| Architecture and process integration overview of 3D NAND flash technologies GH Lee, S Hwang, J Yu, H Kim Applied Sciences 11 (15), 6703, 2021 | 51 | 2021 |
| Investigation of Sidewall High-k Interfacial Layer Effect in Gate-All-Around Structure D Ryu, M Kim, J Yu, S Kim, JH Lee, BG Park IEEE Transactions on Electron Devices 67 (4), 1859-1863, 2020 | 28 | 2020 |
| Design and optimization of triple-k spacer structure in two-stack nanosheet FET from OFF-state leakage perspective D Ryu, M Kim, S Kim, Y Choi, J Yu, JH Lee, BG Park IEEE Transactions on Electron Devices 67 (3), 1317-1322, 2020 | 27 | 2020 |
| Comprehensive and accurate analysis of the working principle in ferroelectric tunnel junctions using low-frequency noise spectroscopy W Shin, KK Min, JH Bae, J Yim, D Kwon, Y Kim, J Yu, J Hwang, BG Park, ... Nanoscale 14 (6), 2177-2185, 2022 | 25 | 2022 |
| Electrical and thermal performances of omega-shaped-gate nanowire field effect transistors for low power operation YS Song, S Hwang, KK Min, T Jang, Y Choi, J Yu, JH Lee, BG Park Journal of nanoscience and nanotechnology 20 (7), 4092-4096, 2020 | 25 | 2020 |
| Capacitor-based synaptic devices for hardware spiking neural networks S Hwang, J Yu, GH Lee, MS Song, J Chang, KK Min, T Jang, JH Lee, ... IEEE Electron Device Letters 43 (4), 549-552, 2022 | 22 | 2022 |
| Low-latency spiking neural networks using pre-charged membrane potential and delayed evaluation S Hwang, J Chang, MH Oh, KK Min, T Jang, K Park, J Yu, JH Lee, ... Frontiers in Neuroscience 15, 629000, 2021 | 18 | 2021 |
| Ferroelectricity of pure HfOx in metal-ferroelectric-insulator-semiconductor stacks and its memory application KK Min, J Yu, Y Kim, CS Kim, T Jang, S Hwang, H Kim, JH Lee, D Kwon, ... Applied Surface Science 573, 151566, 2022 | 16 | 2022 |
| Tunneling oxide engineering for improving retention in nonvolatile charge-trapping memory with TaN/Al2O3/HfO2/SiO2/Al2O3/SiO2/Si structure YS Song, T Jang, KK Min, MH Baek, J Yu, Y Kim, JH Lee, BG Park Japanese Journal of Applied Physics 59 (6), 061006, 2020 | 14 | 2020 |
| Interlayer engineering for enhanced ferroelectric tunnel junction operations in HfO x-based metal-ferroelectric-insulator-semiconductor stack KK Min, J Yu, Y Kim, JH Lee, D Kwon, BG Park Nanotechnology 32 (49), 495203, 2021 | 12 | 2021 |
| Lamination method for improved polarization-leakage current relation in HfO2-based metal/ferroelectric/insulator/semiconductor structure Y Kim, KK Min, J Yu, D Kwon, BG Park Semiconductor Science and Technology 37 (4), 045001, 2022 | 11 | 2022 |
| Ferroelectric field-effect transistors for binary neural network with 3-D NAND architecture GH Lee, MS Song, S Kim, J Yim, S Hwang, J Yu, D Kwon, H Kim IEEE Transactions on Electron Devices 69 (11), 6438-6445, 2022 | 10 | 2022 |
| Investigation on ambipolar current suppression using a stacked gate in an L-shaped tunnel field-effect transistor J Yu, S Kim, D Ryu, K Lee, C Kim, JH Lee, S Kim, BG Park Micromachines 10 (11), 753, 2019 | 10 | 2019 |
| A novel physical unclonable function (PUF) using 16× 16 pure-HfO x ferroelectric tunnel junction array for security applications J Yu, KK Min, Y Kim, S Kim, S Hwang, TH Kim, C Kim, H Kim, JH Lee, ... Nanotechnology 32 (48), 485202, 2021 | 8 | 2021 |
| Improvement in self-heating characteristic by utilizing sapphire substrate in omega-gate-shaped nanowire field effect transistor for wearable, military, and aerospace application Y Suh Song, H Kim, J Yu, J Lee Journal of Nanoscience and Nanotechnology 21 (5), 3092-3098, 2021 | 8 | 2021 |
| Impact of interlayer insulator formation methods on HfOx ferroelectricity in the metal–ferroelectric–insulator–semiconductor stack KK Min, SJ Kwon, Y Kim, J Yu, JH Lee, BG Park, D Kwon Applied Physics Letters 120 (1), 2022 | 5 | 2022 |
| Damage-Induced Ferroelectricity in HfOx-Based Thin Film KK Min, HM Kim, Y Kim, C Kim, J Yu, JH Lee, BG Park, D Kwon IEEE Electron Device Letters 43 (5), 713-716, 2022 | 3 | 2022 |
| Investigation of Ambipolar Current Suppression Using Dual Work Function Metal Gate in L-Shaped Tunnel Field Effect Transistor J Yu, S Kim, MH Baek, KK Min, T Jang, YS Song, BG Park 대한전자공학회 학술대회, 52-53, 2019 | 3 | 2019 |
| Effects of pillar conditions on dc/ac characteristics of tunnel field-effect transistor with vertical structures J Yu, BG Park, DW Kwon Journal of Semiconductor Technology and Science 21 (4), 241-246, 2021 | 1 | 2021 |
| Investigation of Coupling Effect on Capacitor-based Neural Network J Yu, S Hwang, H Kim, BG Park 2022 IEEE Silicon Nanoelectronics Workshop (SNW), 1-2, 2022 | | 2022 |
