Gerard Ghibaudo
Gerard Ghibaudo
IMEP-LAHC, Minatec-INP Grenoble
Adresse e-mail validée de - Page d'accueil
Citée par
Citée par
A new method for the extraction of MOSFET parameters
G Ghibaudo
Electronics letters 24, 543-544, 1988
Improved analysis of low frequency noise in field‐effect MOS transistors
G Ghibaudo, O Roux, C Nguyen‐Duc, F Balestra, J Brini
physica status solidi (a) 124 (2), 571-581, 1991
Review on high-k dielectrics reliability issues
G Ribes, J Mitard, M Denais, S Bruyere, F Monsieur, C Parthasarathy, ...
IEEE Transactions on Device and materials Reliability 5 (1), 5-19, 2005
Electrical noise and RTS fluctuations in advanced CMOS devices
G Ghibaudo, T Boutchacha
Microelectronics Reliability 42 (4-5), 573-582, 2002
A stacked SONOS technology, up to 4 levels and 6nm crystalline nanowires, with gate-all-around or independent gates (Φ-Flash), suitable for full 3D integration
A Hubert, E Nowak, K Tachi, V Maffini-Alvaro, C Vizioz, C Arvet, ...
2009 IEEE International Electron Devices Meeting (IEDM), 1-4, 2009
Ultimately thin double-gate SOI MOSFETs
T Ernst, S Cristoloveanu, G Ghibaudo, T Ouisse, S Horiguchi, Y Ono, ...
IEEE transactions on electron devices 50 (3), 830-838, 2003
HfO2-Based OxRAM Devices as Synapses for Convolutional Neural Networks
D Garbin, E Vianello, O Bichler, Q Rafhay, C Gamrat, G Ghibaudo, ...
IEEE Transactions on Electron Devices 62 (8), 2494-2501, 2015
Direct evaluation of low-field mobility and access resistance in pentacene field-effect transistors
Y Xu, T Minari, K Tsukagoshi, JA Chroboczek, G Ghibaudo
Journal of Applied Physics 107 (11), 2010
15nm-diameter 3D stacked nanowires with independent gates operation: ΦFET
C Dupré, A Hubert, S Becu, M Jublot, V Maffini-Alvaro, C Vizioz, ...
2008 IEEE International Electron Devices Meeting, 1-4, 2008
Improved split CV method for effective mobility extraction in sub-0.1-μm Si MOSFETs
K Romanjek, F Andrieu, T Ernst, G Ghibaudo
IEEE Electron Device Letters 25 (8), 583-585, 2004
Ionizing radiation induced leakage current on ultra-thin gate oxides
A Scarpa, A Paccagnella, F Montera, G Ghibaudo, G Pananakakis, ...
IEEE Transactions on Nuclear Science 44 (6), 1818-1825, 1997
Experimental and theoretical investigation of nano-crystal and nitride-trap memory devices
B De Salvo, G Ghibaudo, G Pananakakis, P Masson, T Baron, N Buffet, ...
IEEE Transactions on Electron Devices 48 (8), 1789-1799, 2001
Device and circuit cryogenic operation for low temperature electronics
F Balestra, G Ghibaudo
Kluwer Academic Publishers, 2001
Ultra-thin fully-depleted SOI MOSFETs: Special charge properties and coupling effects
S Eminente, S Cristoloveanu, R Clerc, A Ohata, G Ghibaudo
Solid-State Electronics 51 (2), 239-244, 2007
A thorough investigation of progressive breakdown in ultra-thin oxides. Physical understanding and application for industrial reliability assessment
F Monsieur, E Vincent, D Roy, S Bruyere, JC Vildeuil, G Pananakakis, ...
2002 IEEE International Reliability Physics Symposium. Proceedings. 40th …, 2002
3DVLSI with CoolCube process: An alternative path to scaling
P Batude, C Fenouillet-Beranger, L Pasini, V Lu, F Deprat, L Brunet, ...
2015 Symposium on VLSI Technology (VLSI Technology), T48-T49, 2015
Temperature dependence of the Fowler–Nordheim current in metal‐oxide‐degenerate semiconductor structures
G Pananakakis, G Ghibaudo, R Kies, C Papadas
Journal of Applied Physics 78 (4), 2635-2641, 1995
Unexpected mobility degradation for very short devices: A new challenge for CMOS scaling
A Cros, K Romanjek, D Fleury, S Harrison, R Cerutti, P Coronel, ...
2006 International Electron Devices Meeting, 1-4, 2006
Dry oxidation of silicon: A new model of growth including relaxation of stress by viscous flow
A Fargeix, G Ghibaudo
Journal of applied physics 54 (12), 7153-7158, 1983
75 nm damascene metal gate and high-k integration for advanced CMOS devices
B Guillaumot, X Garros, F Lime, K Oshima, B Tavel, JA Chroboczek, ...
Digest. International Electron Devices Meeting,, 355-358, 2002
Le système ne peut pas réaliser cette opération maintenant. Veuillez réessayer plus tard.
Articles 1–20