Suivre
Bilel Hafsi
Bilel Hafsi
Université de Lille
Aucune adresse e-mail validée - Page d'accueil
Titre
Citée par
Citée par
Année
High-Sensitivity Sensor Using C60-Single Molecule Transistor
A Nasri, A Boubaker, B Hafsi, W Khaldi, A Kalboussi
IEEE Sensors journal 18 (1), 248-254, 2017
252017
TCAD Simulations of graphene field-effect transistors based on the quantum capacitance effect
B Hafsi, A Boubaker, N Ismaïl, A Kalboussi, K Lmimouni
Journal of the Korean Physical Society 67 (7), 1201-1207, 2015
202015
N-type polymeric organic flash memory device: effect of reduced graphene oxide floating gate
B Hafsi, A Boubaker, D Guerin, S Lenfant, A Kalboussi, K Lmimouni
Organic Electronics 45, 81-88, 2017
172017
A comparative TCAD simulations of a P-and N-type organic field effect transistors: field-dependent mobility, bulk and interface traps models
A Boubaker, B Hafsi, K Lmimouni, A Kalboussi
Journal of Materials Science: Materials in Electronics 28, 7834-7843, 2017
162017
Electron-transport polymeric gold nanoparticles memory device, artificial synapse for neuromorphic applications
B Hafsi, A Boubaker, D Guerin, S Lenfant, S Desbief, F Alibart, ...
Organic Electronics 50, 499-506, 2017
112017
A comparison study of electrode material effects on the molecular single electron transistor
A Nasri, A Boubaker, B Hafsi, W Khaldi, A Kalboussi
Organic Electronics 48, 7-11, 2017
72017
Tuning negative differential resistance in a single molecule transistor: Designs of logic gates and effects of various oxygen-and hydrogen-induced defects
A Nasri, A Boubaker, B Hafsi, W Khaldi, A Kalboussi
Digest Journal of Nanomaterials and Biostructures, 2017
72017
Traps and Interface Fixed Charge Effects on a Solution-Processed n-Type Polymeric-Based Organic Field-Effect Transistor
B Hafsi, A Boubaker, D Guerin, S Lenfant, A Kalboussi, K Lmimouni
Journal of Electronic Materials 46, 1128-1136, 2017
52017
Transport propreties of organic single electron transistor; dependence on acene length
A Nasri, A Boubaker, W Khaldi, B Hafsi, A Kalboussi
2017 International Conference on Engineering & MIS (ICEMIS), 1-7, 2017
42017
Traps density and temperature effects on the performance of organic rectifying diode based on pentacene
W Khaldi, B Hafsi, K Ferchichi, A Boubaker, A Nasri, K Lmimouni, ...
Organic Electronics 44, 106-109, 2017
42017
Simulation of single electron transistor inverter neuron: memory application
B Hafsi, A Boubaker, I Krout, A Kalboussi
International Journal of Information and Computer Sciences (IJICS) 2, 8-15, 2013
42013
Study and modeling neural memory based on single electron transistor using Simon simulator
B Hafsi, A Boubaker, I Krout, A Kalboussi
International Multi-Conference on Systems, Signals & Devices, 1-6, 2012
22012
Integrated Electrical System Based AD5933 Impedance analyzer: Towards Multi-Selective Detection of Complex Gas Mixtures
G Louis, T Holach, P Foulon, K Lmimouni, S Pecqueur, B Hafsi
Authorea Preprints, 2023
12023
A New Approach to Improve the Control of the Sensitive Layer of Surface Acoustic Wave Gas Sensors Using the Electropolymerization
Z Oumekloul, S Pecqueur, A de Maistre, P Pernod, K Lmimouni, A Talbi, ...
2022 Symposium on Design, Test, Integration and Packaging of MEMS/MOEMS …, 2022
12022
Single electron transistor: Energy-level broadening effect and thermionic contribution
A Nasri, A Boubaker, W Khaldi, B Hafsi, A Kalboussi
Semiconductors 51, 1656-1660, 2017
12017
Neural Network Based on SET Inverter Structures: Neuro-Inspired Memory
B Hafsi, R Elmissaoui, A Kalboussi
World Journal of Nano Science and Engineering 4 (04), 134, 2014
12014
Corrigendum to ‘Electron-transport polymeric gold nanoparticles memory device, artificial synapse for neuromorphic applications’[Organic Electronics Volume 50 (2017) 499-506]
B Hafsi, A Boubaker, D Guerin, S Lenfant, S Desbief, F Alibart, ...
Organic Electronics 54, 277-278, 2018
2018
Réalisation, caractérisation et simulation de composants organiques: transistors à effet de champ et mémoires
B Hafsi
Université de Lille, 2016
2016
Compact Modeling of Single Electron Memory Based on Perceptron Designs
A Boubaker, A Nasri, B Hafsi, A Kalboussi
J Material Sci Eng 4 (187), 2169-0022.1000187, 2015
2015
Simulation and comparative study of Graphene Field Effect transistor Using ISE TCAD
B Hafsi, A Boubaker, N Ismail, A Kalboussi, K Lmimouni, D Vuillaume
7th International Conference on Molecular Electronics, ElecMol14, 2014
2014
Le système ne peut pas réaliser cette opération maintenant. Veuillez réessayer plus tard.
Articles 1–20