Fabien Rortais
Fabien Rortais
Experimental physicist
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Cited by
Quantum computational advantage with a programmable photonic processor
LS Madsen, F Laudenbach, MF Askarani, F Rortais, T Vincent, ...
Nature 606 (7912), 75-81, 2022
Evidence for spin-to-charge conversion by Rashba coupling in metallic states at the Fe/Ge (111) interface
S Oyarzún, AK Nandy, F Rortais, JC Rojas-Sánchez, MT Dau, P Noël, ...
Nature communications 7 (1), 13857, 2016
Millimeter-scale layered MoSe2 grown on sapphire and evidence for negative magnetoresistance
MT Dau, C Vergnaud, A Marty, F Rortais, C Beigné, H Boukari, ...
Applied Physics Letters 110 (1), 2017
Spin transport in p-type germanium
F Rortais, S Oyarzún, F Bottegoni, JC Rojas-Sánchez, P Laczkowski, ...
Journal of Physics: Condensed Matter 28 (16), 165801, 2016
Imaging spin diffusion in germanium at room temperature
C Zucchetti, F Bottegoni, C Vergnaud, F Ciccacci, G Isella, L Ghirardini, ...
Physical Review B 96 (1), 014403, 2017
Non-local electrical spin injection and detection in germanium at room temperature
F Rortais, C Vergnaud, A Marty, L Vila, JP Attané, J Widiez, C Zucchetti, ...
Applied Physics Letters 111 (18), 2017
Quantitative and systematic analysis of bias dependence of spin accumulation voltage in a nondegenerate Si-based spin valve
S Lee, F Rortais, R Ohshima, Y Ando, S Miwa, Y Suzuki, H Koike, ...
Physical Review B 99 (6), 064408, 2019
Spin-to-charge conversion for hot photoexcited electrons in germanium
C Zucchetti, F Bottegoni, G Isella, M Finazzi, F Rortais, C Vergnaud, ...
Physical Review B 97 (12), 125203, 2018
Spin diffusion in Pt as probed by optically generated spin currents
F Bottegoni, A Ferrari, F Rortais, C Vergnaud, A Marty, G Isella, M Finazzi, ...
Physical Review B 92 (21), 214403, 2015
Electrical spin injection in silicon and the role of defects
F Rortais, C Vergnaud, C Ducruet, C Beigné, A Marty, JP Attané, J Widiez, ...
Physical Review B 94 (17), 174426, 2016
Spin-orbit coupling induced by bismuth doping in silicon thin films
F Rortais, S Lee, R Ohshima, S Dushenko, Y Ando, M Shiraishi
Applied Physics Letters 113 (12), 2018
Introduction and pinning of domain walls in 50 nm NiFe constrictions using local and external magnetic fields
G Zahnd, VT Pham, A Marty, M Jamet, C Beigné, L Notin, C Vergnaud, ...
Journal of Magnetism and Magnetic Materials 406, 166-170, 2016
Investigation of gating effect in Si spin MOSFET
S Lee, F Rortais, R Ohshima, Y Ando, M Goto, S Miwa, Y Suzuki, H Koike, ...
Applied Physics Letters 116 (2), 2020
Monolayer MoS2 field effect transistor with low Schottky barrier height with ferromagnetic metal contacts
S Gupta, F Rortais, R Ohshima, Y Ando, T Endo, Y Miyata, M Shiraishi
Scientific Reports 9 (1), 17032, 2019
Approaching barrier-free contacts to monolayer MoS2 employing [Co/Pt] multilayer electrodes
S Gupta, F Rortais, R Ohshima, Y Ando, T Endo, Y Miyata, M Shiraishi
NPG Asia Materials 13 (1), 13, 2021
Optical orientation and inverse spin Hall effect as effective tools to investigate spin-dependent diffusion
M Finazzi, F Bottegoni, C Zucchetti, M Bollani, A Ballabio, J Frigerio, ...
Electronics 5 (4), 80, 2016
Observation of the Hanle effect in giant magnetoresistance measurements
G Zahnd, L Vila, VT Pham, F Rortais, M Cosset-Cheneau, C Vergnaud, ...
Applied Physics Letters 112 (23), 2018
Spin–Charge Conversion Phenomena in Germanium
S Oyarzún, F Rortais, JC Rojas-Sánchez, F Bottegoni, P Laczkowski, ...
Journal of the Physical Society of Japan 86 (1), 011002, 2017
Bias current dependence of spin accumulation voltage in n-Si spin MOSFET
S Lee, H Koike, M Goto, S Miwa, Y Suzuki, F Rortais, E Shigematsu, ...
한국자기학회 학술연구발표회 논문개요집 31 (2), 321-322, 2022
Towards barrier-free contacts to monolayer transition metal dichalcogenides
S Gupta, F Rortais, R Ohshima, Y Ando, Y Miyata, M Shiraishi
Spintronics XIII 11470, 114702O, 2020
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Articles 1–20