Sangwoo Kang

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Hema C. P. MovvaIntel CorporationAdresse e-mail validée de intel.com
Emanuel TutucProfessor, The University of Texas at AustinAdresse e-mail validée de mer.utexas.edu
Kyounghwan KimAppleAdresse e-mail validée de utexas.edu
Babak FallahazadIntel CorporationAdresse e-mail validée de intel.com
Amritesh RaiFront End Process Integration Engineer @ Intel Corp, UT Austin, Ohio StateAdresse e-mail validée de utexas.edu
Byung Gook ParkProfessor of Electrical Engineering, Seoul National UniversityAdresse e-mail validée de snu.ac.kr
Stefano LarentisFA Engineer @ NXP SemiconductorsAdresse e-mail validée de utexas.edu
Kayoung LeeKAISTAdresse e-mail validée de kaist.ac.kr
Amithraj ValsarajIntel, The University of Texas at AustinAdresse e-mail validée de utexas.edu
Anupam RoyThe University of Texas at AustinAdresse e-mail validée de austin.utexas.edu
Hyungcheol ShinSeoul National University, Department of Electrical and Computer EngineeringAdresse e-mail validée de snu.ac.kr
rudresh ghoshUniversity of Texas at AustinAdresse e-mail validée de utexas.edu
Samaresh GuchhaitHoward University, Washington, DCAdresse e-mail validée de Howard.edu
Sushant SondeUT Austin, CNR-IMM, IMECAdresse e-mail validée de austin.utexas.edu
Brian LeRoyUniversity of ArizonaAdresse e-mail validée de email.arizona.edu
Shengqiang HuangUniversity of ArizonaAdresse e-mail validée de email.arizona.edu
Matthew YankowitzUniversity of WashingtonAdresse e-mail validée de uw.edu
Nitin PrasadUniversity of Maryland and National Institute of Standards and TechnologyAdresse e-mail validée de nist.gov
Woo Young ChoiProfessor, Department of Electronic Engineering, Sogang UniversityAdresse e-mail validée de sogang.ac.kr
Jiwon ChangYonsei UniversityAdresse e-mail validée de yonsei.ac.kr

Sangwoo Kang

Intel Corporation

Adresse e-mail validée de intel.com - Page d'accueil

Semiconductor Devices


Titre Trier par citations Trier par année Trier par titre	Citée par Citée par	Année
van der Waals heterostructures with high accuracy rotational alignment K Kim, M Yankowitz, B Fallahazad, S Kang, HCP Movva, S Huang, ... Nano letters 16 (3), 1989-1995, 2016	363	2016
High-Mobility Holes in Dual-Gated WSe₂ Field-Effect Transistors HCP Movva, A Rai, S Kang, K Kim, B Fallahazad, T Taniguchi, ... ACS nano 9 (10), 10402-10410, 2015	213	2015
Air Stable Doping and Intrinsic Mobility Enhancement in Monolayer by Amorphous Encapsulation A Rai, A Valsaraj, HCP Movva, A Roy, R Ghosh, S Sonde, S Kang, ... arXiv preprint arXiv:1604.06850, 2016	166*	2016
Gate-tunable resonant tunneling in double bilayer graphene heterostructures B Fallahazad, K Lee, S Kang, J Xue, S Larentis, C Corbet, K Kim, ... Nano letters 15 (1), 428-433, 2015	159	2015
Bilayer graphene-hexagonal boron nitride heterostructure negative differential resistance interlayer tunnel FET S Kang, B Fallahazad, K Lee, H Movva, K Kim, CM Corbet, T Taniguchi, ... IEEE Electron Device Letters 36 (4), 405-407, 2015	63	2015
Effects of Electrode Layer Band Structure on the Performance of Multi-Layer Graphene-hBN-Graphene Interlayer Tunnel Field Effect Transistors S Kang, N Prasad, HCP Movva, A Rai, K Kim, X Mou, T Taniguchi, ... Nano Letters 16 (8), 4975-4981, 2016	35	2016
Self-aligned dual-gate single-electron transistors S Kang, DH Kim, IH Park, JH Kim, JE Lee, JD Lee, BG Park Japanese Journal of Applied Physics 47 (4S), 3118, 2008	19	2008
Room Temperature Gate-tunable Negative Differential Resistance in MoS2/hBN/WSe2 Heterostructures HCP Movva, S Kang, A Rai, K Kim, B Fallahazad, T Taniguchi, ... 2016 74th Annual Device Research Conference (DRC), 2016	17	2016
Influence of electron-beam lithography exposure current level on the transport characteristics of graphene field effect transistors S Kang, HCP Movva, A Sanne, A Rai, SK Banerjee Journal of Applied Physics 119 (12), 124502, 2016	17	2016
Fabrication and characterization of fin SONOS flash memory with separated double-gate structure JG Yun, Y Kim, IH Park, JH Lee, S Kang, DH Lee, S Cho, DH Kim, GS Lee, ... Solid-state electronics 52 (10), 1498-1504, 2008	15	2008
Fabrication and characteristics of self-aligned dual-gate single-electron transistors DS Lee, S Kang, KC Kang, JE Lee, JH Lee, KJ Song, DM Kim, JD Lee, ... IEEE transactions on nanotechnology 8 (4), 492-497, 2009	13	2009
Interlayer tunnel field-effect transistor (ITFET): physics, fabrication and applications S Kang, X Mou, B Fallahazad, N Prasad, X Wu, A Valsaraj, HCP Movva, ... Journal of Physics D: Applied Physics 50 (38), 383002, 2017	10	2017
ACS Nano 9, 10402 (2015) HCP Movva, A Rai, S Kang, K Kim, B Fallahazad, T Taniguchi, ...	10
ReS₂-based interlayer tunnel field effect transistor OB Mohammed, HCP Movva, N Prasad, A Valsaraj, S Kang, CM Corbet, ... Journal of Applied Physics 122 (24), 245701, 2017	9	2017
Capacitorless dynamic random access memory cell with highly scalable surrounding gate structure H Jeong, YS Lee, S Kang, IH Park, WY Choi, H Shin, JD Lee, BG Park Japanese journal of applied physics 46 (4S), 2143, 2007	9	2007
Poly (methyl methacrylate) as a self-assembled gate dielectric for graphene field-effect transistors A Sanne, HCP Movva, S Kang, C McClellan, CM Corbet, SK Banerjee Applied Physics Letters 104 (8), 083106, 2014	8	2014
Improving the endurance characteristics through boron implant at active edge in 1 G nand flash D Kang, S Chang, S Seo, Y Song, H Yoon, E Lee, D Chang, W Lee, ... 2007 IEEE International Reliability Physics Symposium Proceedings. 45th …, 2007	6	2007
Capacitorless DRAM Cell with Highly Scalable Surrounding Gate Structure H Jeong, YS Lee, S Kang, IH Park, WY Choi, H Shin, JD Lee, BG Park SOLID STATE DEVICES AND MATERIALS 2006, 574, 2006	5	2006
Analytical modeling of field-induced interband tunneling-effect transistors and its application SH Song, KR Kim, S Kang, JH Kim, J Im Huh, KC Kang, KW Song, JD Lee, ... IEEE transactions on nanotechnology 5 (3), 192-200, 2006	5	2006
Poly-silicon quantum dot single electron transistors KC Kang, S Kang, HS Yang, S Song, J Kim, JD Lee, BG Park 2007 International Semiconductor Device Research Symposium, 1-2, 2007	3*	2007

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