| Normally off GaN MOSFET based on AlGaN/GaN heterostructure with extremely high 2DEG density grown on silicon substrate KS Im, JB Ha, KW Kim, JS Lee, DS Kim, SH Hahm, JH Lee IEEE Electron Device Letters 31 (3), 192-194, 2010 | 203 | 2010 |
| IEEE Trans. Electron Devices JT Park, DI Park, SH Hahm, JH Lee, HC Choi, JH Lee IEEE Trans. Electron Devices 39 (1694), 1992 | 91 | 1992 |
| A normally off GaN n-MOSFET with Schottky-barrier source and drain on a Si-auto-doped p-GaN/Si HB Lee, HI Cho, HS An, YH Bae, MB Lee, JH Lee, SH Hahm IEEE electron device letters 27 (2), 81-83, 2006 | 66 | 2006 |
| Formation of low-resistivity nickel silicide with high temperature stability from atomic-layer-deposited nickel thin film KW Do, CM Yang, IS Kang, KM Kim, KH Back, HI Cho, HB Lee, SH Kong, ... Japanese journal of applied physics 45 (4S), 2975, 2006 | 62 | 2006 |
| Formation of low-resistivity nickel silicide with high temperature stability from atomic-layer-deposited nickel thin film KW Do, CM Yang, IS Kang, KM Kim, KH Back, HI Cho, HB Lee, SH Kong, ... Japanese journal of applied physics 45 (4S), 2975, 2006 | 62 | 2006 |
| Semiconductor device with schottky contact and method for forming the same SH Lee, YH Lee, JH Lee, SH Hahm US Patent 6,656,823, 2003 | 54 | 2003 |
| Fabrication of a lateral field emission triode with a high current density and high transconductance using the local oxidation of the polysilicon layer SS Park, DI Park, SH Hahm, JH Lee, HC Choi, JH Lee IEEE Transactions on Electron Devices 46 (6), 1283-1289, 1999 | 48 | 1999 |
| Nanometer-scale gap control for low voltage and high current operation of field emission array HI Lee, SS Park, DI Park, SH Hahm, JH Lee, JH Lee Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 1998 | 48 | 1998 |
| Nanometer-scale gap control for low voltage and high current operation of field emission array HI Lee, SS Park, DI Park, SH Hahm, JH Lee, JH Lee Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 1998 | 48 | 1998 |
| Growth of semi-insulating GaN layer by controlling size of nucleation sites for SAW device applications JH Lee, MB Lee, SH Hahm, YH Lee, JH Lee, YH Bae, HK Cho MRS Internet Journal of Nitride Semiconductor Research 8, 1-9, 2003 | 28 | 2003 |
| Selectively Enhanced UV-A Photoresponsivity of a GaN MSM UV Photodetector with a Step-Graded AlxGa1−xN Buffer Layer CJ Lee, CH Won, JH Lee, SH Hahm, H Park Sensors 17 (7), 1684, 2017 | 27 | 2017 |
| RuO2/GaN Schottky contact formation with superior forward and reverse characteristics SH Lee, JK Chun, JJ Hur, JS Lee, GH Rue, YH Bae, SH Hahm, YH Lee, ... IEEE Electron Device Letters 21 (6), 261-263, 2000 | 27 | 2000 |
| Effectiveness of self-carbon and titanium capping layers in NiSi formation with Ni film deposited by atomic layer deposition CM Yang, SW Yun, JB Ha, KI Na, HI Cho, HB Lee, JH Jeong, SH Kong, ... Japanese journal of applied physics 46 (4S), 1981, 2007 | 26 | 2007 |
| GaN metal–semiconductor–metal UV sensor with multi-layer graphene as Schottky electrodes CJ Lee, SB Kang, HG Cha, CH Won, SK Hong, BJ Cho, H Park, JH Lee, ... Japanese Journal of Applied Physics 54 (6S1), 06FF08, 2015 | 24 | 2015 |
| Enhanced electrical characteristics of AlGaN/GaN heterostructure field-effect transistor with p-GaN back barriers and Si delta-doped layer HC Lee, SY Hyun, HI Cho, C Ostermaier, KW Kim, SI Ahn, KI Na, JB Ha, ... Japanese journal of applied physics 47 (4S), 2824, 2008 | 24 | 2008 |
| Effect of Al doping in GaN films grown by metalorganic chemical vapor deposition JH Lee, SH Hahm, JH Lee, SB Bae, KS Lee, YH Cho, JL Lee Applied physics letters 83 (5), 917-919, 2003 | 24 | 2003 |
| Dual-wavelength sensitive AlGaN/GaN metal-insulator-semiconductor-insulator-metal ultraviolet sensor with balanced ultraviolet/visible rejection ratios CJ Lee, YJ Kwon, CH Won, JH Lee, SH Hahm Applied Physics Letters 103 (11), 2013 | 22 | 2013 |
| Emission behavior of nm-thick Al2O3 film-based planar cold cathodes for electronic cooling MB Lee, SH Hahm, JH Lee, YH Song Applied Physics Letters 86 (12), 2005 | 21 | 2005 |
| Normally-off GaN MOSFETs on insulating substrate DS Kim, KS Im, KW Kim, HS Kang, DK Kim, SJ Chang, Y Bae, SH Hahm, ... Solid-state electronics 90, 79-85, 2013 | 19 | 2013 |
| Effect of growth temperature on the structural and electrical properties of ZrO2 films fabricated by atomic layer deposition using a CpZr [N (CH3) 2] 3/C7H8 cocktail precursor JK An, NK Chung, JT Kim, SH Hahm, G Lee, SB Lee, T Lee, IS Park, ... Materials 11 (3), 386, 2018 | 18 | 2018 |
