| An optimized perovskite solar cell designs for high conversion efficiency A Hima, N Lakhdar, B Benhaoua, A Saadoune, I Kemerchou, F Rogti Superlattices and Microstructures 129, 240-246, 2019 | 145 | 2019 |
| Design and simulation of a high efficiency CdS/CdTe solar cell IE Tinedert, F Pezzimenti, ML Megherbi, A Saadoune Optik 208, 164112, 2020 | 58 | 2020 |
| Numerical modelling and optimization of CdS/CdTe solar cell with incorporation of Cu2O HT-EBL layer IE Tinedert, A Saadoune, I Bouchama, MA Saeed Optical Materials 106, 109970, 2020 | 50 | 2020 |
| Analysis of trapping effects on the forward current–voltage characteristics of Al-implanted 4H-SiC pin diodes ML Megherbi, F Pezzimenti, L Dehimi, MA Saadoune, FG Della Corte IEEE Transactions on Electron Devices 65 (8), 3371-3378, 2018 | 38 | 2018 |
| Analysis of the Forward I–V Characteristics of Al-Implanted 4H-SiC p-i-n Diodes with Modeling of Recombination and Trapping Effects Due to Intrinsic and … ML Megherbi, F Pezzimenti, L Dehimi, A Saadoune, FG Della Corte Journal of Electronic Materials 47, 1414-1420, 2018 | 35 | 2018 |
| Modelling of semiconductor diodes made of high defect concentration, irradiated, high resistivity and semi-insulating material: The capacitance–voltage characteristics A Saadoune, L Dehimi, N Sengouga, M McPherson, BK Jones Solid-state electronics 50 (7-8), 1178-1182, 2006 | 28 | 2006 |
| Inhomogeneous barrier height effect on the current–voltage characteristics of an Au/n-InP Schottky diode K Zeghdar, L Dehimi, A Saadoune, N Sengouga Journal of Semiconductors 36 (12), 124002, 2015 | 22 | 2015 |
| Analysis of I–V–T Characteristics of Au/n-InP Schottky Barrier Diodes with Modeling of Nanometer-Sized Patches at Low Temperature A Fritah, L Dehimi, F Pezzimenti, A Saadoune, B Abay Journal of Electronic Materials 48, 3692-3698, 2019 | 19 | 2019 |
| Effect and optimization of ZnO layer on the performance of GaInP/GaAs tandem solar cell A Bakour, A Saadoune, I Bouchama, F Dhiabi, S Boudour, MA Saeed Micro and Nanostructures 168, 207294, 2022 | 15 | 2022 |
| Effect of Electron Transporting Layer on Power Con-version Efficiency of Perockite-based Splar Cell: Comparative Study A Hima, N Lakhdar, A Saadoune Журнал нано-та електронної фізики, 01026-1-01026-5, 2019 | 15 | 2019 |
| Investigation on the non-ideal behaviour of Au/n-InP Schottky diodes by the simulation of I–V–T and C–V–T characteristics A Fritah, A Saadoune, L Dehimi, B Abay Philosophical Magazine 96 (19), 2009-2026, 2016 | 13 | 2016 |
| Design and numerical investigation of Perovskite/Silicon tandem solar cell M Bacha, A Saadoune, I Youcef Optical Materials 131, 112671, 2022 | 10 | 2022 |
| Modeling of semiconductor detectors made of defect-engineered silicon: The effective space charge density A Saadoune, SJ Moloi, K Bekhouche, L Dehimi, M McPherson, ... IEEE Transactions on Device and Materials Reliability 13 (1), 1-8, 2012 | 8 | 2012 |
| Image compression of surface defects of the hot-rolled steel strip using Principal Component Analysis A Boudiaf, K Boubendira, K Harrar, A Saadoune, H Ghodbane, A Dahane, ... Matériaux & Techniques 107 (2), 203, 2019 | 6 | 2019 |
| Numerical simulation and optimization of CH3NH3PbI3− xBrx perovskite solar cell for high conversion efficiency M Bacha, A Saadoune, I Youcef Optical Materials 122, 111734, 2021 | 4 | 2021 |
| Effects of the TiO2 high-k insulator material on the electrical characteristics of GaAs based Schottky barrier diodes S Zellag, L Dehimi, T Asar, A Saadoune, A Fritah, S Özçelik Applied Physics A 124, 1-8, 2018 | 3 | 2018 |
| Numerical simulation of radiation damage on the device performance of GaAs MESFETs Y Beddiafi, A Saadoune, L Dehimi | 3 | 2014 |
| A theoretical study of all-inorganic perovskite solar cells: Computational modeling of the CsPbI3/RbGeI3 bilayer absorber structure IE Tinedert, A Saadoune, MK Hossain Journal of Physics and Chemistry of Solids, 111951, 2024 | 2 | 2024 |
| PyAMS: A new software for modeling analog elements and circuit simulations F Dhiabi, ML Megherbi, A Saadoune, R Carotenuto, F Pezzimenti Int. J. Electr. Electron. Eng. Telecommun 10 (4), 233-242, 2021 | 1 | 2021 |
| Measurement and analysis of IVT characteristics of a AuGeNi/p-Si Schottky barrier diode W Terghini, A SAADOUNE, L DEHIMI, ML MEGHERBI, S ÖZÇELIKC | 1 | 2015 |
