| Molecular switches from benzene derivatives adsorbed on metal surfaces W Liu, SN Filimonov, J Carrasco, A Tkatchenko Nature Communications 4 (1), 2569, 2013 | 92 | 2013 |
| Terrace-edge-kink model of atomic processes at the permeable steps SN Filimonov, YY Hervieu Surface science 553 (1-3), 133-144, 2004 | 55 | 2004 |
| Switchable Schottky contacts: simultaneously enhanced output current and reduced leakage current G Su, S Yang, S Li, CJ Butch, SN Filimonov, JC Ren, W Liu Journal of the American Chemical Society 141 (4), 1628-1635, 2019 | 46 | 2019 |
| Identification of Ge/Si intermixing processes at the Bi/Ge/Si (111) surface N Paul, S Filimonov, V Cherepanov, M Çakmak, B Voigtländer Physical review letters 98 (16), 166104, 2007 | 27 | 2007 |
| Growth rate anomaly in ultralow-pressure chemical vapor deposition of 3C-SiC on Si (001) using monomethylsilane E Saito, SN Filimonov, M Suemitsu Japanese journal of applied physics 50 (1R), 010203, 2011 | 26 | 2011 |
| Dislocation networks in conventional and surfactant-mediated Ge/Si (1 1 1) epitaxy SN Filimonov, V Cherepanov, N Paul, H Asaoka, J Brona, B Voigtländer Surface science 599 (1-3), 76-84, 2005 | 26 | 2005 |
| Scaling of submonolayer island sizes in surfactant-mediated epitaxy of semiconductors V Cherepanov, S Filimonov, J Mysliveček, B Voigtländer Physical Review B 70 (8), 085401, 2004 | 26 | 2004 |
| Multistage nucleation of two-dimensional Si islands on Si (111)− 7× 7 during MBE growth: STM experiments and extended rate-equation model S Filimonov, V Cherepanov, Y Hervieu, B Voigtländer Physical Review B 76 (3), 035428, 2007 | 23 | 2007 |
| In situ SR-XPS observation of Ni-assisted low-temperature formation of epitaxial graphene on 3C-SiC/Si M Hasegawa, K Sugawara, R Suto, S Sambonsuge, Y Teraoka, ... Nanoscale Research Letters 10, 1-6, 2015 | 20 | 2015 |
| Model of step propagation and step bunching at the sidewalls of nanowires SN Filimonov, YY Hervieu Journal of Crystal Growth 427, 60-66, 2015 | 20 | 2015 |
| “Rotating” steps in Si (0 0 1) homoepitaxy SN Filimonov, B Voigtländer Surface science 549 (1), 31-36, 2004 | 17 | 2004 |
| Principles of design for substrate-supported molecular switches based on physisorbed and chemisorbed states S Yang, S Li, SN Filimonov, M Fuentes-Cabrera, W Liu ACS applied materials & interfaces 10 (31), 26772-26780, 2018 | 16 | 2018 |
| Influence of strain on binding energies of Si atoms at Ge (111) surfaces SN Filimonov, B Voigtländer Surface science 512 (1-2), L335-L340, 2002 | 13 | 2002 |
| Statistics of second layer nucleation in heteroepitaxial growth SN Filimonov, YY Hervieu Surface science 507, 270-275, 2002 | 12 | 2002 |
| Ab Initio Calculations of Absolute Surface Energies of Clean and Hydrogen Covered 3C-SiC(001), (110) and (111) Surfaces SN Filimonov Materials Science Forum 821, 363-366, 2015 | 11 | 2015 |
| Rotated epitaxy of 3C-SiC (111) on Si (110) substrate using monomethylsilane-based gas-source molecular-beam epitaxy S Sambonsuge, E Saito, MH Jung, H Fukidome, S Filimonov, M Suemitsu Materials Science Forum 740, 339-343, 2013 | 10 | 2013 |
| Kinetics of two-dimensional island nucleation on reconstructed surfaces SN Filimonov, YY Hervieu Physical Review B 85 (4), 045423, 2012 | 9 | 2012 |
| Molecular seesaw: Intricate dynamics and versatile chemistry of heteroaromatics on metal surfaces SN Filimonov, W Liu, A Tkatchenko The Journal of Physical Chemistry Letters 8 (6), 1235-1240, 2017 | 8 | 2017 |
| Silicon carbide on silicon (110): surface structure and mechanisms of epitaxial growth S Sambonsuge, LN Nikitina, YY Hervieu, M Suemitsu, SN Filimonov Russian Physics Journal 56, 1439-1444, 2014 | 8 | 2014 |
| Kinetics of step propagation at the sidewalls of 3d islands and nanowires SN Filimonov, YY Hervieu e-Journal of Surface Science and Nanotechnology 12, 68-74, 2014 | 8 | 2014 |
