| Single-photon emitting diode in silicon carbide A Lohrmann, N Iwamoto, Z Bodrog, S Castelletto, T Ohshima, TJ Karle, ... Nature communications 6, 7783, 2015 | 226 | 2015 |
| Physics and Technology of Silicon Carbide Devices ed Y T Ohshima, S Onoda, N Iwamoto, T Makino, M Arai, Y Tanaka Hijikata (Rijeka: InTech) Chap 16, 2013 | 84* | 2013 |
| Defect-induced performance degradation of 4H-SiC Schottky barrier diode particle detectors N Iwamoto, BC Johnson, N Hoshino, M Ito, H Tsuchida, K Kojima, ... Journal of Applied Physics 113 (14), 143714, 2013 | 41 | 2013 |
| Transient response of charge collection by single ion strike in 4H-SiC MESFETs S Onoda, N Iwamoto, S Ono, S Katakami, M Arai, K Kawano, T Ohshima IEEE Transactions on Nuclear Science 56 (6), 3218-3222, 2009 | 34 | 2009 |
| Continuous observation of polarization effects in thin SC-CVD diamond detector designed for heavy ion microbeam measurement W Kada, N Iwamoto, T Satoh, S Onoda, V Grilj, N Skukan, M Koka, ... Nuclear Instruments and Methods in Physics Research Section B: Beam …, 2014 | 33 | 2014 |
| An ultra-thin diamond membrane as a transmission particle detector and vacuum window for external microbeams V Grilj, N Skukan, M Pomorski, W Kada, N Iwamoto, T Kamiya, T Ohshima, ... Applied Physics Letters 103 (24), 243106, 2013 | 27 | 2013 |
| Heavy-ion induced anomalous charge collection from 4H-SiC schottky barrier diodes T Makino, M Deki, N Iwamoto, S Onoda, N Hoshino, H Tsuchida, T Hirao, ... IEEE Transactions on Nuclear Science 60 (4), 2647-2650, 2013 | 27 | 2013 |
| Point Defects in Silicon Carbide N Iwamoto, BG Svensson Semiconductors and Semimetals 91, 369-407, 2015 | 25 | 2015 |
| Decrease of charge collection due to displacement damage by gamma rays in a 6H-SiC diode S Onoda, T Ohshima, T Hirao, K Mishima, S Hishiki, N Iwamoto, K Kojima, ... IEEE Transactions on Nuclear Science 54 (6), 1953-1960, 2007 | 24 | 2007 |
| Radiation response of silicon carbide diodes and transistors T Ohshima, S Onoda, N Iwamoto, T Makino, M Arai, Y Tanaka Physics and Technology of Silicon Carbide Devices, 2012 | 23 | 2012 |
| Radiation response of silicon carbide diodes and transistors T Ohshima, S Onoda, N Iwamoto, T Makino, M Arai, Y Tanaka Physics and Technology of Silicon Carbide Devices, 2012 | 23 | 2012 |
| Linear energy transfer dependence of single event gate rupture in SiC MOS capacitors M Deki, T Makino, N Iwamoto, S Onoda, K Kojima, T Tomita, T Ohshima Nuclear Instruments and Methods in Physics Research Section B: Beam …, 2014 | 21 | 2014 |
| Impact of auger recombination on charge collection of a 6H-SiC diode by heavy ions S Onoda, T Ohshima, T Hirao, K Mishima, S Hishiki, N Iwamoto, ... IEEE Transactions on Nuclear Science 54 (6), 2706-2713, 2007 | 20 | 2007 |
| Radiation hardness of n-type SiC Schottky barrier diodes irradiated with MeV He ion microbeam Ž Pastuović, I Capan, DD Cohen, J Forneris, N Iwamoto, T Ohshima, ... Nuclear Instruments and Methods in Physics Research Section B: Beam …, 2015 | 15 | 2015 |
| E1/E2 traps in 6H-SiC studied with Laplace deep level transient spectroscopy A Koizumi, VP Markevich, N Iwamoto, S Sasaki, T Ohshima, K Kojima, ... Applied Physics Letters 102 (3), 032104, 2013 | 14 | 2013 |
| Transient analysis of an extended drift region in a 6H-SiC diode formed by a single alpha particle strike and its contribution to the increased charge collection N Iwamoto, S Onoda, T Makino, T Ohshima, K Kojima, A Koizumi, ... IEEE Transactions on Nuclear Science 58 (1), 305-313, 2011 | 12 | 2011 |
| Comparative study of transient current induced in SiC p+ n and n+ p diodes by heavy ion micro beams T Ohshima, N Iwamoto, S Onoda, T Kamiya, K Kawano Nuclear Instruments and Methods in Physics Research Section B: Beam …, 2009 | 12 | 2009 |
| High temperature annealing effects on deep-level defects in a high purity semi-insulating 4H-SiC substrate N Iwamoto, A Azarov, T Ohshima, AMM Moe, BG Svensson Journal of Applied Physics 118 (4), 045705, 2015 | 10 | 2015 |
| Development of diagnostic method for deep levels in semiconductors using charge induced by heavy ion microbeams W Kada, Y Kambayashi, N Iwamoto, S Onoda, T Makino, M Koka, ... Nuclear Instruments and Methods in Physics Research Section B: Beam …, 2015 | 10 | 2015 |
| Single-Alpha-Particle-Induced Charge Transient Spectroscopy of the 6H-SiC Diode Irradiated With High-Energy Electrons N Iwamoto, A Koizumi, S Onoda, T Makino, T Ohshima, K Kojima, S Koike, ... IEEE Transactions on Nuclear Science 58 (6), 3328-3332, 2011 | 10 | 2011 |
