| SiGe HBTs and BiCMOS technology for present and future millimeter-wave systems T Zimmer, J Böck, F Buchali, P Chevalier, M Collisi, B Debaillie, M Deng, ... IEEE Journal of Microwaves 1 (1), 288-298, 2021 | 41 | 2021 |
| On-wafer characterization of silicon transistors up to 500 GHz and analysis of measurement discontinuities between the frequency bands S Fregonese, M Deng, M Potereau, C Ayela, K Aufinger, T Zimmer IEEE Transactions on Microwave Theory and Techniques 66 (7), 3332-3341, 2018 | 38 | 2018 |
| Comparison of on-wafer TRL calibration to ISS SOLT calibration with open-short de-embedding up to 500 GHz S Fregonese, M Deng, M De Matos, C Yadav, S Joly, B Plano, C Raya, ... IEEE Transactions on Terahertz Science and Technology 9 (1), 89-97, 2018 | 33 | 2018 |
| Importance and Requirement of frequency band specific RF probes EM Models in sub-THz and THz Measurements up to 500 GHz C Yadav, M Deng, S Fregonese, M Cabbia, M De Matos, B Plano, ... IEEE Transactions on Terahertz Science and Technology 10 (5), 558-563, 2020 | 21 | 2020 |
| Small-signal characterization and modelling of 55 nm SiGe BiCMOS HBT up to 325 GHz M Deng, T Quémerais, S Bouvot, D Gloria, P Chevalier, S Lépilliet, ... Solid-State Electronics 129, 150-156, 2017 | 18 | 2017 |
| Scalable Compact Modeling of III–V DHBTs: Prospective Figures of Merit Toward Terahertz Operation C Mukherjee, C Raya, B Ardouin, M Deng, S Fregonese, T Zimmer, ... IEEE Transactions on Electron Devices 65 (12), 5357-5364, 2018 | 17 | 2018 |
| Impact of on-Silicon de-embedding test structures and RF probes design in the Sub-THz range C Yadav, M Deng, S Fregonese, M DeMatos, B Plano, T Zimmer 2018 48th European Microwave Conference (EuMC), 21-24, 2018 | 15 | 2018 |
| Analysis of High-Frequency Measurement of Transistors Along With Electromagnetic and SPICE Cosimulation S Fregonese, M Cabbia, C Yadav, M Deng, SR Panda, M De Matos, ... IEEE Transactions on Electron Devices 67 (11), 4770-4776, 2020 | 12 | 2020 |
| A Multiscale TCAD Approach for the Simulation of InP DHBTs and the Extraction of Their Transit Times X Wen, C Mukherjee, C Raya, B Ardouin, M Deng, S Frégonèse, ... IEEE Transactions on Electron Devices 66 (12), 5084-5090, 2019 | 12 | 2019 |
| Towards Monolithic Indium Phosphide (InP)-Based Electronic Photonic Technologies for beyond 5G Communication Systems C Mukherjee, M Deng, V Nodjiadjim, M Riet, C Mismer, D Guendouz, ... Applied Sciences 11 (5), 2393, 2021 | 11 | 2021 |
| 2D-Graphene Epitaxy on SiC for RF Application: Fabrication, Electrical Characterization and Noise Performance D Fadil, W Wei, M Deng, S Fregonese, W Strupinski, E Pallecchi, H Happy 2018 IEEE/MTT-S International Microwave Symposium-IMS, 228-231, 2018 | 11 | 2018 |
| Design of Silicon On-Wafer Sub-THz Calibration Kit M Deng, S Frégonèse, D Céli, P Chevalier, M De Matos, T Zimmer 2017 Mediterranean Microwave Symposium (MMS), 1-4, 2017 | 11 | 2017 |
| Millimeter-wave in situ tuner: An efficient solution to extract the noise parameters of SiGe HBTs in the whole 130–170 GHz range M Deng, L Poulain, D Gloria, T Quémerais, P Chevalier, S Lépilliet, ... IEEE Microwave and Wireless Components Letters 24 (9), 649-651, 2014 | 11 | 2014 |
| Silicon Test Structures Design for Sub-THz and THz Measurements M Cabbia, C Yadav, M Deng, S Fregonese, M De Matos, T Zimmer IEEE Transactions on Electron Devices 67 (12), 5639-5645, 2020 | 8 | 2020 |
| Contribution à la caractérisation et la modélisation jusque 325 GHz de transistors HBT des technologies BiCMOS M Deng Lille 1, 2014 | 7 | 2014 |
| TCAD and EM co-simulation method to verify SiGe HBT measurements up to 500 GHz SR Panda, S Fregonese, M Deng, A Chakravorty, T Zimmer Solid-State Electronics 174, 107915, 2020 | 6 | 2020 |
| 3D logic cells design and results based on Vertical NWFET technology including tied compact model C Mukherjee, M Deng, F Marc, C Maneux, A Poittevin, I O'Connor, ... 2020 IFIP/IEEE 28th International Conference on Very Large Scale Integration …, 2020 | 6 | 2020 |
| High-frequency noise characterization and modeling of graphene field-effect transistors M Deng, D Fadil, W Wei, E Pallecchi, H Happy, G Dambrine, M De Matos, ... IEEE Transactions on Microwave Theory and Techniques 68 (6), 2116-2123, 2020 | 6 | 2020 |
| Importance of complete characterization setup on on-wafer TRL calibration in sub-THz range C Yadav, M Deng, M De Matos, S Fregonese, T Zimmer 2018 IEEE International Conference on Microelectronic Test Structures (ICMTS …, 2018 | 6 | 2018 |
| High frequency and noise performance of GFETs W Wei, D Fadil, E Pallecchi, G Dambrine, H Happy, M Deng, S Fregonese, ... 2017 International Conference on Noise and Fluctuations (ICNF), 1-5, 2017 | 6 | 2017 |
sebastien fregoneseCR CNRS, Université de BordeauxAdresse e-mail validée de ims-bordeaux.fr
