GeSn/Ge heterostructure short-wave infrared photodetectors on silicon A Gassenq, F Gencarelli, J Van Campenhout, Y Shimura, R Loo, G Narcy, ... Optics express 20 (25), 27297-27303, 2012 | 213 | 2012 |
Optically pumped GeSn micro-disks with 16% Sn lasing at 3.1 μm up to 180 K V Reboud, A Gassenq, N Pauc, J Aubin, L Milord, QM Thai, M Bertrand, ... Applied Physics Letters 111 (9), 2017 | 194 | 2017 |
III-V-on-silicon photonic devices for optical communication and sensing G Roelkens, A Abassi, P Cardile, U Dave, A De Groote, Y De Koninck, ... Photonics 2 (3), 969-1004, 2015 | 180 | 2015 |
Silicon-based photonic integration beyond the telecommunication wavelength range G Roelkens, UD Dave, A Gassenq, N Hattasan, C Hu, B Kuyken, F Leo, ... IEEE Journal of Selected Topics in Quantum Electronics 20 (4), 394-404, 2014 | 142 | 2014 |
Silicon-on-insulator spectrometers with integrated GaInAsSb photodiodes for wide-band spectroscopy from 1510 to 2300 nm E Ryckeboer, A Gassenq, M Muneeb, N Hattasan, S Pathak, L Cerutti, ... Optics express 21 (5), 6101-6108, 2013 | 108 | 2013 |
Growth and structural properties of step-graded, high Sn content GeSn layers on Ge J Aubin, JM Hartmann, A Gassenq, JL Rouviere, E Robin, V Delaye, ... Semiconductor Science and Technology 32 (9), 094006, 2017 | 90 | 2017 |
Air-stable short-wave infrared PbS colloidal quantum dot photoconductors passivated with Al2O3 atomic layer deposition C Hu, A Gassenq, Y Justo, K Devloo-Casier, H Chen, C Detavernier, ... Applied Physics Letters 105 (17), 2014 | 89 | 2014 |
1.9% bi-axial tensile strain in thick germanium suspended membranes fabricated in optical germanium-on-insulator substrates for laser applications A Gassenq, K Guilloy, G Osvaldo Dias, N Pauc, D Rouchon, JM Hartmann, ... Applied Physics Letters 107 (19), 2015 | 88 | 2015 |
Silicon-based heterogeneous photonic integrated circuits for the mid-infrared G Roelkens, U Dave, A Gassenq, N Hattasan, C Hu, B Kuyken, F Leo, ... Optical Materials Express 3 (9), 1523-1536, 2013 | 85 | 2013 |
Raman spectral shift versus strain and composition in GeSn layers with 6%–15% Sn content A Gassenq, L Milord, J Aubin, N Pauc, K Guilloy, J Rothman, D Rouchon, ... Applied Physics Letters 110 (11), 2017 | 79 | 2017 |
Germanium based photonic components toward a full silicon/germanium photonic platform V Reboud, A Gassenq, JM Hartmann, J Widiez, L Virot, J Aubin, K Guilloy, ... Progress in Crystal growth and Characterization of Materials 63 (2), 1-24, 2017 | 72 | 2017 |
Germanium under high tensile stress: nonlinear dependence of direct band gap vs strain K Guilloy, N Pauc, A Gassenq, YM Niquet, JM Escalante, I Duchemin, ... ACS photonics 3 (10), 1907-1911, 2016 | 70 | 2016 |
Study of evanescently-coupled and grating-assisted GaInAsSb photodiodes integrated on a silicon photonic chip A Gassenq, N Hattasan, L Cerutti, JB Rodriguez, E Tournié, G Roelkens Optics Express 20 (11), 11665-11672, 2012 | 67 | 2012 |
Impact of thickness on the structural properties of high tin content GeSn layers J Aubin, JM Hartmann, A Gassenq, L Milord, N Pauc, V Reboud, V Calvo Journal of Crystal Growth 473, 20-27, 2017 | 61 | 2017 |
Raman-strain relations in highly strained Ge: Uniaxial⟨ 100⟩,⟨ 110⟩ and biaxial (001) stress A Gassenq, S Tardif, K Guilloy, I Duchemin, N Pauc, JM Hartmann, ... Journal of Applied Physics 121 (5), 2017 | 51 | 2017 |
Tensile strained germanium nanowires measured by photocurrent spectroscopy and X-ray microdiffraction K Guilloy, N Pauc, A Gassenq, P Gentile, S Tardif, F Rieutord, V Calvo Nano Letters 15 (4), 2429-2433, 2015 | 50 | 2015 |
Accurate strain measurements in highly strained Ge microbridges A Gassenq, S Tardif, K Guilloy, G Osvaldo Dias, N Pauc, I Duchemin, ... Applied Physics Letters 108 (24), 2016 | 48 | 2016 |
Heterogeneous integration of GaInAsSb pin photodiodes on a silicon-on-insulator waveguide circuit N Hattasan, A Gassenq, L Cerutti, JB Rodriguez, E Tournié, G Roelkens IEEE Photonics Technology Letters 23 (23), 1760-1762, 2011 | 43 | 2011 |
Gamma bandgap determination in pseudomorphic GeSn layers grown on Ge with up to 15% Sn content A Gassenq, L Milord, J Aubin, K Guilloy, S Tardif, N Pauc, J Rothman, ... Applied Physics Letters 109 (24), 2016 | 36 | 2016 |
The micropatterning of layers of colloidal quantum dots with inorganic ligands using selective wet etching C Hu, T Aubert, Y Justo, S Flamee, M Cirillo, A Gassenq, O Drobchak, ... Nanotechnology 25 (17), 175302, 2014 | 28 | 2014 |