| A Comparative Study of Different Physics-Based NBTI Models S Mahapatra, N Goel, S Desai, S Gupta, B Jose, S Mukhopadhyay, ... IEEE, 2013 | 330 | 2013 |
| Low-threshold optically pumped lasing in highly strained germanium nanowires S Bao, D Kim, C Onwukaeme, S Gupta, K Saraswat, KH Lee, Y Kim, D Min, ... Nature Communications 8 (1), 1845, 2017 | 170 | 2017 |
| 56 Gb/s germanium waveguide electro-absorption modulator SA Srinivasan, M Pantouvaki, S Gupta, HT Chen, P Verheyen, G Lepage, ... Journal of Lightwave Technology 34 (2), 419-424, 2015 | 168 | 2015 |
| Contact resistivity reduction through interfacial layer doping in metal-interfacial layer-semiconductor contacts S Gupta, P Paramahans Manik, R Kesh Mishra, A Nainani, MC Abraham, ... Journal of Applied Physics 113 (23), 234505, 2013 | 118 | 2013 |
| Direct bandgap light emission from strained germanium nanowires coupled with high-Q nanophotonic cavities J Petykiewicz, D Nam, DS Sukhdeo, S Gupta, S Buckley, AY Piggott, ... Nano letters 16 (4), 2168-2173, 2016 | 102 | 2016 |
| Study of carrier statistics in uniaxially strained Ge for a low-threshold Ge laser D Nam, DS Sukhdeo, S Gupta, JH Kang, ML Brongersma, KC Saraswat IEEE Journal of Selected Topics in Quantum Electronics 20 (4), 16-22, 2013 | 62 | 2013 |
| Toward system on chip (SoC) development using FinFET technology: Challenges, solutions, process co-development & optimization guidelines M Shrivastava, R Mehta, S Gupta, N Agrawal, MS Baghini, DK Sharma, ... IEEE Transactions on Electron Devices 58 (6), 1597-1607, 2011 | 52 | 2011 |
| 50GHz Ge waveguide electro-absorption modulator integrated in a 220nm SOI photonics platform S Gupta, SA Srinivasan, M Pantouvaki, H Chen, P Verheyen, G Lepage, ... Optical Fiber Communication Conference, Tu2A. 4, 2015 | 49 | 2015 |
| Is strain engineering scalable in FinFET era?: Teaching the old dog some new tricks A Nainani, S Gupta, V Moroz, M Choi, Y Kim, Y Cho, J Gelatos, ... 2012 International Electron Devices Meeting, 18.3. 1-18.3. 4, 2012 | 44 | 2012 |
| Real-number photonic encoding M Gould, D Bunandar, S Gupta, NC Harris US Patent 10,608,663, 2020 | 34 | 2020 |
| Dual slot-mode NOEM phase shifter R Baghdadi, M Gould, S Gupta, M Tymchenko, D Bunandar, C Ramey, ... Optics Express 29 (12), 19113-19119, 2021 | 32 | 2021 |
| Room temperature lasing unraveled by a strong resonance between gain and parasitic absorption in uniaxially strained germanium S Gupta, D Nam, J Vuckovic, K Saraswat Physical Review B 97 (15), 155127, 2018 | 32 | 2018 |
| Impact of minority carrier lifetime on the performance of strained germanium light sources DS Sukhdeo, S Gupta, KC Saraswat, BR Dutt, D Nam Optics Communications 364, 233-237, 2016 | 30 | 2016 |
| Theoretical Modeling for the Interaction of Tin Alloying With N-Type Doping and Tensile Strain for GeSn Lasers D Sukhdeo, Y Kim, S Gupta, K Saraswat, B Dutt, D Nam IEEE Electron Device Letters 37 (10), 1307-1310, 2016 | 28 | 2016 |
| IRT: A modeling system for single event upset analysis that captures charge sharing effects K Foley, N Seifert, JB Velamala, WG Bennett, S Gupta 2014 IEEE International Reliability Physics Symposium, 5F. 1.1-5F. 1.9, 2014 | 26 | 2014 |
| A comprehensive and critical re-assessment of 2-stage energy level NBTI model S Gupta, B Jose, K Joshi, A Jain, MA Alam, S Mahapatra Reliability Physics Symposium (IRPS), 2012 IEEE International, XT. 3.1-XT. 3.6, 2012 | 25 | 2012 |
| ZnO: an attractive option for n-type metal-interfacial layer-semiconductor (Si, Ge, SiC) contacts P Paramahans, S Gupta, RK Mishra, N Agarwal, A Nainani, Y Huang, ... 2012 Symposium on VLSI Technology (VLSIT), 83-84, 2012 | 22 | 2012 |
| Ge microdisk with lithographically-tunable strain using CMOS-compatible process DS Sukhdeo, J Petykiewicz, S Gupta, D Kim, S Woo, Y Kim, J Vučković, ... Optics express 23 (26), 33249-33254, 2015 | 16 | 2015 |
| Accelerating artificial intelligence with silicon photonics NC Harris, R Braid, D Bunandar, J Carr, B Dobbie, C Dorta-Quinones, ... 2020 Optical Fiber Communications Conference and Exhibition (OFC), 1-4, 2020 | 14 | 2020 |
| Epitaxially Defined FinFET: Variability Resistant and High-Performance Technology S Mittal, S Gupta, A Nainani, MC Abraham, K Schuegraf, S Lodha, ... Transactions on Electron Devices, 2014 | 14 | 2014 |
