Marina Deng
Marina Deng
Maître de conférences, Université de Bordeaux
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On-wafer characterization of silicon transistors up to 500 GHz and analysis of measurement discontinuities between the frequency bands
S Fregonese, M Deng, M Potereau, C Ayela, K Aufinger, T Zimmer
IEEE Transactions on Microwave Theory and Techniques 66 (7), 3332-3341, 2018
Comparison of on-wafer TRL calibration to ISS SOLT calibration with open-short de-embedding up to 500 GHz
S Fregonese, M Deng, M De Matos, C Yadav, S Joly, B Plano, C Raya, ...
IEEE Transactions on Terahertz Science and Technology 9 (1), 89-97, 2018
Small-signal characterization and modelling of 55 nm SiGe BiCMOS HBT up to 325 GHz
M Deng, T Quémerais, S Bouvot, D Gloria, P Chevalier, S Lépilliet, ...
Solid-State Electronics 129, 150-156, 2017
Impact of on-Silicon de-embedding test structures and RF probes design in the Sub-THz range
C Yadav, M Deng, S Fregonese, M DeMatos, B Plano, T Zimmer
2018 48th European Microwave Conference (EuMC), 21-24, 2018
Millimeter-wave in situ tuner: An efficient solution to extract the noise parameters of SiGe HBTs in the whole 130–170 GHz range
M Deng, L Poulain, D Gloria, T Quémerais, P Chevalier, S Lépilliet, ...
IEEE Microwave and Wireless Components Letters 24 (9), 649-651, 2014
2D-Graphene Epitaxy on SiC for RF Application: Fabrication, Electrical Characterization and Noise Performance
D Fadil, W Wei, M Deng, S Fregonese, W Strupinski, E Pallecchi, H Happy
2018 IEEE/MTT-S International Microwave Symposium-IMS, 228-231, 2018
Importance and Requirement of frequency band specific RF probes EM Models in sub-THz and THz Measurements up to 500 GHz
C Yadav, M Deng, S Fregonese, M Cabbia, M De Matos, B Plano, ...
IEEE Transactions on Terahertz Science and Technology 10 (5), 558-563, 2020
Scalable Compact Modeling of III–V DHBTs: Prospective Figures of Merit Toward Terahertz Operation
C Mukherjee, C Raya, B Ardouin, M Deng, S Fregonese, T Zimmer, ...
IEEE Transactions on Electron Devices 65 (12), 5357-5364, 2018
Design of Silicon On-Wafer Sub-THz Calibration Kit
M Deng, S Frégonèse, D Céli, P Chevalier, M De Matos, T Zimmer
2017 Mediterranean Microwave Symposium (MMS), 1-4, 2017
Analysis of High-Frequency Measurement of Transistors Along With Electromagnetic and SPICE Cosimulation
S Fregonese, M Cabbia, C Yadav, M Deng, SR Panda, M De Matos, ...
IEEE Transactions on Electron Devices 67 (11), 4770-4776, 2020
Importance of complete characterization setup on on-wafer TRL calibration in sub-THz range
C Yadav, M Deng, M De Matos, S Fregonese, T Zimmer
2018 IEEE International Conference on Microelectronic Test Structures (ICMTS …, 2018
Meander type transmission line design for on-wafer TRL calibration
M Potéreau, M Deng, C Raya, B Ardouin, K Aufinger, C Ayela, ...
2016 46th European Microwave Conference (EuMC), 381-384, 2016
A Multiscale TCAD Approach for the Simulation of InP DHBTs and the Extraction of Their Transit Times
X Wen, C Mukherjee, C Raya, B Ardouin, M Deng, S Frégonèse, ...
IEEE Transactions on Electron Devices 66 (12), 5084-5090, 2019
RF Characterization of 28 nm FD-SOI Transistors Up to 220 GHz
M Deng, S Fregonese, B Dorrnieu, P Scheer, M De Matos, T Zimmer
2019 Joint International EUROSOI Workshop and International Conference on …, 2019
High frequency and noise performance of GFETs
W Wei, D Fadil, E Pallecchi, G Dambrine, H Happy, M Deng, S Fregonese, ...
2017 International Conference on Noise and Fluctuations (ICNF), 1-5, 2017
Benefits and validation of 4-dummies de-embedding method for characterization of SiGe HBT in G-band
M Deng, S Lepilliet, F Danneville, G Dambrine, D Gloria, N Derrier, ...
2013 European Microwave Integrated Circuit Conference, 388-391, 2013
Contribution à la caractérisation et la modélisation jusque 325 GHz de transistors HBT des technologies BiCMOS
M Deng
Lille 1, 2014
SiGe HBTs and BiCMOS Technology for Present and Future Millimeter-Wave Systems
T Zimmer, J Böck, F Buchali, P Chevalier, M Collisi, B Debaillie, M Deng, ...
IEEE Journal of Microwaves 1 (1), 288-298, 2021
3D logic cells design and results based on Vertical NWFET technology including tied compact model
C Mukherjee, M Deng, F Marc, C Maneux, A Poittevin, I O'Connor, ...
2020 IFIP/IEEE 28th International Conference on Very Large Scale Integration …, 2020
High-frequency noise characterization and modeling of graphene field-effect transistors
M Deng, D Fadil, W Wei, E Pallecchi, H Happy, G Dambrine, M De Matos, ...
IEEE Transactions on Microwave Theory and Techniques 68 (6), 2116-2123, 2020
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