Mustapha Diani
Mustapha Diani
Professor of Physics, Abdelmalek Essaadi University
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TitreCitée parAnnée
Search for carbon nitride CNx compounds with a high nitrogen content by electron cyclotron resonance plasma deposition
M Diani, A Mansour, L Kubler, JL Bischoff, D Bolmont
Diamond and Related Materials 3 (3), 264-269, 1994
901994
The Ge Stranski-Krastanov growth mode on Si (001)(2× 1) tested by X-ray photoelectron and Auger electron diffraction
M Diani, D Aubel, JL Bischoff, L Kubler, D Bolmont
Surface science 291 (1-2), 110-116, 1993
361993
A particular epitaxial Si1− yCy alloy growth mode on Si (001) evidenced by cross-sectional transmission electron microscopy
A Claverie, J Faure, JL Balladore, L Simon, A Mesli, M Diani, L Kubler, ...
Journal of crystal growth 157 (1-4), 420-425, 1995
271995
Experimental study of Si substitution by Ge in Ge-alloyed SiC epitaxial growth on 6 H− SiC (0001)
M Diani, L Kubler, L Simon, D Aubel, I Matko, B Chenevier
Physical Review B 67 (12), 125316, 2003
262003
X-ray photoelectron diffraction observation of β-SiC (001) obtained by electron cyclotron resonance plasma assisted growth on Si (001)
M Diani, JL Bischoff, L Kubler, D Bolmont
Applied surface science 68 (4), 575-582, 1993
261993
Bidimensional intercalation of Ge between SiC (0001) and a heteroepitaxial graphite top layer
L Kubler, K Aït-Mansour, M Diani, D Dentel, JL Bischoff, M Derivaz
Physical Review B 72 (11), 115319, 2005
242005
Strong element dependence of C 1s and Si 2p X-ray photoelectron diffraction profiles for identical C and Si local geometries in β-SiC
S Juillaguet, L Kubler, M Diani, JL Bischoff, G Gewinner, P Wetzel, ...
Surface science 339 (3), 363-371, 1995
211995
Selective thermal—as opposed to non-selective plasma—nitridation of Si Ge related materials examined by in situ photoemission techniques
D Aubel, M Diani, L Kubler, JL Bischoff, D Bolmont
Journal of non-crystalline solids 187, 319-323, 1995
211995
Crystal growth of 3C–SiC polytype on 6H–SiC (0 0 0 1) substrate
M Diani, L Simon, L Kubler, D Aubel, I Matko, B Chenevier, R Madar, ...
Journal of crystal growth 235 (1-4), 95-102, 2002
142002
Observation of Si out-diffusion related defects in SiC growth on Si (001)
M Diani, A Mesli, L Kubler, A Claverie, JL Balladore, D Aubel, S Peyre, ...
Materials Science and Engineering: B 29 (1-3), 110-113, 1995
141995
Synthesis of epitaxial Si1− yCy alloys on Si (001) with high level of non-usual substitutional carbon incorporation
M Diani, L Kubler, JL Bischoff, JJ Grob, B Prevot, A Mesli
Journal of crystal growth 157 (1-4), 431-435, 1995
131995
Strict thermal nitridation selectivity between Si and Ge used as a chemical probe of the outermost layer of Si1−xGex alloys and Ge/Si(001) or Si/Ge(001 …
D Aubel, M Diani, JL Bischoff, D Bolmont, L Kubler
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 1994
131994
Influence of the surface-termination of hexagonal SiC (0 0 0 1) on the temperature dependences of Ge growth modes and desorption
K Aıt-Mansour, L Kubler, D Dentel, JL Bischoff, M Diani, G Feuillet
Surface science 546 (1), 1-11, 2003
122003
Ge quantum dots on a large band gap semiconductor: the first growth stages on 4H–SiC (0 0 0 1)
K Aıt-Mansour, D Dentel, JL Bischoff, L Kubler, M Diani, A Barski, ...
Physica E: Low-dimensional Systems and Nanostructures 23 (3-4), 428-434, 2004
112004
6H-and 4H-SiC (0001) Si surface richness dosing by hydrogen etching: a way to reduce the formation temperature of reconstructions
M Diani, J Diouri, L Kubler, L Simon, D Aubel, D Bolmont
Surface Review and Letters 10 (01), 55-63, 2003
92003
A structural parallel between Ge-and Si-induced 4× 4 and 3× 3 reconstructions on SiC (0 0 0 1) drawn from comparative RHEED oscillations
K Aït-Mansour, L Kubler, M Diani, D Dentel, JL Bischoff, L Simon, ...
Surface science 565 (1), 57-69, 2004
82004
In-situ surface technique analyses and ex-situ characterization of Si1-xGex epilayers grown on Si (001)-2× 1 by molecular beam epitaxy
D Aubel, M Diani, M Stoehr, JL Bischoff, L Kubler, D Bolmont, B Fraisse, ...
Journal de Physique III 4 (4), 733-740, 1994
81994
An experimental characterization of Si (111) surfaces by Si 2p X-ray photoelectron diffraction
JL Bischoff, L Kubler, F Lutz, M Diani, D Bolmont
Solid state communications 83 (10), 823-827, 1992
81992
Tailoring the germanene–substrate interactions by means of hydrogenation
A Marjaoui, R Stephan, MC Hanf, M Diani, P Sonnet
Physical Chemistry Chemical Physics 18 (23), 15667-15672, 2016
72016
Epitaxy relationships between Ge-islands and SiC (0 0 0 1)
K Aït-Mansour, D Dentel, L Kubler, M Diani, JL Bischoff, D Bolmont
Applied surface science 241 (3-4), 403-411, 2005
72005
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