Nikita Gordeev
TitleCited byYear
Direct formation of vertically coupled quantum dots in Stranski-Krastanow growth
NN Ledentsov, VA Shchukin, ME Grundmann, N Kirstaedter, J B÷hrer, ...
Physical Review B 54 (12), 8743, 1996
5971996
Negative characteristic temperature of InGaAs quantum dot injection laser
AE Zhukov, VM Ustinov, AY Egorov, AR Kovsh, AF Tsatsul, NN Ledentsov, ...
Japanese journal of applied physics 36 (6S), 4216, 1997
1081997
Low-threshold injection lasers based on vertically coupled quantum dots
VM Ustinov, AY Egorov, AR Kovsh, AE Zhukov, MV Maximov, ...
Journal of crystal growth 175, 689-695, 1997
1001997
InGaAs/GaAs Quantum Dot Lasers with Ultrahigh Characteristic Temperature
MV Maximov, IV Kochnev, YM Shernyakov, SV Zaitsev, NY Gordeev, ...
Jpn. J. Appl. Phys 36, 4221-4223, 1997
861997
Low threshold quantum dot injection laser emitting at 1.9/spl mu/m
VM Ustinov, AE Zhukov, AY Egorov, AR Kovsh, SV Zaitsev, NY Gordeev, ...
Electronics letters 34 (7), 670-672, 1998
731998
High-power single mode continuous wave operation of longitudinal photonic band crystal lasers with a narrow vertical beam divergence
II Novikov, NY Gordeev, YM Shernyakov, YY Kiselev, MV Maximov, ...
Applied Physics Letters 92 (10), 103515, 2008
452008
High-power singlemode CW operation of 1.5/spl mu/m-range quantum dot GaAs-based laser
LY Karachinsky, T Kettler, NY Gordeev, II Novikov, MV Maximov, ...
Electronics Letters 41 (8), 478-480, 2005
422005
A 1.33 Ám InAs/GaAs quantum dot laser with a 46 cm− 1 modal gain
MV Maximov, VM Ustinov, AE Zhukov, NV Kryzhanovskaya, AS Payusov, ...
Semiconductor Science and Technology 23 (10), 105004, 2008
412008
Injection lasers based on InGaAs quantum dots in an AlGaAs matrix
AE Zhukov, VM Ustinov, AY Egorov, AR Kovsh, AF Tsatsul’nikov, ...
Journal of electronic materials 27 (3), 106-109, 1998
401998
Time-resolved photoluminescence measurements of InAs self-assembled quantum dots grown on misorientated substrates
LY Karachinsky, S Pellegrini, GS Buller, AS Shkolnik, NY Gordeev, ...
Applied physics letters 84 (1), 7-9, 2004
392004
Metamorphic 1.5 Ám-range quantum dot lasers on a GaAs substrate
LY Karachinsky, T Kettler, II Novikov, YM Shernyakov, NY Gordeev, ...
Semiconductor science and technology 21 (5), 691, 2006
382006
A low-threshold injection heterojunction laser based on quantum dots, produced by gas-phase epitaxy from organometallic compounds
ZI Alferov, NY Gordeev, SV Zaitsev, PS Kop'ev, IV Kochnev, VV Komin, ...
Semiconductors 30, 197-200, 1996
381996
High-performance 640-nm-range GaInP-AlGaInP lasers based on the longitudinal photonic bandgap crystal with narrow vertical beam divergence
MV Maximov, YM Shernyakov, II Novikov, SM Kuznetsov, LY Karachinsky, ...
IEEE journal of quantum electronics 41 (11), 1341-1348, 2005
352005
High-power high-brightness semiconductor lasers based on novel waveguide concepts
D Bimberg, K Posilovic, V Kalosha, T Kettler, D Seidlitz, VA Shchukin, ...
Novel In-Plane Semiconductor Lasers IX 7616, 76161I, 2010
332010
High-power low-beam divergence edge-emitting semiconductor lasers with 1-and 2-D photonic bandgap crystal waveguide
MV Maximov, YM Shernyakov, II Novikov, LY Karachinsky, NY Gordeev, ...
IEEE Journal of Selected Topics in Quantum Electronics 14 (4), 1113-1122, 2008
322008
InAs/GaAs quantum dots grown by metalorganic chemical vapor deposition
F Heinrichsdorff, A Krost, N Kirstaedter, MH Mao, M Grundmann, ...
Japanese journal of applied physics 36 (6S), 4129, 1997
311997
Quantum dot injection heterolaser with ultrahigh thermal stability of the threshold current up to 50 C
MV Maksimov, NY Gordeev, SV Zaitsev, PS Kop’ev, IV Kochnev, ...
Semiconductors 31 (2), 124-126, 1997
311997
Single mode cw operation of AlGaInP lasers based on longitudinal photonic band gap crystal
II Novikov, LY Karachinsky, MV Maximov, YM Shernyakov, SM Kuznetsov, ...
Applied physics letters 88 (23), 231108, 2006
292006
Effect of p-doping of the active region on the temperature stability of InAs/GaAs QD lasers
II Novikov, NY Gordeev, LY Karachinskii, MV Maksimov, YM Shernyakov, ...
Semiconductors 39 (4), 477-480, 2005
292005
Degradation-robust single mode continuous wave operation of metamorphic quantum dot lasers on GaAs substrate
T Kettler, LY Karachinsky, NN Ledentsov, VA Shchukin, G Fiol, M Kuntz, ...
Applied physics letters 89 (4), 041113, 2006
282006
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