| PCMO RRAM for integrate-and-fire neuron in spiking neural networks S Lashkare, S Chouhan, T Chavan, A Bhat, P Kumbhare, U Ganguly IEEE Electron Device Letters 39 (4), 484-487, 2018 | 122 | 2018 |
| Punchthrough-diode-based bipolar RRAM selector by Si epitaxy VSS Srinivasan, S Chopra, P Karkare, P Bafna, S Lashkare, P Kumbhare, ... IEEE Electron Device Letters 33 (10), 1396-1398, 2012 | 109 | 2012 |
| PCMO-based RRAM and NPN bipolar selector as synapse for energy efficient STDP S Lashkare, N Panwar, P Kumbhare, B Das, U Ganguly IEEE Electron Device Letters 38 (9), 1212-1215, 2017 | 49 | 2017 |
| Self-Heating During submicrosecond Current Transients in Pr0.7Ca0.3MnO3-Based RRAM N Panwar, A Khanna, P Kumbhare, I Chakraborty, U Ganguly IEEE Transactions on Electron Devices 64 (1), 137-144, 2016 | 32 | 2016 |
| Memory Performance of a Simple Pr0.7Ca0.3MnO3-Based Selectorless RRAM P Kumbhare, I Chakraborty, A Khanna, U Ganguly IEEE Transactions on Electron Devices 64 (9), 3967-3970, 2017 | 31 | 2017 |
| A selectorless RRAM with record memory window and nonlinearity based on trap filled limit mechanism P Kumbhare, I Chakraborty, AK Singh, S Chouhan, N Panwar, U Ganguly 2015 15th Non-Volatile Memory Technology Symposium (NVMTS), 1-3, 2015 | 22 | 2015 |
| PrxCa1− xMnO3 based stochastic neuron for Boltzmann machine to solve “maximum cut” problem D Khilwani, V Moghe, S Lashkare, V Saraswat, P Kumbhare, ... APL Materials 7 (9), 2019 | 20 | 2019 |
| Co active electrode enhances CBRAM performance and scaling potential A Belmonte, J Radhakrishnan, L Goux, GL Donadio, P Kumbhare, ... 2019 IEEE International Electron Devices Meeting (IEDM), 35.8. 1-35.8. 4, 2019 | 19 | 2019 |
| Electrical investigation of wake-up in high endurance fatigue-free La and Y doped HZO metal–ferroelectric–metal capacitors AM Walke, MI Popovici, K Banerjee, S Clima, P Kumbhare, J Desmet, ... IEEE Transactions on Electron Devices 69 (8), 4744-4749, 2022 | 18 | 2022 |
| A highly reliable and unbiased PUF based on differential OTP memory S Sadana, A Lele, S Tsundus, P Kumbhare, U Ganguly IEEE Electron Device Letters 39 (8), 1159-1162, 2018 | 18 | 2018 |
| Transient joule heating-based oscillator neuron for neuromorphic computing S Lashkare, P Kumbhare, V Saraswat, U Ganguly IEEE Electron Device Letters 39 (9), 1437-1440, 2018 | 16 | 2018 |
| Materials parameter extraction using analytical models in PCMO based RRAM I Chakraborty, AK Singh, P Kumbhare, N Panwar, U Ganguly 2015 73rd Annual Device Research Conference (DRC), 87-88, 2015 | 15 | 2015 |
| Ionic Transport Barrier Tuning by Composition in Pr1–xCaxMnO3-Based Selector-Less RRAM and Its Effect on Memory Performance P Kumbhare, U Ganguly IEEE Transactions on Electron Devices 65 (6), 2479-2484, 2018 | 14 | 2018 |
| Effect of Morphological Change on Unipolar and Bipolar Switching Characteristics in Pr0.7Ca0.3MnO3 Based RRAM N Panwar, P Kumbhare, AK Singh, N Venkataramani, U Ganguly MRS Online Proceedings Library 1729, 47-52, 2014 | 12 | 2014 |
| Effect of thermal resistance and scaling on dc-IV characteristics of PCMO based RRAM devices S Chouhan, P Kumbhare, A Khanna, N Panwar, U Ganguly 2017 75th Annual Device Research Conference (DRC), 1-2, 2017 | 9 | 2017 |
| Pr1-xCaxMnO3 Based Selector, RRAM and Self-selecting Selectorless RRAM: A Composition Study P Kumbhare, S Chouhan, U Ganguly 2015 73rd Annual Device Research Conference (DRC), 2016 | 9 | 2016 |
| Transient joule heating in PrMno3 RRAM enables ReLu type neuron S Lashkare, A Bhat, P Kumbhare, U Ganguly 2018 Non-Volatile Memory Technology Symposium (NVMTS), 1-4, 2018 | 5 | 2018 |
| Impact of La–OH bonds on the retention of Co/LaSiO CBRAM J Radhakrishnan, A Belmonte, L Nyns, W Devulder, G Vereecke, ... Applied Physics Letters 117 (15), 2020 | 4 | 2020 |
| Fundamental Limit on Network Size Scaling of Oscillatory Neural Networks due to PrMnO3 based Oscillator Phase Noise V Saraswat, S Lashkare, P Kumbhare, U Ganguly 2019 Device Research Conference (DRC), 195-196, 2019 | 4 | 2019 |
| PrxCa1–xMnO3-Based Memory and Si Time-Keeping Selector for Area and Energy Efficient Synapse B Das, A Lele, P Kumbhare, J Schulze, U Ganguly IEEE Electron Device Letters 40 (6), 850-853, 2019 | 4 | 2019 |
Udayan GangulyProfessor, Electrical Engineering, IIT BombayAdresse e-mail validée de ee.iitb.ac.in
