Atomic-layer deposition of Lu2O3 G Scarel, E Bonera, C Wiemer, G Tallarida, S Spiga, M Fanciulli, ...
Applied Physics Letters 85 (4), 630-632, 2004
136 2004 Raman spectroscopy determination of composition and strain in Si1-xGex/Si heterostructures F Pezzoli, E Bonera, E Grilli, M Guzzi, S Sanguinetti, D Chrastina, G Isella, ...
Materials science in semiconductor processing 11 (5-6), 279-284, 2008
108 2008 Combining high resolution and tensorial analysis in Raman stress measurements of silicon E Bonera, M Fanciulli, DN Batchelder
Journal of applied physics 94 (4), 2729-2740, 2003
103 2003 Phonon strain shift coefficients in Si1− xGex alloys F Pezzoli, E Bonera, E Grilli, M Guzzi, S Sanguinetti, D Chrastina, G Isella, ...
Journal of Applied Physics 103 (9), 2008
92 2008 Energy-band diagram of metal/ /silicon structures G Seguini, E Bonera, S Spiga, G Scarel, M Fanciulli
Applied physics letters 85 (22), 5316-5318, 2004
70 2004 Dielectric Properties of High- Oxides: Theory and Experiment for E Bonera, G Scarel, M Fanciulli, P Delugas, V Fiorentini
Physical review letters 94 (2), 027602, 2005
69 2005 High-yield fabrication of entangled photon emitters for hybrid quantum networking using high-temperature droplet epitaxy F Basso Basset, S Bietti, M Reindl, L Esposito, A Fedorov, D Huber, ...
Nano letters 18 (1), 505-512, 2018
61 2018 Highly Mismatched, Dislocation-Free SiGe/Si Heterostructures. F Isa, M Salvalaglio, YA Dasilva, M Meduňa, M Barget, A Jung, T Kreiliger, ...
Advanced materials (Deerfield Beach, Fla.) 28 (5), 884-888, 2015
47 2015 Raman spectroscopy for a micrometric and tensorial analysis of stress in silicon E Bonera, M Fanciulli, DN Batchelder
Applied Physics Letters 81 (18), 3377-3379, 2002
47 2002 Band alignment at the La2Hf2O7∕(001) Si interface G Seguini, S Spiga, E Bonera, M Fanciulli, A Reyes Huamantinco, ...
Applied physics letters 88 (20), 2006
34 2006 Raman spectroscopy of strain in subwavelength microelectronic devices E Bonera, M Fanciulli, M Mariani
Applied Physics Letters 87 (11), 2005
34 2005 Crystal defects and junction properties in the evolution of device fabrication technology I Mica, ML Polignano, G Carnevale, P Ghezzi, M Brambilla, F Cazzaniga, ...
Journal of Physics: Condensed Matter 14 (48), 13403, 2002
34 2002 Development of a combined confocal and scanning near‐field Raman microscope for deep UV laser excitation HS Sands, F Demangeot, E Bonera, S Webster, R Bennett, IP Hayward, ...
Journal of Raman Spectroscopy 33 (9), 730-739, 2002
34 2002 Raman efficiency in SiGe alloys A Picco, E Bonera, E Grilli, M Guzzi, M Giarola, G Mariotto, D Chrastina, ...
Physical Review B 82 (11), 115317, 2010
32 2010 Raman stress maps from finite-element models of silicon structures E Bonera, M Fanciulli, G Carnevale
Journal of applied physics 100 (3), 2006
32 2006 Strain in a single ultrathin silicon layer on top of SiGe islands: Raman spectroscopy and simulations E Bonera, F Pezzoli, A Picco, G Vastola, M Stoffel, E Grilli, M Guzzi, ...
Physical Review B 79 (7), 075321, 2009
31 2009 Structure evolution of atomic layer deposition grown ZrO2 films by deep-ultra-violet Raman and far-infrared spectroscopies E Bonera, G Scarel, M Fanciulli
Journal of non-crystalline solids 322 (1-3), 105-110, 2003
31 2003 High–temperature droplet epitaxy of symmetric GaAs/AlGaAs quantum dots S Bietti, FB Basset, A Tuktamyshev, E Bonera, A Fedorov, S Sanguinetti
Scientific Reports 10 (1), 6532, 2020
30 2020 A novel 0.16 μm—300 V SOIBCD for ultrasound medical applications M Sambi, D Merlini, P Galbiati, E Bonera, F Belletti
2011 IEEE 23rd International Symposium on Power Semiconductor Devices and …, 2011
30 2011 Time of flight secondary ion mass spectrometry study of silicon nanoclusters embedded in thin silicon oxide layers M Perego, S Ferrari, S Spiga, E Bonera, M Fanciulli, V Soncini
Applied physics letters 82 (1), 121-123, 2003
30 2003