Determination of electron effective mass and electron affinity in HfO2 using MOS and MOSFET structures S Monaghan, PK Hurley, K Cherkaoui, MA Negara, A Schenk Solid-State Electronics 53 (4), 438-444, 2009 | 155 | 2009 |
Electrical, structural, and chemical properties of HfO2 films formed by electron beam evaporation K Cherkaoui, S Monaghan, MA Negara, M Modreanu, PK Hurley, ... Journal of Applied Physics 104 (6), 2008 | 83 | 2008 |
Impact of H< sub> 2</sub>/N< sub> 2</sub> annealing on interface defect densities in Si (100)/SiO< sub> 2</sub>/HfO< sub> 2</sub>/TiN gate stacks M Schmidt, MC Lemme, H Kurz, T Witters, T Schram, K Cherkaoui, ... Microelectronic engineering 80, 70-73, 2005 | 50* | 2005 |
Interface Trap Density Reduction for Al2O3/GaN (0001) Interfaces by Oxidizing Surface Preparation prior to Atomic Layer Deposition DM Zhernokletov, MA Negara, RD Long, S Aloni, D Nordlund, ... ACS applied materials & interfaces 7 (23), 12774-12780, 2015 | 46 | 2015 |
Analysis of electron mobility in HfO2/TiN gate metal-oxide-semiconductor field effect transistors: The influence of HfO2 thickness, temperature, and oxide charge MA Negara, K Cherkaoui, PK Hurley, CD Young, P Majhi, W Tsai, ... Journal of Applied Physics 105 (2), 2009 | 36 | 2009 |
Oxide Charge Engineering of Atomic Layer Deposited AlOxNy/Al2O3 Gate Dielectrics: A Path to Enhancement Mode GaN Devices MA Negara, M Kitano, RD Long, PC McIntyre ACS applied materials & interfaces 8 (32), 21089-21094, 2016 | 25 | 2016 |
The influence of HfO2 film thickness on the interface state density and low field mobility of n channel HfO2/TiN gate MOSFETs MA Negara, K Cherkaoui, P Majhi, CD Young, W Tsai, D Bauza, ... Microelectronic Engineering 84 (9-10), 1874-1877, 2007 | 25 | 2007 |
The influence of surface preparation on low temperature HfO2 ALD on InGaAs (001) and (110) surfaces T Kent, K Tang, V Chobpattana, MA Negara, M Edmonds, W Mitchell, ... The Journal of Chemical Physics 143 (16), 2015 | 19 | 2015 |
Analysis of effective mobility and hall effect mobility in high-k based In0. 75Ga0. 25As metal-oxide-semiconductor high-electron-mobility transistors MA Negara, D Veksler, J Huang, G Ghibaudo, PK Hurley, G Bersuker, ... Applied Physics Letters 99 (23), 2011 | 19 | 2011 |
Extreme learning machine and back propagation neural network comparison for temperature and humidity control of oyster mushroom based on microcontroller GM Fuady, AH Turoobi, MN Majdi, M Syaiin, RY Adhitya, I Rachman, ... 2017 International Symposium on Electronics and Smart Devices (ISESD), 46-50, 2017 | 18 | 2017 |
The formation and characterisation of lanthanum oxide based Si/high-k/NiSi gate stacks by electron-beam evaporation: an examination of in-situ amorphous silicon capping and … P Hurley, M Pijolat, K Cherkaoui, E O'Connor, D O'Connell, MA Negara, ... ECS Transactions 11 (4), 145, 2007 | 13 | 2007 |
Interface state densities, low frequency noise and electron mobility in surface channel In0. 53Ga0. 47As n-MOSFETs with a ZrO2 gate dielectric MA Negara, N Goel, D Bauza, G Ghibaudo, PK Hurley Microelectronic engineering 88 (7), 1095-1097, 2011 | 11 | 2011 |
Investigation of electron mobility in surface-channel Al2O3/In0. 53Ga0. 47As MOSFETs MA Negara, V Djara, TP O’Regan, K Cherkaoui, M Burke, YY Gomeniuk, ... Solid-state electronics 88, 37-42, 2013 | 8 | 2013 |
Equivalent oxide thickness correction in the high-k/In0. 53Ga0. 47As/InP system PK Hurley, R Long, T O'Regan, E O'Connor, S Monaghan, V Djara, ... ECS Transactions 33 (3), 433, 2010 | 8 | 2010 |
Can metal/Al2O3/In0. 53Ga0. 47As/InP MOSCAP properties translate to metal/Al2O3/In0. 53Ga0. 47As/InP MOSFET characteristics K Cherkaoui, V Djara, É O'Connor, J Lin, MA Negara, IM Povey, ... ECS Transactions 45 (3), 79, 2012 | 5 | 2012 |
Electrical properties of hfo2 films formed by ion assisted deposition K Cherkaoui, A Negara, S McDonnell, G Hughes, M Modreanu, PK Hurley 2006 25th International Conference on Microelectronics, 351-354, 2006 | 4 | 2006 |
Multi-frequency inversion-charge pumping for charge separation and mobility analysis in high-k/InGaAs metal-oxide-semiconductor field-effect transistors V Djara, K Cherkaoui, MA Negara, PK Hurley Journal of Applied Physics 118 (20), 2015 | 3 | 2015 |
Border Trap Analysis and Reduction in ALD-high-k InGaAs Gate Stacks K Tang, A Negara, T Kent, R Droopad, AC Kummel, PC McIntyre International Conference on Indium Phosphide and Related Materials (IPRM …, 2015 | 3 | 2015 |
Determination of physical parameters for HfO2/SiOx/TiN MOSFET gate stacks by electrical characterization and reverse modeling S Monaghan, PK Hurley, K Cherkaoui, MA Negara, A Schenk 2008 9th International Conference on Ultimate Integration of Silicon, 107-110, 2008 | 3 | 2008 |
The influence of oxide charge on carrier mobility in HfO2/TiN gate silicon MOSFETs PK Hurley, A Negara, T Van Hemert, K Cherkaoui ECS transactions 19 (2), 379, 2009 | 2 | 2009 |