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Injo Ok
Injo Ok
NY CREATES
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Metal-oxide-semiconductor capacitors on GaAs with high-k gate oxide and amorphous silicon interface passivation layer
S Koveshnikov, W Tsai, I Ok, JC Lee, V Torkanov, M Yakimov, ...
Applied physics letters 88 (2), 2006
2332006
A 10nm platform technology for low power and high performance application featuring FINFET devices with multi workfunction gate stack on bulk and SOI
KI Seo, B Haran, D Gupta, D Guo, T Standaert, R Xie, H Shang, E Alptekin, ...
2014 Symposium on VLSI Technology (VLSI-Technology): Digest of Technical …, 2014
1082014
Metal gate-HfO/sub 2/MOS structures on GaAs substrate with and without Si interlayer
I Ok, H Kim, M Zhang, CY Kang, SJ Rhee, C Choi, SA Krishnan, T Lee, ...
IEEE electron device letters 27 (3), 145-147, 2006
982006
HERMES Core–A 14nm CMOS and PCM-based In-Memory Compute Core using an array of 300ps/LSB Linearized CCO-based ADCs and local digital processing
R Khaddam-Aljameh, M Stanisavljevic, JF Mas, G Karunaratne, ...
2021 Symposium on VLSI Circuits, 1-2, 2021
922021
Method for dual-channel nanowire FET device
CC Hobbs, K Akarvardar, OK Injo
US Patent 8,183,104, 2012
842012
Self-aligned n-and p-channel GaAs MOSFETs on undoped and p-type substrates using HfO2 and silicon interface passivation layer
IJ Ok, H Kim, M Zhang, T Lee, F Zhu, L Yu, S Koveshnikov, W Tsai, ...
2006 International Electron Devices Meeting, 1-4, 2006
822006
Addressing the gate stack challenge for high mobility InxGa1-xAs channels for NFETs
N Goel, D Heh, S Koveshnikov, I Ok, S Oktyabrsky, V Tokranov, ...
2008 IEEE International Electron Devices Meeting, 1-4, 2008
752008
Metal gate-HfO2 metal-oxide-semiconductor capacitors on n-GaAs substrate with silicon/germanium interfacial passivation layers
HS Kim, I Ok, M Zhang, T Lee, F Zhu, L Yu, JC Lee
Applied physics letters 89 (22), 2006
732006
Ultrathin HfO2 (equivalent oxide thickness= 1.1 nm) metal-oxide-semiconductor capacitors on n-GaAs substrate with germanium passivation
HS Kim, I Ok, M Zhang, C Choi, T Lee, F Zhu, G Thareja, L Yu, JC Lee
Applied physics letters 88 (25), 2006
732006
300mm FinFET results utilizing conformal, damage free, ultra shallow junctions (Xj∼5nm) formed with molecular monolayer doping technique
KW Ang, J Barnett, WY Loh, J Huang, BG Min, PY Hung, I Ok, JH Yum, ...
2011 International Electron Devices Meeting, 35.5. 1-35.5. 4, 2011
702011
Self-aligned n-channel metal-oxide-semiconductor field effect transistor on high-indium-content In0. 53Ga0. 47As and InP using physical vapor deposition HfO2 and silicon …
IJ Ok, H Kim, M Zhang, F Zhu, S Park, J Yum, H Zhao, D Garcia, P Majhi, ...
Applied Physics Letters 92 (20), 2008
692008
HERMES-Core—A 1.59-TOPS/mm2 PCM on 14-nm CMOS In-Memory Compute Core Using 300-ps/LSB Linearized CCO-Based ADCs
R Khaddam-Aljameh, M Stanisavljevic, JF Mas, G Karunaratne, M Brändli, ...
IEEE Journal of Solid-State Circuits 57 (4), 1027-1038, 2022
662022
Gate-first inversion-type InP metal-oxide-semiconductor field-effect transistors with atomic-layer-deposited Al2O3 gate dielectric
H Zhao, D Shahrjerdi, F Zhu, M Zhang, HS Kim, I Ok, JH Yum, SI Park, ...
Applied Physics Letters 92 (23), 2008
64*2008
Fully on-chip MAC at 14 nm enabled by accurate row-wise programming of PCM-based weights and parallel vector-transport in duration-format
P Narayanan, S Ambrogio, A Okazaki, K Hosokawa, H Tsai, A Nomura, ...
IEEE Transactions on Electron Devices 68 (12), 6629-6636, 2021
622021
Strained SiGe and Si FinFETs for high performance logic with SiGe/Si stack on SOI
I Ok, K Akarvardar, S Lin, M Baykan, CD Young, PY Hung, MP Rodgers, ...
2010 International Electron Devices Meeting, 34.2. 1-34.2. 4, 2010
572010
A 64-core mixed-signal in-memory compute chip based on phase-change memory for deep neural network inference
M Le Gallo, R Khaddam-Aljameh, M Stanisavljevic, A Vasilopoulos, ...
Nature Electronics 6 (9), 680-693, 2023
472023
A study of metal-oxide-semiconductor capacitors on GaAs, In0. 53Ga0. 47As, InAs, and InSb substrates using a germanium interfacial passivation layer
HS Kim, I Ok, M Zhang, F Zhu, S Park, J Yum, H Zhao, JC Lee, P Majhi, ...
Applied Physics Letters 93 (6), 2008
452008
Aggressively scaled ultra thin undoped HfO/sub 2/gate dielectric (EOT< 0.7 nm) with TaN gate electrode using engineered interface layer
C Choi, CY Kang, SJ Rhee, MS Akbar, SA Krishnan, M Zhang, HS Kim, ...
IEEE electron device letters 26 (7), 454-457, 2005
452005
Stable contact on one-sided gate tie-down structure
OK Injo, B Pranatharthiharan, SC Seo, CVVS Surisetty
US Patent 9,685,340, 2017
422017
Inversion-type enhancement-mode HfO2-based GaAs metal-oxide-semiconductor field effect transistors with a thin Ge layer
HS Kim, I Ok, M Zhang, F Zhu, S Park, J Yum, H Zhao, JC Lee, J Oh, ...
Applied Physics Letters 92 (3), 2008
412008
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