Non-polar and semi-polar GaN substrates, devices, and methods for making them AD Hanser, EA Preble, L Liu, TL Clites, KR Evans US Patent 7,727,874, 2010 | 323 | 2010 |
Method for making group III nitride articles AD Hanser, L Liu, EA Preble, D Tsvetkov, NM Williams, X Xu US Patent 8,435,879, 2013 | 272 | 2013 |
Structural TEM study of nonpolar -plane gallium nitride grown on -SiC by organometallic vapor phase epitaxy DN Zakharov, Z Liliental-Weber, B Wagner, ZJ Reitmeier, EA Preble, ... Physical Review B 71 (23), 235334, 2005 | 270 | 2005 |
Single crystal group III nitride articles and method of producing same by HVPE method incorporating a polycrystalline layer for yield enhancement EA Preble, L Liu, AD Hanser, NM Williams, X Xu US Patent 7,897,490, 2011 | 249 | 2011 |
Accurate dependence of gallium nitride thermal conductivity on dislocation density C Mion, JF Muth, EA Preble, D Hanser Applied Physics Letters 89 (9), 2006 | 241 | 2006 |
Universal phonon mean free path spectra in crystalline semiconductors at high temperature JP Freedman, JH Leach, EA Preble, Z Sitar, RF Davis, JA Malen Scientific reports 3 (1), 2963, 2013 | 179 | 2013 |
GaN ultraviolet avalanche photodiodes with optical gain greater than 1000 grown on GaN substrates by metal-organic chemical vapor deposition JB Limb, D Yoo, JH Ryou, W Lee, SC Shen, RD Dupuis, ML Reed, ... Applied physics letters 89 (1), 2006 | 142 | 2006 |
Temperature-dependent electrical characteristics of bulk GaN Schottky rectifier Y Zhou, D Wang, C Ahyi, CC Tin, J Williams, M Park, NM Williams, ... Journal of applied physics 101 (2), 2007 | 109 | 2007 |
Green light emitting diodes on a-plane GaN bulk substrates T Detchprohm, M Zhu, Y Li, Y Xia, C Wetzel, EA Preble, L Liu, T Paskova, ... Applied Physics Letters 92 (24), 2008 | 102 | 2008 |
High-quality bulk a-plane GaN sliced from boules in comparison to heteroepitaxially grown thick films on r-plane sapphire T Paskova, R Kroeger, S Figge, D Hommel, V Darakchieva, B Monemar, ... Applied physics letters 89 (5), 2006 | 99 | 2006 |
Surface preparation of substrates from bulk GaN crystals D Hanser, M Tutor, E Preble, M Williams, X Xu, D Tsvetkov, L Liu Journal of Crystal Growth 305 (2), 372-376, 2007 | 91 | 2007 |
Pendeo-epitaxial growth of thin films of gallium nitride and related materials and their characterization RF Davis, T Gehrke, KJ Linthicum, TS Zheleva, EA Preble, P Rajagopal, ... Journal of crystal growth 225 (2-4), 134-140, 2001 | 89 | 2001 |
High-temperature electromechanical characterization of AlN single crystals T Kim, J Kim, R Dalmau, R Schlesser, E Preble, X Jiang IEEE transactions on Ultrasonics, Ferroelectrics, and Frequency control 62 …, 2015 | 87 | 2015 |
Gallium nitride and related materials: challenges in materials processing RF Davis, S Einfeldt, EA Preble, AM Roskowski, ZJ Reitmeier, PQ Miraglia Acta Materialia 51 (19), 5961-5979, 2003 | 84 | 2003 |
Formation, etching and electrical characterization of a thermally grown gallium oxide on the Ga-face of a bulk GaN substrate Y Zhou, C Ahyi, T Isaacs-Smith, M Bozack, CC Tin, J Williams, M Park, ... Solid-State Electronics 52 (5), 756-764, 2008 | 83 | 2008 |
Wavelength-stable cyan and green light emitting diodes on nonpolar m-plane GaN bulk substrates T Detchprohm, M Zhu, Y Li, L Zhao, S You, C Wetzel, EA Preble, ... Applied Physics Letters 96 (5), 2010 | 81 | 2010 |
Light-emitting diode development on polar and non-polar GaN substrates C Wetzel, M Zhu, J Senawiratne, T Detchprohm, PD Persans, L Liu, ... Journal of Crystal Growth 310 (17), 3987-3991, 2008 | 81 | 2008 |
Thermal conductivity, dislocation density and GaN device design C Mion, JF Muth, EA Preble, D Hanser Superlattices and Microstructures 40 (4-6), 338-342, 2006 | 69 | 2006 |
Gallium nitride materials-progress, status, and potential roadblocks RF Davis, AM Roskowski, EA Preble, JS Speck, B Heying, JA Freitas, ... Proceedings of the IEEE 90 (6), 993-1005, 2002 | 69 | 2002 |
High electron velocity submicrometer AlN/GaN MOS-HEMTs on freestanding GaN substrates DJ Meyer, DA Deen, DF Storm, MG Ancona, DS Katzer, R Bass, ... IEEE electron device letters 34 (2), 199-201, 2013 | 65 | 2013 |