surfaces J Michl, T Teraji, S Zaiser, I Jakobi, G Waldherr, F Dolde, P Neumann, ... Applied Physics Letters 104 (10), 2014	214	2014
Photoelectrical imaging and coherent spin-state readout of single nitrogen-vacancy centers in diamond P Siyushev, M Nesladek, E Bourgeois, M Gulka, J Hruby, T Yamamoto, ... Science 363 (6428), 728-731, 2019	188	2019
Hall hole mobility in boron-doped homoepitaxial diamond J Pernot, PN Volpe, F Omnès, P Muret, V Mortet, K Haenen, T Teraji Physical Review B—Condensed Matter and Materials Physics 81 (20), 205203, 2010	187	2010
Extreme dielectric strength in boron doped homoepitaxial diamond PN Volpe, P Muret, J Pernot, F Omnès, T Teraji, Y Koide, F Jomard, ... Applied Physics Letters 97 (22), 2010	165	2010
Photoluminescence excitation spectroscopy of SiV− and GeV− color center in diamond S Häußler, G Thiering, A Dietrich, N Waasem, T Teraji, J Isoya, T Iwasaki, ... New Journal of Physics 19 (6), 063036, 2017	131	2017
Protecting a diamond quantum memory by charge state control M Pfender, N Aslam, P Simon, D Antonov, G Thiering, S Burk, ... Nano letters 17 (10), 5931-5937, 2017	124	2017
Competition between electric field and magnetic field noise in the decoherence of a single spin in diamond P Jamonneau, M Lesik, JP Tetienne, I Alvizu, L Mayer, A Dréau, S Kosen, ... Physical Review B 93 (2), 024305, 2016	123	2016
Isotopically varying spectral features of silicon-vacancy in diamond A Dietrich, KD Jahnke, JM Binder, T Teraji, J Isoya, LJ Rogers, F Jelezko New Journal of Physics 16 (11), 113019, 2014	122	2014
Comprehensive investigation of single crystal diamond deep-ultraviolet detectors M Liao, L Sang, T Teraji, M Imura, J Alvarez, Y Koide Japanese Journal of Applied Physics 51 (9R), 090115, 2012	116	2012
Spin properties of dense near-surface ensembles of nitrogen-vacancy centers in diamond JP Tetienne, RW De Gille, DA Broadway, T Teraji, SE Lillie, JM McCoey, ... Physical Review B 97 (8), 085402, 2018	115	2018
Appearance of n-type semiconducting properties of cBN single crystals grown at high pressure T Taniguchi, T Teraji, S Koizumi, K Watanabe, S Yamaoka Japanese journal of applied physics 41 (2A), L109, 2002	109	2002
Array of bright silicon-vacancy centers in diamond fabricated by low-energy focused ion beam implantation S Tamura, G Koike, A Komatsubara, T Teraji, S Onoda, LP McGuinness, ... Applied Physics Express 7 (11), 115201, 2014	107	2014

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