Gwan-Hyoung Lee

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Coauteurs

James C. HoneDepartment of Mechanical Engineering, Columbia UniversityAdresse e-mail validée de columbia.edu
Chul-Ho LeeAssociate Professor, Korea UniversityAdresse e-mail validée de korea.ac.kr
Philip KimHarvard UniversityAdresse e-mail validée de g.harvard.edu
Arend van der ZandeDepartment of Mechanical Science and Engineering, University of Illinois at Urbana ChampaignAdresse e-mail validée de illinois.edu
Tony F HeinzDepts. of Applied Physics, Photon Science, and, by courtesy, of Electrical Eng., SLAC, StanfordAdresse e-mail validée de stanford.edu
Kenji WatanabeNational Institute for Materials ScienceAdresse e-mail validée de nims.go.jp
Changgu LeeSungkyunkwan UniversityAdresse e-mail validée de skku.edu
Pinshane Y. HuangAssociate Professor of Materials Science, University of IllinoisAdresse e-mail validée de illinois.edu
Young-Jun YuAssociate Professor, Department of Physics, Chungnam National UniversityAdresse e-mail validée de cnu.ac.kr
T.TaniguchiNational Institute for Materials ScienceAdresse e-mail validée de nims.go.jp
Jong Hun KimSeoul National UniversityAdresse e-mail validée de snu.ac.kr
Junyoung KwonSamsung Advanced Institute of TechnologyAdresse e-mail validée de samsung.com
Sunwoo LeePost Doctorate Researcher, Cornell UniversityAdresse e-mail validée de cornell.edu
Young Duck KimAssociate Professor, Department of Physics, Kyung Hee University, Seoul 02447, Republic of KoreaAdresse e-mail validée de khu.ac.kr
David A MullerProfessor of Applied and Engineering Physics, Cornell UniversityAdresse e-mail validée de cornell.edu
Yilei LiDepartment of Physics, Stanford UniversityAdresse e-mail validée de stanford.edu
Lei WangColumbia UniversityAdresse e-mail validée de columbia.edu
Kenneth ShepardLau Family Professor of Electrical Engineering and Professor of Biomedical Engineering, ColumbiaAdresse e-mail validée de ee.columbia.edu
Andrea CapassoResearcher, International Iberian Nanotechnology Laboratory - andrea.capasso@inl.intAdresse e-mail validée de inl.int
Nicholas PetroneDepartment of Mechanical Engineering, Columbia UniversityAdresse e-mail validée de columbia.edu

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Gwan-Hyoung Lee

Professor, Materials Science and Engineering, Seoul National University

Adresse e-mail validée de snu.ac.kr - Page d'accueil

two-dimensional materials


Titre Trier par citations Trier par année Trier par titre	Citée par Citée par	Année
Tightly bound trions in monolayer MoS2 KF Mak, K He, C Lee, GH Lee, J Hone, TF Heinz, J Shan Nature materials 12 (3), 207-211, 2012	2664	2012
Grains and grain boundaries in highly crystalline monolayer molybdenum disulphide AM van der Zande, PY Huang, DA Chenet, TC Berkelbach, YM You, ... Nature materials 12, 554–561, 2013	2113	2013
Atomically thin pn junctions with van der Waals heterointerfaces CH Lee, GH Lee, AM van der Zande, W Chen, Y Li, M Han, X Cui, G Arefe, ... Nature Nanotechnology 9, 676-681, 2014	2036	2014
Multi-terminal transport measurements of MoS2 using a van der Waals heterostructure device platform X Cui, GH Lee, YD Kim, G Arefe, PY Huang, CH Lee, DA Chenet, X Zhang, ... Nature Nanotechnology, 2015	1169	2015
Flexible and Transparent MoS2 Field-Effect Transistors on Hexagonal Boron Nitride-Graphene Heterostructures GH Lee, YJ Yu, X Cui, N Petrone, CH Lee, MS Choi, DY Lee, C Lee, ... ACS nano 7 (9), 7931-7936, 2013	1103	2013
High-Strength Chemical-Vapor–Deposited Graphene and Grain Boundaries GH Lee, RC Cooper, SJ An, S Lee, A van der Zande, N Petrone, ... Science 340 (6136), 1073-1076, 2013	898	2013
Controlled charge trapping by molybdenum disulphide and graphene in ultrathin heterostructured memory devices MS Choi, GH Lee, YJ Yu, DY Lee, SH Lee, P Kim, J Hone, WJ Yoo Nature communications 4, 1624, 2013	665	2013
Effect of defects on the intrinsic strength and stiffness of graphene A Zandiatashbar, GH Lee, SJ An, S Lee, N Mathew, M Terrones, ... Nature communications 5, 3186, 2014	608	2014
Electron tunneling through atomically flat and ultrathin hexagonal boron nitride GH Lee, YJ Yu, C Lee, C Dean, KL Shepard, P Kim, J Hone Applied Physics Letters 99 (24), 243114, 2011	512	2011
Highly Stable, Dual-Gated MoS2 Transistors Encapsulated by Hexagonal Boron Nitride with Gate-Controllable Contact, Resistance, and Threshold Voltage GH Lee, X Cui, YD Kim, G Arefe, X Zhang, CH Lee, F Ye, K Watanabe, ... ACS nano 9 (7), 7019-7026, 2015	369	2015
Graphene mechanical oscillators with tunable frequency C Chen, S Lee, VV Deshpande, GH Lee, M Lekas, K Shepard, J Hone Nature nanotechnology 8 (12), 923-927, 2013	296	2013
Measurement of Lateral and Interfacial Thermal Conductivity of Single-and Bilayer MoS2 and MoSe2 Using Refined Optothermal Raman Technique X Zhang, D Sun, Y Li, GH Lee, X Cui, D Chenet, Y You, TF Heinz, ... ACS Applied Materials & Interfaces 7 (46), 25923-25929, 2015	281	2015
Graphene based heterostructures C Dean, AF Young, L Wang, I Meric, GH Lee, K Watanabe, T Taniguchi, ... Solid State Communications 152 (15), 1275-1282, 2012	241	2012
Effect of surface morphology on friction of graphene on various substrates DH Cho, L Wang, JS Kim, GH Lee, ES Kim, S Lee, SY Lee, J Hone, C Lee Nanoscale 5 (7), 3063-3069, 2013	165	2013
Tunable Electrical and Optical Characteristics in Monolayer Graphene and Few-Layer MoS₂ Heterostructure Devices S Rathi, I Lee, D Lim, J Wang, Y Ochiai, N Aoki, K Watanabe, T Taniguchi, ... Nano letters 15 (8), 5017-5024, 2015	151	2015
Thickness-dependent Schottky barrier height of MoS2 field-effect transistors J Kwon, JY Lee, YJ Yu, CH Lee, X Cui, J Hone, GH Lee Nanoscale 9 (18), 6151-6157, 2017	136	2017
2D semiconducting materials for electronic and optoelectronic applications: potential and challenge S Kang, D Lee, J Kim, A Capasso, HS Kang, JW Park, CH Lee, GH Lee 2D Materials 7 (2), 022003, 2020	132	2020
Inking Elastomeric Stamps with Micro‐Patterned, Single Layer Graphene to Create High‐Performance OFETs SJ Kang, B Kim, KS Kim, Y Zhao, Z Chen, GH Lee, J Hone, P Kim, ... Advanced Materials 23 (31), 3531-3535, 2011	132	2011
Two-Dimensional Semiconductor Optoelectronics Based on van der Waals Heterostructures JY Lee, JH Shin, GH Lee, CH Lee Nanomaterials 6 (11), 193, 2016	117	2016
Homogeneous 2D MoTe₂ p–n Junctions and CMOS Inverters formed by Atomic‐Layer‐Deposition‐Induced Doping JY Lim, A Pezeshki, S Oh, JS Kim, YT Lee, S Yu, DK Hwang, GH Lee, ... Advanced Materials 29 (30), 1701798, 2017	100	2017

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