Martin Chicoine
Martin Chicoine
Adresse e-mail validée de
Citée par
Citée par
High resolution radial distribution function of pure amorphous silicon
K Laaziri, S Kycia, S Roorda, M Chicoine, JL Robertson, J Wang, ...
Physical review letters 82 (17), 3460, 1999
High-energy x-ray diffraction study of pure amorphous silicon
K Laaziri, S Kycia, S Roorda, M Chicoine, JL Robertson, J Wang, ...
Physical Review B 60 (19), 13520, 1999
On the nanostructure of pure amorphous silicon
DL Williamson, S Roorda, M Chicoine, R Tabti, PA Stolk, S Acco, ...
Applied Physics Letters 67 (2), 226-228, 1995
Bandgap and optical absorption edge of GaAs1− xBix alloys with 0< x< 17.8%
M Masnadi-Shirazi, RB Lewis, V Bahrami-Yekta, T Tiedje, M Chicoine, ...
Journal of Applied Physics 116 (22), 2014
Directional mass transport by momentum transfer from ion beam to solid
L Cliche, S Roorda, M Chicoine, RA Masut
Physical review letters 75 (12), 2348, 1995
Microstructural evolution in H ion induced splitting of freestanding GaN
O Moutanabbir, R Scholz, S Senz, U Gösele, M Chicoine, F Schiettekatte, ...
Applied Physics Letters 93 (3), 2008
Lifetime of (4.03 MeV)
R Kanungo, TK Alexander, AN Andreyev, GC Ball, RS Chakrawarthy, ...
Physical Review C 74 (4), 045803, 2006
Lifetimes of states in above the breakup threshold
S Mythili, B Davids, TK Alexander, GC Ball, M Chicoine, RS Chakrawarthy, ...
Physical Review C 77 (3), 035803, 2008
Directional effects during ion implantation: lateral mass transport and anisotropic growth
M Chicoine, S Roorda, L Cliche, RA Masut
Physical Review B 56 (3), 1551, 1997
Low Mechanical Loss Coatings for Reduced Thermal Noise in Gravitational Wave Interferometers
G Vajente, L Yang, A Davenport, M Fazio, A Ananyeva, L Zhang, ...
Physical Review Letters 127 (7), 071101, 2021
Fabrication of high resistivity cold-implanted InGaAsP photoconductors for efficient pulsed terahertz devices
A Fekecs, M Bernier, D Morris, M Chicoine, F Schiettekatte, P Charette, ...
Optical Materials Express 1 (7), 1165-1177, 2011
Influence of isotopic substitution and He coimplantation on defect complexes and voids induced by H ions in silicon
O Moutanabbir, B Terreault, M Chicoine, F Schiettekatte, PJ Simpson
Physical Review B 75 (7), 075201, 2007
Damage evolution in low-energy ion implanted silicon
R Karmouch, Y Anahory, JF Mercure, D Bouilly, M Chicoine, G Bentoumi, ...
Physical Review B 75 (7), 075304, 2007
The fluence effect in hydrogen-ion cleaving of silicon at the sub-100-nm scale
O Moutanabbir, B Terreault, M Chicoine, F Schiettekatte
Applied Physics A 80, 1455-1462, 2005
Ion beam characterization of GaAs1− x− yNxBiy epitaxial layers
P Wei, S Tixier, M Chicoine, S Francoeur, A Mascarenhas, T Tiedje, ...
Nuclear Instruments and Methods in Physics Research Section B: Beam …, 2004
Terahertz emission properties of arsenic and oxygen ion-implanted GaAs based photoconductive pulsed sources
B Salem, D Morris, Y Salissou, V Aimez, S Charlebois, M Chicoine, ...
Journal of Vacuum Science & Technology A 24 (3), 774-777, 2006
Disentangling neighbors and extended range density oscillations in monatomic amorphous semiconductors
S Roorda, C Martin, M Droui, M Chicoine, A Kazimirov, S Kycia
Physical Review Letters 108 (25), 255501, 2012
The effect of size and depth profile of Si-nc imbedded in a SiO2 layer on the photoluminescence spectra
R Smirani, F Martin, G Abel, YQ Wang, M Chicoine, GG Ross
Journal of luminescence 115 (1-2), 62-68, 2005
Mechanisms of ion-induced GaN thin layer splitting
O Moutanabbir, YJ Chabal, M Chicoine, S Christiansen, ...
Nuclear Instruments and Methods in Physics Research Section B: Beam …, 2009
Organometallic vapor phase epitaxy of alloy layers on GaAs(001): Nitrogen incorporation and lattice parameter variation
JN Beaudry, RA Masut, P Desjardins, P Wei, M Chicoine, G Bentoumi, ...
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 22 (3 …, 2004
Le système ne peut pas réaliser cette opération maintenant. Veuillez réessayer plus tard.
Articles 1–20