RF performance and small-signal parameter extraction of junctionless silicon nanowire MOSFETs S Cho, KR Kim, BG Park, IM Kang
IEEE Transactions on Electron Devices 58 (5), 1388-1396, 2011
207 2011 The analysis of dark signals in the CMOS APS imagers from the characterization of test structures HI Kwon, IM Kang, BG Park, JD Lee, SS Park
IEEE Transactions on Electron Devices 51 (2), 178-184, 2004
144 2004 Analyses on small-signal parameters and radio-frequency modeling of gate-all-around tunneling field-effect transistors S Cho, JS Lee, KR Kim, BG Park, JS Harris, IM Kang
IEEE transactions on electron devices 58 (12), 4164-4171, 2011
100 2011 Non-quasi-static small-signal modeling and analytical parameter extraction of SOI FinFETs IM Kang, H Shin
IEEE transactions on nanotechnology 5 (3), 205-210, 2006
92 2006 AlGaN/GaN FinFET with extremely broad transconductance by side-wall wet etch YW Jo, DH Son, CH Won, KS Im, JH Seo, IM Kang, JH Lee
IEEE Electron Device Letters 36 (10), 1008-1010, 2015
81 2015 Silicon-compatible compound semiconductor tunneling field-effect transistor for high performance and low standby power operation S Cho, I Man Kang, TI Kamins, BG Park, JS Harris
Applied Physics Letters 99 (24), 2011
54 2011 Five-step (pad–pad short–pad open–short–open) de-embedding method and its verification IM Kang, SJ Jung, TH Choi, JH Jung, C Chung, HS Kim, H Oh, HW Lee, ...
IEEE Electron Device Letters 30 (4), 398-400, 2009
48 2009 Simulation study on effect of drain underlap in gate-all-around tunneling field-effect transistors JS Lee, JH Seo, S Cho, JH Lee, SW Kang, JH Bae, ES Cho, IM Kang
Current Applied Physics 13 (6), 1143-1149, 2013
46 2013 Fluoropolymer-based organic memristor with multifunctionality for flexible neural network system MH Kim, HL Park, MH Kim, J Jang, JH Bae, IM Kang, SH Lee
npj Flexible Electronics 5 (1), 34, 2021
43 2021 Low voltage operation of GaN vertical nanowire MOSFET DH Son, YW Jo, JH Seo, CH Won, KS Im, YS Lee, HS Jang, DH Kim, ...
Solid-State Electronics 145, 1-7, 2018
42 2018 Fabrication and characterization of a thin-body poly-Si 1T DRAM with charge-trap effect JH Seo, YJ Yoon, E Yu, W Sun, H Shin, IM Kang, JH Lee, S Cho
IEEE Electron Device Letters 40 (4), 566-569, 2019
34 2019 Al(In)N/GaN Fin-Type HEMT With Very-Low Leakage Current and Enhanced JH Seo, YW Jo, YJ Yoon, DH Son, CH Won, HS Jang, IM Kang, JH Lee
IEEE Electron Device Letters 37 (7), 855-858, 2016
32 2016 Sol-Gel Processed Yttrium-Doped SnO2 Thin Film Transistors C Lee, WY Lee, H Lee, S Ha, JH Bae, IM Kang, H Kang, K Kim, J Jang
Electronics 9 (2), 254, 2020
31 2020 Suppression of current collapse in AlGaN/GaN MISHFET with carbon‐doped GaN/undoped GaN multi‐layered buffer structure HS Kang, CH Won, YJ Kim, DS Kim, YJ Yoon, IM Kang, YS Lee, JH Lee
physica status solidi (a) 212 (5), 1116-1121, 2015
31 2015 Design and analysis of Si-based arch-shaped gate-all-around (GAA) tunneling field-effect transistor (TFET) JH Seo, YJ Yoon, S Lee, JH Lee, S Cho, IM Kang
Current Applied Physics 15 (3), 208-212, 2015
31 2015 Design and analysis of Si-based arch-shaped gate-all-around (GAA) tunneling field-effect transistor (TFET) JH Seo, YJ Yoon, S Lee, JH Lee, S Cho, IM Kang
Current Applied Physics 15 (3), 208-212, 2015
31 2015 Design optimization of tunneling field-effect transistor based on silicon nanowire PNPN structure and its radio frequency characteristics S Cho, IM Kang
Current Applied Physics 12 (3), 673-677, 2012
31 2012 Separate extraction of gate resistance components in RF MOSFETs M Kang, IM Kang, YH Jung, H Shin
IEEE transactions on electron devices 54 (6), 1459-1463, 2007
31 2007 Capacitorless one-transistor dynamic random access memory based on double-gate GaAs junctionless transistor YJ Yoon, JH Seo, MS Cho, BG Kim, SH Lee, IM Kang
Japanese Journal of Applied Physics 56 (6S1), 06GF01, 2017
30 2017 1/f-noise in AlGaN/GaN nanowire omega-FinFETs S Vodapally, YI Jang, IM Kang, IT Cho, JH Lee, Y Bae, G Ghibaudo, ...
IEEE Electron Device Letters 38 (2), 252-254, 2016
29 2016 